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Optical Technique

Theoretical analysis of gain of Er 3+ doped LiNbO 3 waveguide amplifier

Chen Shu

Published Jan 1, 1999• 0 citations
OpenAlex

Abstract

The characterizes of gain of Er 3+ :LiNbO 3 waveguide amplifier are studied. LiNbO 3 passive waveguide devices are small signal pump light establish on a modeling of quasi two level system built specially for pump wavelength at 980nm and neglecting ESA and ASE. The numerical simulation is done for single and double pass configuration respectively.

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Fiber & Integrated Optics•Mar 20, 2009•0 citations
The characterizes of gain of Er 3+ :LiNbO 3 waveguide amplifier are studied. LiNbO 3 passive waveguide devices are small signal pump light establish on a modeling of quasi two level system built specially for pump wavelength at 980nm and neglecting ESA and ASE. The numerical simulation is done for single and double pass configuration respectively.
In this paper it is presented a theoretical evaluation of the following important amplifier parameters: the output mean photon number, the standard deviation, the Fano factor, the statistical fluctuation and the spontaneous emission factor for single and double pass configuration, and for forward and backward pumping schemes in quasi two level optical waveguide amplifiers. The theoretical model used to evaluate the noise characterization of an Er3+-doped Ti:LiNbO3 waveguide amplifiers is based on the photon statistics master equation of the linear amplifier, closely related with EDFA model and has been modified to account for the effects of the host material. One considered a quasi two level system model and one neglected ESA due to the considered pumping wavelength. The interaction of the pump and signal photons with Er3+ ions in LiNbO3 can be described using the rate equations. The simulations were performed using the small gain approximation in Er3+:Ti:LiNbO3 optical waveguides. The pump was supposed in the 1480 nm range and the signal having (lambda) equals 1530 nm. The evaluation of the above mentioned parameters vs. wavelength, pump powers, etc. were also performed and commented.
In this paper we report the derivation and evaluation of the spectral optical gain, spectral noise figure, amplified spontaneous emission photon number and signal-to-noise ratio in single- and double-pass configurations for an Er3+-doped LiNbO3 waveguide amplifier pumped near 1484nm. The theoretical analysis was made using the small-gain approximation in the unsaturated regime. The simulations show the evolution of the above-mentioned parameters under various pumping regimes and waveguide lengths. The results obtained show how the model can be used for the design of Er3+-doped LiNbO3 waveguide amplifiers.
In the small gain approximation and the unsaturated regime in this paper we report some original results concerning the evaluation of the Fano factor, statistical fluctuation and spontaneous emission factor which characterize the photon statistics on the number of excited modes, dopant concentration and power pumping in the single and double pass Er3+ - doped LiNbO, straight waveguide amplifiers pumped near 1484 nm using erfc, Gaussian and constant profile of the Er3+ ions in LiNbO, crystal. We demonstrated that for 50 mW input pump power the Poisson photon statistics are maintained in the above mentioned amplifiers for concentrations of the Er ions smaller than l026 m-3 and also high gains and low noise figures are achievable. The obtained results can be used for the design of optoelectronic integrated circuits.
In this article, we report a theoretical study concerning some statistical parameters which characterize the single- and double-pass Er3+-doped Ti:LiNbO3 M-mode straight waveguides. For the derivation and the evaluation of the Fano factor, the statistical fluctuation and the spontaneous emission factor we used a quasi two-level model in the small gain approximation and the unsaturated regime. The simulation results show the evolution of these parameters under various pump regimes and waveguide lengths. The obtained results can be used for the design of complex rare earth-doped integrated circuits.