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Conference on Lasers and Electro-Optics

Entangled Photon Pair Generation from an AlGaAs-on-Insulator Microring Resonator

Trevor J. Steiner, Joshua E. Castro, Lin Chang, Quynh T. Dang, Weiqiang Xie, Chenlei Li, Justin Norman, John Edward Bowers, Galan Moody

Published Jan 1, 2021• 0 citations
Publisher

Abstract

Time-energy entangled-photon pair generation is shown from a Q > 1 million AlGaAs-on-insulator microring resonator with an internal generation rate greater than 20×109 pairs sec − 1 mW − 2, heralded single photon purity > 99%, and a visibility > 97%.
DOI
10.1364/cleo_qels.2021.fth1o.4

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Entangled photon-pair sources are essential components for emerging quantum information-processing technologies. Among various platforms, on-chip microresonators offer strong potential due to their resonant enhancement and suitability for wafer-scale integration. In this study, we demonstrate ultrabright entangled photon-pair generation from high- Q silicon microring resonators. By optimizing the device geometry and coupling configuration to suppress sidewall scattering and selectively excite the fundamental mode, we achieve single-mode resonance with an intrinsic Q -factor of 1.26 × 10 6 using only standard fabrication processes available in CMOS foundries. The resulting high- Q resonator yields a record-high brightness coefficient of 3.9 × 10 9 Hz/GHz/mW 2 . At an on-chip pump power of 240 μW, we obtain a maximum brightness of 22.0 MHz/GHz and a maximum photon-pair generation rate of 9.19 MHz. At a low-pump power of 10 μW, Franson-type two-photon interference exhibits a visibility of 98.0 ± 0.2%, confirming high-quality time–energy entanglement. These results show that narrow bandwidth and high generation rate can be achieved simultaneously in CMOS-compatible silicon photonic sources, thereby advancing their use in quantum repeaters and scalable quantum networks.