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Spectral hole-burning properties of Eu-doped oxide single crystals

Isao Tanaka, N. Ishii, Ryosuke Sato, Toshio Tamaki, Hiroko Sasaki

Published Jan 1, 2000• 0 citations
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Chinese Physics Letters•Apr 1, 2007•0 citations
By using an Ar + ion laser, a tunable Rh 6 G dye laser (linewidth 0.5 cm −1 ) pumped by the second harmonic of a YAG:Nd laser and a Coherent 899-21 dye laser as light sources and using a monochromator, a phase-locking amplifier and a computer as the data detecting system, we detect the optical properties of Eu 3+ -doped Y 2 SiO 5 crystal. Persistent spectral hole burning (PSHB) are observed in the Eu 3+ ions spectral lines ( 5 D 0 − 7 F 0 transition) in the crystal at the temperature of 16 K. For 15 mW dye laser burning the crystal for 0.1 s spectral holes with hole width about 80 MHz both at 579.62 nm and at 579.82 nm are detected and the holes can remain for a long time, more than 10 h.