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IEEE Lasers and Electro-Optics Society Annual Meeting (LEOS)

LiNbO 3 結晶中の電子Kerr効果による自己集束

Fangwang Zhou, Li H, Ji W

Published Jan 1, 1996• 0 citations
OpenAlex

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A rare-earth-ion-doped waveguide based on a standard photonics technology for quantum signal processing

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We measure properties of the 795 nm $^3$H$_6$ to $^3$H$_4$ transition of a rare-earth-ion-doped waveguide, Tm$^{3+}$:Ti$^{4+}$:LiNbO$_{3}$, at temperatures as low as 800 mK. Coherence and hyperfine population lifetimes up to 117 $\mu$s and 2.5 hours, respectively, are observed. They are at least one order of magnitude greater than those measured at 3 K, and match those observed in a bulk Tm$^{3+}$:LiNbO$_{3}$ crystal under similar conditions. Furthermore, taking advantage of these properties, we prepare a 0.5 GHz-bandwidth atomic frequency comb quantum memory of finesse $>$2 on a vanishing background. Finally, we measure high Rabi frequencies and calculate a transition dipole moment of $\sim$10$^{-32}$ C$\cdot$m, which is equivalent to that of Tm$^{3+}$:LiNbO$_{3}$. Our results show the suitability of rare-earth-doped waveguides created using industry-standard Ti-indiffusion in LiNbO$_3$ for on-chip quantum applications.

•May 9, 2016•1 citation
We measure properties of the 795 nm 3^33H6_66​ to 3^33H4_44​ transition of a rare-earth-ion-doped waveguide, Tm3+^{3+}3+:Ti4+^{4+}4+:LiNbO3_{3}3​, at temperatures as low as 800 mK. Coherence and hyperfine population lifetimes up to 117 μ\muμs and 2.5 hours, respectively, are observed. They are at least one order of magnitude greater than those measured at 3 K, and match those observed in a bulk Tm3+^{3+}3+:LiNbO3_{3}3​ crystal under similar conditions. Furthermore, taking advantage of these properties, we prepare a 0.5 GHz-bandwidth atomic frequency comb quantum memory of finesse $>$2 on a vanishing background. Finally, we measure high Rabi frequencies and calculate a transition dipole moment of $\sim101010^{-32}$ C⋅\cdot⋅m, which is equivalent to that of Tm3+^{3+}3+:LiNbO3_{3}3​. Our results show the suitability of rare-earth-doped waveguides created using industry-standard Ti-indiffusion in LiNbO3_33​ for on-chip quantum applications.