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Superconducting Nanowire Single-Photon Detector: Intrinsic quantum efficiency vs. thickness of NbN films

M. Hofherr, K. Ilin, M. Siegel, Alexej D. Semenov, Heinz‐Wilhelm Hübers, Николай Алексеевич Гиппиус

Published Jan 1, 2009• 0 citations
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Superconducting nanowire single photon detectors (SNSPDs) based on Si substrates have demonstrated excellent performance, such as high efficiency, low dark count rate, short reset time and low timing jitter. But due to the lattice mismatch between NbN and Si substrate, the performance of film is limited. To this end, Nb5N6layer is fabricated as the buffer layer between the NbN film and Si substrate, and that will reduce the mismatch and optimize superconducting properties of NbN films. The 6nm-thick film with a 65 nm-thick buffer layer shows the zero resistance critical temperature (Tc0) of 13.27 K, which is 5 K higher than that without buffer. Based on the NbN film on the buffered substrate, we fabricated SNSPD devices demonstrate critical current (IC) of 65 μA which is 5 ~ 6 times higher to the detectors without buffer. Besides, the experiment results prove that the buffer layer reduces the kinetic inductance, which fasten the recovery of nanowire.

IEEE International Superconductive Electronics Conference (ISEC)•Jul 1, 2019•1 citation
The quantum efficiency of superconducting nanowire single-photon detectors has been systematically studied in a broad spectral range from near ultra-violet to near infrared radiation. Detectors were made from NbN films on sapphire substrates and had thicknesses between 4 and 12 nm. The gradual reduction of the quantum efficiency with increasing wavelength is caused by a crossover from the "hot-spot" to the "vortex" detection scenario. For thicker films the wavelength demarcating the two regimes shifts to shorter wavelengths.
Superconducting nanowires used in single-photon detectors have been realized on amorphous or poly-crystalline films. Here, we report the first use of single-crystalline NbN thin films for superconducting nanowire single-photon detectors (SNSPDs). Grown by molecular beam epitaxy (MBE) at high temperature on nearly lattice-matched AlN-on-sapphire substrates, the NbN films exhibit a high degree of uniformity and homogeneity. Even with relatively thick films, the fabricated nanowire detectors show saturated internal efficiency at near-IR wavelengths, demonstrating the potential of MBE-grown NbN for realizing large arrays of on-chip SNSPDs and their integration with AlN-based χ(2) quantum photonic circuits.
Superconducting nanowire single photon detectors (SNSPDs) based on Si substrates have demonstrated excellent performance, such as high efficiency, low dark count rate, short reset time and low timing jitter. But due to the lattice mismatch between NbN and Si substrate, the performance of film is limited. To this end, Nb5N6layer is fabricated as the buffer layer between the NbN film and Si substrate, and that will reduce the mismatch and optimize superconducting properties of NbN films. The 6nm-thick film with a 65 nm-thick buffer layer shows the zero resistance critical temperature (Tc0) of 13.27 K, which is 5 K higher than that without buffer. Based on the NbN film on the buffered substrate, we fabricated SNSPD devices demonstrate critical current (IC) of 65 μA which is 5 ~ 6 times higher to the detectors without buffer. Besides, the experiment results prove that the buffer layer reduces the kinetic inductance, which fasten the recovery of nanowire.