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Quantum Electronics

Principle of measuring the electron population of a quantum dot using a single-photon transistor based on an array of quantum dots

Alexander V. Tsukanov

Published Jul 28, 2021• 10 citations
Publisher

Abstract

Abstract The scheme of a single-photon transistor formed by an array of semiconductor single-electron quantum dots in an optical resonator is considered. The spectral response of such a transistor depends on the Coulomb interaction of the electrons of the array with the electron at the measured quantum dot. An approximate analytical expression is obtained for the response function of a transistor with an arbitrary number of quantum dots. Using a one-dimensional array (chain) as an example, the dependences of the transistor response on the chain period, on the distance to the measured quantum dot, and on the degree of compensation for Coulomb effects are analysed. It is shown that the electron – photon dynamics of the transistor is substantially affected by the Förster effect, the suppression of which by alternating quantum dots with different symmetry of the excited state significantly increases the measurement accuracy.

DOI
10.1070/qel17573

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Abstract The scheme of a single-photon transistor formed by an array of semiconductor single-electron quantum dots in an optical resonator is considered. The spectral response of such a transistor depends on the Coulomb interaction of the electrons of the array with the electron at the measured quantum dot. An approximate analytical expression is obtained for the response function of a transistor with an arbitrary number of quantum dots. Using a one-dimensional array (chain) as an example, the dependences of the transistor response on the chain period, on the distance to the measured quantum dot, and on the degree of compensation for Coulomb effects are analysed. It is shown that the electron – photon dynamics of the transistor is substantially affected by the Förster effect, the suppression of which by alternating quantum dots with different symmetry of the excited state significantly increases the measurement accuracy.
Abstract A scheme for measuring the state of a charge qubit on a semiconductor single-electron double quantum dot (DQD) coupled to a photonic molecule (PM) consisting of three optical microresonators is proposed. The DQD that is the qubit plays the role of a nonlinear element whose electron state affects a PM response to an external laser field. Analysis of the spectroscopic response of the structure in the steady-state regime allows one to determine the state of the qubit. As an example, the spectrum of the PM formed by three GaAs microdisk resonators are calculated. The effect of various system parameters on the measuring contrast and the signal-to-noise ratio is studied. It is shown that this ratio can reach values of 15 000–20 000 for certain sets of parameters.
Abstract A theoretical model of a semiconductor nanostructure consisting of a single-mode microresonator containing two quantum dots is considered. It is shown that the Coulomb interaction between electrons localized in the quantum dots modifies a spectral response of the system to an external laser field. The possibility of its use for detecting an elementary charge in the third (optically inactive) quantum dot is discussed. The influence of both diagonal (Stark effect) and non-diagonal (Foerster effect) Coulomb matrix elements of the Hamiltonian on the detection accuracy is studied. The dependences of a measuring contrast on the parameters of the resonator and the quantum dots are calculated. The existence of such structural configurations for which the contrast retains an optimal value even at large distances to the measured dot is established.
A scheme for determining an arbitrary pure state of a charge qubit by measuring a steady-state current through a single-electron transistor is proposed. In order to increase the sensitivity of the transistor its operating part consists of three quantum dots, the energy levels of which form a symmetrical configuration. Such a choice makes it possible to realize high-precision measurements in a nonresonant steady-state regime when a maximum distance of the qubit from this structure is several hundreds of nanometers. Time-dependent populations of the structure states are obtained; a current and a measurement contrast are calculated as functions of system geometric parameters and the optimal values of these parameters are found.
Single photon emission is one of the most striking optical properties of semiconductor quantum dots (QDs), and the corresponding photon anti-bunching effect was observed by photoluminescence experiments in single QDs under non-resonant excitation [1]. In this configuration, the residual excitation of the QD environment that acts as a fluctuating reservoir for spectral diffusion [2] reduces the coherence time and prevents from the realization of single photons sources with high degree of indistinguishability. Therefore, strictly resonant excitation of the fundamental interband transition [3,4,5] is essential to reduce the dephasing processes and get high-performance single photon sources. In this paper, we report on the resonant Rayleigh scattering (RRS) of the exciton in single InAs/GaAs QDs embedded in a planar microcavity [3]. Strikingly, the most frequent case (98%) corresponds to the absence of resonance in the RRS spectrum, resulting in QDs non-coupled to light. We show that resonant fluorescence of the exciton is restored for all the QDs when an additional non-resonant laser is applied at extremely weak power ranges (few nWs). A clear photon anti-bunching under strictly resonant excitation proves that the optically gated RRS spectrum is dominated by resonant fluorescence of the exciton. A complete study will be presented such as the switching dynamics of the RRS and its power dependence with the resonant and non-resonant lasers. The phenomenon is interpreted within a simple model where the exciton resonant fluorescence is quenched by Coulomb blockade after tunneling of a hole in the QD from a structural deep level. The additional non-resonant laser suppresses Coulomb blockade by switching back the QD into a neutral state. We conclude that the optical response of the QD remains affected by its environment even in case of coherent resonant pumping. An optical control of the QD environment is essential to bring the QD from a "dark" to a "bright" state under strictly resonant excitation. References [1] P. Michler et al., Science 290, 2282 (2000) [2] A. Berthelot et al., Nature Physics 2, 759 (2006) [3] A. Muller et al., PRL 99, 187402 (2007) [4] R. Melet et al., PRB 78, 073301 (2008) [5] S. Ates et al., PRL 103, 167402 (2009)
Abstract A scheme is proposed for converting a transport photonic qubit into a stationary qubit represented by the electronic states of quantum dots (QDs). The choice of the basis states of a qubit in the form of antisymmetric combinations of the excited states of an array of QDs ensures their stability with respect to photon/phonon relaxation processes. The formation of these states is due to the Stark and Förster interactions between electrons localized in the QDs. An algorithm for the controlled transformation (recording) of a photon state into the electronic states of QDs using optical and electrostatic fields is considered. The possibility of tuning the frequency of the electronic transitions in the QDs in a gallium arsenide nanostructure using metal gates and a charged cantilever needle is studied.
Abstract A circuit of a measuring chip for determining an arbitrary pure state of a charge qubit is proposed. The strength of the current flowing through a single-electron transistor in the steady-state mode depends on the state of the qubit. To enhance the sensitivity of the transistor, its working part is built from three quantum dots (QDs) with the energy levels forming a symmetric configuration. The parameters of the system are calculated using a microscopic model of two-dimensional QDs. The time dependences of the population of the structure’s states are obtained and the current strength, sensitivity, and measuring contrast as functions of the geometric parameters of the system are determined. The effect of dissipative processes related to the acoustic phonons on the measurements is investigated and the rates of electron relaxation and dephasing in a two-level system are calculated.