We propose a series of dissipation-assisted entanglement generation protocols that can be implemented on a trapped-ion quantum simulator. Our approach builds on the single-site molecular electron transfer (ET) model recently realized in the experiment [So et al. Sci. Adv. 10, eads8011 (2024)]. This model leverages spin-dependent boson displacement and dissipation controlled by sympathetic cooling. We show that, when coupled to external degrees of freedom, the ET model can be used as a dissipative quantum control mechanism, enabling the precise tailoring of both spin and phonon steady state of a target sub-system. We derive simplified analytical formalisms that offer intuitive insights into the dissipative dynamics. Using realistic interactions in a trapped-ion system, we develop a protocol for generating
N-qubit and
N-boson
W states. Additionally, we generalize this protocol to realize generic
N-qubit Dicke states with tunable excitation numbers. Finally, we outline a realistic experimental setup to implement our schemes in the presence of noise sources.
We present protocols for dissipative entanglement of three trapped-ion qubits and discuss a scheme that uses sympathetic cooling as the dissipation mechanism. This scheme relies on tailored destructive interference to generate any one of six entangled W states in a three-ion qubit space. Using a beryllium–magnesium ion crystal as an example system, we theoretically investigate the protocol's performance and the effects of likely error sources, including thermal secular motion of the ion crystal, calibration imperfections, and spontaneous photon scattering. We estimate that a fidelity of ~98% may be achieved in typical trapped ion experiments with ~1 ms interaction time. These protocols avoid timescale hierarchies for faster preparation of entangled states.