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Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE

Theoretical analysis of photon statistics on excited number of modes and dopant concentration in Er 3+ :Ti:LiNbO, waveguide amplifiers

Adrian N. Ducariu, G. C. Constantin, Niculae N. Puşcaş

Published Aug 15, 2005• 0 citations
Publisher

Abstract

In the small gain approximation and the unsaturated regime in this paper we report some original results concerning the evaluation of the Fano factor, statistical fluctuation and spontaneous emission factor which characterize the photon statistics on the number of excited modes, dopant concentration and power pumping in the single and double pass Er3+ - doped LiNbO, straight waveguide amplifiers pumped near 1484 nm using erfc, Gaussian and constant profile of the Er3+ ions in LiNbO, crystal. We demonstrated that for 50 mW input pump power the Poisson photon statistics are maintained in the above mentioned amplifiers for concentrations of the Er ions smaller than l026 m-3 and also high gains and low noise figures are achievable. The obtained results can be used for the design of optoelectronic integrated circuits.

DOI
10.1117/12.639775

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In this paper we report the derivation and evaluation of the spectral optical gain, spectral noise figure, amplified spontaneous emission photon number and signal-to-noise ratio in single- and double-pass configurations for an Er3+-doped LiNbO3 waveguide amplifier pumped near 1484nm. The theoretical analysis was made using the small-gain approximation in the unsaturated regime. The simulations show the evolution of the above-mentioned parameters under various pumping regimes and waveguide lengths. The results obtained show how the model can be used for the design of Er3+-doped LiNbO3 waveguide amplifiers.
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