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Physics Letters A

Temporal and spectral hybrid interference from phase transition of Eu3+/Pr3+: YPO4 and evolution of amplifier and multiplexer

Sifan Li, Habib Ullah, Yisha Qin, Zhili Chen, Jinyang Li, Yuan Zhao, Yanpeng Zhang

Published Apr 30, 2021• 2 citations
Publisher
DOI
10.1016/j.physleta.2021.127400

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Abstract We study the Fano interference from different phase transitions of Eu3+:YPO4 and Pr3+:YPO4 crystals through simultaneous detection of bright and dark states. For this study, we employed tetragonal (T), hexahedral (H), and (H + T)-phases of YPO4 crystals. The Fano interfering bright and dark states are classified based on dressed spontaneous parametric four-wave mixing, dressed multi-order fluorescence, and hybrid signal regimes. Further, the Fano interference between conti-nuous and discrete states can be controlled from partly-(constructive–destructive)-interference through a phase transition, nonlinear phase, and dressing. The (H + T)-phase Pr3+:YPO4 suggests more obvious Fano interference in contrast to T- or H-phase Pr3+:YPO4. We report that the Pr3+:YPO4 and Eu3+:YPO4 demonstrates the dressed multi-level- and dressed single-level Fano interference, respectively, with further three types of Fano interference that can be distinguished at different time delays. The experimental measurement agrees with theoretical simulations. Such results may be used for the design of new types of quantum electronic or spintronic devices such as Fano-transistors.

New Journal of Physics•Jul 30, 2020•27 citations
Abstract We study the Fano interference from different phase transitions of Eu3+:YPO4 and Pr3+:YPO4 crystals through simultaneous detection of bright and dark states. For this study, we employed tetragonal (T), hexahedral (H), and (H + T)-phases of YPO4 crystals. The Fano interfering bright and dark states are classified based on dressed spontaneous parametric four-wave mixing, dressed multi-order fluorescence, and hybrid signal regimes. Further, the Fano interference between conti-nuous and discrete states can be controlled from partly-(constructive–destructive)-interference through a phase transition, nonlinear phase, and dressing. The (H + T)-phase Pr3+:YPO4 suggests more obvious Fano interference in contrast to T- or H-phase Pr3+:YPO4. We report that the Pr3+:YPO4 and Eu3+:YPO4 demonstrates the dressed multi-level- and dressed single-level Fano interference, respectively, with further three types of Fano interference that can be distinguished at different time delays. The experimental measurement agrees with theoretical simulations. Such results may be used for the design of new types of quantum electronic or spintronic devices such as Fano-transistors.