Superconductivity serves as a unique solid-state platform for electron interference at a device-relevant lengthscale, which is essential for quantum information and sensing technologies. As opposed to semiconducting transistors that are operated by voltage biasing at the nanometer scale, superconductive quantum devices cannot sustain voltage and are operated with magnetic fields, which impose a large device footprint, hindering miniaturization and scalability. Here, we introduce a system of superconducting materials and devices that have a common interface with a ferroelectric layer. An amorphous superconductor was chosen for reducing substrate-induced misfit strain and for allowing low-temperature growth. The common quantum pseudowavefunction of the superconducting electrons was controlled by the nonvolatile switchable polarization of the ferroelectric by means of voltage biasing. A controllable change of 21% in the critical temperature was demonstrated for a continuous film geometry. Moreover, a controllable change of 54% in the switching current of a superconducting quantum interference device was demonstrated. The ability to voltage bias superconducting devices together with the nonvolatile nature of this system paves the way to quantum-based memory devices.
Superconductivity serves as a unique solid-state platform for electron interference at a device-relevant lengthscale, which is essential for quantum information and sensing technologies. As opposed to semiconducting transistors that are operated by voltage biasing at the nanometer scale, superconductive quantum devices cannot sustain voltage and are operated with magnetic fields, which impose a large device footprint, hindering miniaturization and scalability. Here, we introduce a system of superconducting materials and devices that have a common interface with a ferroelectric layer. An amorphous superconductor was chosen for reducing substrate-induced misfit strain and for allowing low-temperature growth. The common quantum pseudowavefunction of the superconducting electrons was controlled by the nonvolatile switchable polarization of the ferroelectric by means of voltage biasing. A controllable change of 21% in the critical temperature was demonstrated for a continuous film geometry. Moreover, a controllable change of 54% in the switching current of a superconducting quantum interference device was demonstrated. The ability to voltage bias superconducting devices together with the nonvolatile nature of this system paves the way to quantum-based memory devices.
The recent progress in quantum computing and space exploration led to a surge in interest in cryogenic electronics. Superconducting devices such as Josephson junction, Josephson field effect transistor, cryotron, and superconducting quantum interference device (SQUID) are traditionally used to build cryogenic logic gates. However, due to the superconducting nature, gate-voltage-based control of these devices is extremely difficult. Even more challenging is to cascade the logic gates because most of these devices require current bias for their operation. Therefore, these devices are not as convenient as the semiconducting transistors to design logic gates. Here, to overcome these challenges, we propose a ferroelectric SQUID (FeSQUID) based voltage-controlled logic gates. FeSQUID exhibits two different critical current levels for two different voltage-switchable polarization states of the ferroelectric. We utilize the polarization-dependent (hence, voltage-controllable) superconducting to resistive switching of FeSQUID to design Boolean logic gates such as Copy, NOT, AND, and OR gates. The operations of these gates are verified using a Verilog-A-based compact model of FeSQUID. Finally, to demonstrate the fanning out capability of FeSQUID-based logic family, we simulate a two-input XOR gate using FeSQUID-based NOT, AND, and OR gates. Together with the ongoing progress on FeSQUID-based non-volatile memory, our designed FeSQUID-based logic family will enable all FeSQUID-based cryogenic computer, ensuring minimum mismatch between logic and memory blocks in terms of speed, power consumption, and fabrication process.
Ferroelectric Superconducting Quantum Interference Devices (Fe-SQUIDs) have recently gained attention as a transformative technology for superconducting computing, offering voltage-controlled switching that is essential for large-scale digital circuits. This unique technology has the potential to drive advancements in cryogenic computing by enabling scalable memory systems and voltage-controlled logic circuits. These innovations are critical for the realization of large-scale quantum computers and hold significant promise for high-performance computing and space exploration. In this article, we explore how Fe-SQUIDs, integrated with heater cryotrons (hTrons), can be harnessed to develop key components of computing systems. These include non-volatile memory, voltage-controlled logic circuits, in-memory matrix-vector multiplication systems, and ternary content-addressable memory. We also examine how changes in the key characteristics of Fe-SQUIDs and hTrons influence the performance of these applications, providing insights into the design and optimization of next-generation superconducting hardware.
Over the past few decades, superconducting circuits have been used to realize various novel electronic devices such as quantum bits, SQUIDs, parametric amplifiers, etc. One domain, however, where superconducting circuits fall short is information storage. Superconducting memories are based on the quantization of magnetic flux in superconducting loops. Standard implementations store information as magnetic flux quanta in a superconducting loop interrupted by two Josephson junctions (i.e., a SQUID). However, due to the large inductance required, the size of the SQUID loop cannot be scaled below several micrometers, resulting in low-density memory chips. Here, we propose a scalable memory consisting of a voltage-biased superconducting ring threaded by a half-quantum flux bias. By numerically solving the time-dependent Ginzburg-Landau equations, we show that applying a time-dependent bias voltage in the microwave range constitutes a writing mechanism to change the number of stored flux quanta within the ring. Since the proposed device does not require a large loop inductance, it can be scaled down, enabling a high-density memory technology.
The performance and coherence of superconducting quantum systems are fundamentally tied to the quality of the materials from which they are built. In superconducting transmon qubits, many loss mechanisms and sources of decoherence originate from material imperfections or unwanted oxide formation. Likewise, semiconductor–superconductor hybrid systems depend on high-quality interfaces to ensure strong coupling between electronic states in the two materials. In such hybrid devices, the accessible operating regime is often dictated by the intrinsic material properties of either the semiconductor or the superconductor. Advancing quantum device performance therefore requires exploring new material systems and optimizing their physical characteristics. In this thesis, we present the development of several superconducting material platforms for quantum technologies, including superconducting qubits, single-photon detectors, and semiconductor superconductor hybrid devices. We focus on the growth and characterization of superconducting films and heterostructures, and we establish clear connections between their material properties and the resulting device performance. First, we will present a novel semiconductor-superconductor hybrid material based on in-situ deposited epitaxial layers of Nb and Al on a shallow InAs quantum well. In this structure, the Al interlayer provides an epitaxial connection between an in-situ magnetron sputtered Nb or NbTi thin film and a shallow InAs two dimensional electron gas. This metal-to-metal epitaxy is achieved by optimization of the material stack and results in an induced superconducting gap of approximately 1 meV, determined from transport measurements of superconductor semiconductor Josephson junctions. This induced gap is approximately five times larger than the values reported for Al-based hybrid materials and indicates the formation of highly-transparent interfaces that are required in high-quality hybrid material platforms. Then, we discuss a different approach in the next chapter where we develop a hybrid material based on a molecular beam epitaxy grown InAsSb surface quantum well with an in-situ deposited Nb layer directly on top of the quantum well. Relative to conventional Al-InAs based systems, the InAsSb surface quantum well offers a lower effective mass and stronger spin-orbit interaction, while the Nb layer has a higher critical temperature and a larger critical magnetic field. The in-situ deposition of the Nb layer directly on top of the quantum well results in a high-quality interface that enables strong coupling to the InAsSb quantum well. Transport measurements on Josephson junctions reveal an induced superconducting gap of 1.3 meV and a critical current density of 3.75 × 10³A/cm². Furthermore, a planar asymmetric SQUID is realized, exhibiting gate-tunable superimposed oscillations originating from both the individual Josephson junction and the full SQUID loop. The large induced superconducting gap combined with strong spin-orbit interaction position this material as an attractive platform for experiments exploring gate-tunable superconductivity and topological superconducting devices. In the next chapter, we will focus on establishing a link between Nb film crystal properties and their performance in superconducting circuits. In this study, we investigate the microwave properties of niobium resonators with different crystalline properties and related surface topographies. We analyze a series of magnetron sputtered films in which the Nb crystal orientation and surface topography are changed by varying the substrate temperatures between room temperature and 975 K. The lowest-loss resonators that we measure have quality factors of over 10⁶ at single-photon powers, among the best ever recorded using the Nb on sapphire platform. We observe the highest quality factors in films grown at an intermediate temperature regime of the growth series (550 K) where the films display both preferential ordering of the crystal domains and low surface roughness. Furthermore, we analyze the temperature-dependent behavior of our resonators to learn about how the quasi-particle density in the Nb film is affected by the niobium crystal structure and the presence of grain boundaries. Then, we explore yet a different material platform by attempting to realize onchip NbTiN single photon detectors on LiNbO₃, an emerging photonic platform with high potential for scalable quantum information processing. We use DC reactive magnetron sputtering to grow high-quality NbTiN thin films and investigate the impact of substrate temperature during NbTiN growth. We achieve four nm thick superconducting films with a critical temperature (𝑇𝑐) of 12.3 K grown at a substrate temperature of 825 K. We demonstrate that the increased substrate temperature reduces the oxygen concentration in our films and improves the overall stoichiometry. In addition, we integrate these films with the LiNbO3 platform and investigate the obtained interface quality. Finally, we fabricate superconducting nanowire single photon detectors from the NbTiN film on LiNbO₃ and characterize the detector performance. Lastly, we report a gate-tunable Josephson diode effect in hybrid nanowire junctions consisting of a spin-orbit-coupled semiconductor core coated with epitaxial ferromagnetic insulator and superconductor shells. The wires display a hysteretic superconducting window as a function of axial magnetic field. In the superconducting regime, the devices exhibit nonreciprocal current transport, with the diode efficiency showing a strong dependence on back-gate voltage. The effect persists in a remanent magnetization state following a controlled demagnetization procedure, establishing zero-field operation. The combination of results presented in this thesis stress the importance of a material-focused approach in advancing the performance of quantum hardware. The novel hybrid material platforms developed in this thesis expand the operating regime of devices, which could enable future experiments involving gate-tunable superconductivity or topological properties. Similarly, we demonstrate that optimizing superconductor crystal structure benefits quantum devices, such as single-photon detectors and superconducting resonators.
Cryogenic (cryo) memory devices, designed to operate at/below 4 Kelvin (K) temperature, is a prime enabler of practical quantum computing systems, and superconducting (SC) electronic platforms (Figs. 1(a), (b)) [1]. The state-of-the-art quantum algorithms require many arbitrary rotations which demand a large memory to store program instructions [2]. SC qubits (used in most of the existing quantum computing systems) are highly sensitive to noise and hence, to protect the qubit states from thermal disturbances, they are placed at a few milli-Kelvin (mK) temperature. Furthermore, to preserve the integrity of the quantum states, the SC qubits undergo continuous error correction schemes, requiring extensive memory and bandwidth [2]. Superconducting electronics (SCE) (targeted towards space applications, and high-performance computing) outperforms the conventional CMOS counterparts in terms of speed and energy-efficiency (Fig. 1(c)) [3]. Decades of research efforts have given rise to three major categories (and several sub-variants) of cryo-memories based on SC, non-SC, and hybrid technologies (Fig. 2) [2], [4]–[6]. However, the existing variants suffer from one or more of the following challenges - (i) limited scalability, (ii) process complexity, (iii) bulky peripherals, (iv) array-level interference, (v) volatility, and (vi) speed incompatibility. Therefore, a scalable cryo-memory system remains elusive. To address these existing issues, here, we present a novel cryo-memory system utilizing -(i) the polarization-induced Cooper-pair [7] modulation in a ferroelectric(FE)superconducting quantum interference device (SQUID) (Fig. 3(a)) [8], and (ii) current controlledSC↔non−SCswitching in a heater cryotron(hTron)(Fig. 4) [4]. Discrete prototypes of these devices have been demonstrated recently, but their coupled interactions (which we harness in our work) were never explored before.
The nontrivial integration of qubits with classical computing systems and the lack of quantum-memory devices remain a key obstacle in the development of quantum technologies. Here, we present a theoretical platform for hybrid quantum devices with memory characteristics. In these current-driven hybrid memristors, a ferroelectric layer serves as the tunneling barrier in a superconducting Josephson junction; thus, the potential barrier is history-dependent. A memory-integrated phase qubit and a Lagrangian description of the superconducting circuit are also presented, paving the way to highly functional, self-modulated Josephson-junction technologies.