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The Japan Society of Applied Physics

Improvement of nitrogen-enriched implantation for creation of multi-qubits composed of NV centers

Kosuke Kimura, Shinobu Onoda, K. Yamada, Wataru Kada, Hiroshi Kawarada, Hideyuki Watanabe, Junichi Isoya, Osamu Hanaizumi, Takeshi Ohshima

Published Jul 9, 2020• 0 citations
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A nitrogen vacancy (NV) center in diamond is known as a solid-state spin quantum bit (qubit) at room temperature. The fabrication of scalable quantum registers based on NV centers is a long-standing issue. In 2005, spin-spin interaction between NV-N pairs, which were fabricated by N2 ion implantation, was reported. An entanglement between two electron-spin qubits becomes an excellent quantum information processing component, as accomplished by an NV-NV pair with a nanometer-scale distance in 2010 and 2013. More recently,strongly dipolar coupled NV-NV pairs were realized by 14N 30 keV implantationvia nanoholes in PMMA resist mask. The creation yields of NV-NV pairs dramatically improved, and the nanohole implantation had been thought to be the most promising technique to integrate NV centers. However, the problem of the technique is the finite size of nanoholes. The distribution of nitrogen atoms is determined by both ion straggling and nanohole diameter. The scaling of NV centers is stagnant up to two for several years. To overcome the barrier of triple NV centers, our previous research gave a ground-breaking idea of a highly populated NV center complex by introducing a molecular ion implantation technique in 2019. Since the molecular ion is regarded as an idea point source, the distribution of nitrogen atoms is determined by only ion straggling. Therefore, our proposed method is more effective than other implantation techniques including nanohole implantation. Instead of a pure nitrogen cluster which is commonly unstable, the stable organic molecular ions (adenine; C5N5H5) were utilized as the ion source. We successfully implanted C5N4Hn ions into single crystalline diamonds. Three NV centers were integrated, and the dipolar interactions among them were successfully observed. In 2022, we succeeded in creating more than 5 NV centers by phthalocyanine (C32H18N8) ion implantation. The next challenge is the implantation of isotopically enriched molecular ions. The isotopically enriched ion contains 13C and 15N. The implantation of isotopically enriched molecular ions is able to create 15NV-13C hybrid quantum registers. In this presentation, we will show the development of the isotopically enriched molecular ion beam and the characterization of created NV centers by laboratory-built confocal microscopy (CFM) and optically detected magnetic resonance (ODMR).
A nitrogen vacancy (NV) center in diamond is known as a qubit with excellent magneto-optical properties at room temperature. Not only is NV center used for Quantum Information Processing (QIP), it is utilized for quantum sensing. The integrated NV centers in nanometer range have the potential of further improvement of sensitivity, etc. Ion implantation into diamond is known as one of the most popular methods for creating multiple qubits. In 2019, we have reported that the creation of three qubits was realized by implantation of the organic molecular (C5N4Hn) ion containing four nitrogen atoms1). In this study, we successfully developed Phthalocyanine (C32N8H18) ion beam for further integration of NV centers. After implantation and annealing, we succeeded to observe the fluorescence spots from NV centers. Fig. 1. shows schematic diagram of 284 keV-C32N8H18 ion implantation into diamond. Red, black, blue, and gray circles indicate nitrogen, carbon, hydrogen, and vacancy, respectively. Dashed circles indicate the NV centers. The average distance between nitrogen atoms is calculated to be 9±4 nm by SRIM (Stopping and Range In Matter) code. After annealing at 1000 oC for 2 hours in vacuum, the fluorescent image is observed by using home-build confocal laser scanning fluorescent microcopy.
Nitrogen-vacancy (NV) centers in diamond with coherent optical transitions are a promising candidate for quantum science and technology protocols. A widely used strategy for their creation is nitrogen-ion implantation and high-temperature annealing. The data presented in this work show that while low-strain, narrow-optical-linewidth NV centers are formed from naturally occurring 14{}^{14}14N atoms, NV centers formed from the implanted 15{}^{15}15N atoms show broadened optical transitions and experience higher strain. These results have immediate implications for the positioning accuracy of current NV center creation protocols.