Creation of NV centers by Phthalocyanine implantation into diamond

Shinobu Onoda, Kosuke Kimura, K. Yamada, Wataru Kada, Junichi Isoya, Tokuyuki Teraji, Hideyuki Watanabe, Kyotaro Kanehisa, Hiroshi Kawarada, Osamu Hanaizumi, Takeshi Ohshima, Onoda Shinobu, Kimura Kosuke, Yamada Keisuke, Ohshima Takeshi

Published Nov 4, 2020• 0 citations

OpenAlex

Abstract

A nitrogen vacancy (NV) center in diamond is known as a qubit with excellent magneto-optical properties at room temperature. Not only is NV center used for Quantum Information Processing (QIP), it is utilized for quantum sensing. The integrated NV centers in nanometer range have the potential of further improvement of sensitivity, etc. Ion implantation into diamond is known as one of the most popular methods for creating multiple qubits. In 2019, we have reported that the creation of three qubits was realized by implantation of the organic molecular (C5N4Hn) ion containing four nitrogen atoms1). In this study, we successfully developed Phthalocyanine (C32N8H18) ion beam for further integration of NV centers. After implantation and annealing, we succeeded to observe the fluorescence spots from NV centers. Fig. 1. shows schematic diagram of 284 keV-C32N8H18 ion implantation into diamond. Red, black, blue, and gray circles indicate nitrogen, carbon, hydrogen, and vacancy, respectively. Dashed circles indicate the NV centers. The average distance between nitrogen atoms is calculated to be 9±4 nm by SRIM (Stopping and Range In Matter) code. After annealing at 1000 oC for 2 hours in vacuum, the fluorescent image is observed by using home-build confocal laser scanning fluorescent microcopy.

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