Semiconductor Optical Bistability: Towards the Optical Computer (With 28 Figures)

Brian S. Wherrett

R. Bonifacio, Luigi A. Lugiato, M. Gronchi

H. M. Nussenzveig

H. M. Gibbs, S. L. McCall, Arthur C. Gossard +3 more

Vyacheslav A. Trofimov, Vladimir A. Egorenkov, M.M. Loginova

Using computer simulation, we show a possibility of ultrafast switching between stable states of an optical bistable device based on nano-film of semiconductor. Optical bistability occurs because of nonlinear dependence of semiconductor absorption coefficient on electric field potential. Electric field is induced by a laser pulse due to charged particles generation. The main feature of this bistable element is low absorption energy, which is necessary for switching, in comparison with bistable element based on other physical mechanism of laser energy absorption. For computer simulation of a problem under consideration a new finite-difference scheme is proposed using the original iterative process.

Vyacheslav A. Trofimov, Vladimir A. Egorenkov, M.M. Loginova

Using computer simulation, we show a possibility of ultrafast switching between stable states of an optical bistable device based on nano-film of semiconductor. Optical bistability occurs because of nonlinear dependence of semiconductor absorption coefficient on electric field potential. Electric field is induced by a laser pulse due to charged particles generation. The main feature of this bistable element is low absorption energy, which is necessary for switching, in comparison with bistable element based on other physical mechanism of laser energy absorption. For computer simulation of a problem under consideration a new finite-difference scheme is proposed using the original iterative process.