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New Journal of Physics

Three-type Fano interference controlled by the phase transition of Eu3+/Pr3+:YPO4

Huanrong Fan, Faizan Raza, Irfan Ahmed, Kangkang Li, Habib Ullah, Yanpeng Zhang

Published Jul 30, 2020• 27 citations
Publisher

Abstract

Abstract We study the Fano interference from different phase transitions of Eu3+:YPO4 and Pr3+:YPO4 crystals through simultaneous detection of bright and dark states. For this study, we employed tetragonal (T), hexahedral (H), and (H + T)-phases of YPO4 crystals. The Fano interfering bright and dark states are classified based on dressed spontaneous parametric four-wave mixing, dressed multi-order fluorescence, and hybrid signal regimes. Further, the Fano interference between conti-nuous and discrete states can be controlled from partly-(constructive–destructive)-interference through a phase transition, nonlinear phase, and dressing. The (H + T)-phase Pr3+:YPO4 suggests more obvious Fano interference in contrast to T- or H-phase Pr3+:YPO4. We report that the Pr3+:YPO4 and Eu3+:YPO4 demonstrates the dressed multi-level- and dressed single-level Fano interference, respectively, with further three types of Fano interference that can be distinguished at different time delays. The experimental measurement agrees with theoretical simulations. Such results may be used for the design of new types of quantum electronic or spintronic devices such as Fano-transistors.

DOI
10.1088/1367-2630/abaacc

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We report the multi-Fano interference obtained through the simultaneous acquisition of bright and dark states in different phase transitions of Eu3+: BiPO4 (7:1, 6:1, 1:1, and 0.5:1) and Eu3+: NaYF4 (1:1/4) crystals. We employ multi-dressed spontaneous four-wave mixing and multi-dressed fluorescence (multi-order) to optimize the strong photon-phonon nested dressing effect resulting in more obvious multi-Fano interference. Firstly, the multi-Fano is produced through interference in continuous and multi-bound states. Secondly, five multi-Fano dips originate from nested five dressings (one photon and four phonons) under symmetrical splitting of 7F1 energy level. We depict that the pure H-phase (0.5:1) sample exhibits the strongest photon-phonon dressed effect (five Fano dips). Further, we investigate high-order non-Hermitian exceptional points in multi-Fano interference by adjusting the ratio of Rabi-frequency to de-phase rate through nested photon and phonon dressing. Our experimental results are validated by theoretical simulations, which may be applied to designing optoelectronic devices such as non-Hermitian multi-Fano interferences (multi-channel) router.
We report the symmetry-dependent intensity–noise correlation and the intensity-difference squeezing of spontaneous parametric four-wave mixing (SP-FWM) and fluorescence (FL) hybrid signals from the different phases [hexagonal (H) + tetragonal (T), T + H] of Pr3+: YPO4 and Eu3+: YPO4 crystals. The competition between FL and SP-FWM in hybrid signals determines the amplitude and hybrid line shape of the two-mode and three-mode correlation. The correlation amplitude switches from positive to negative due to strong double dressing caused by a high transition probability and a dipole moment of the (more H + less T)-phase of Pr3+: YPO4. This switching phenomenon is used to realize a metal–oxide semiconductor field-effect transistor-based logic inverter. Furthermore, the line shape of correlation changes from broad to sharp due to weak dressing, transition probability, and a low dipole moment of the (more T + less H)-phase of Pr3+: YPO4. Based on these results, we proposed the model of a tunable correlation filter. Gate position, frequency detuning, and laser power control the amplitude and hybrid line shape. Our experimental results provide an advanced technique of bandwidth contrast of about 0.9%. Such notch filters have potential applications in quantum communications.
We compare the atomic coherence time of doped ion crystals, i.e., BiPO4: Eu3+, YPO4: Eu3+, YPO4: Pr3+, and Y2SiO5: Pr3 + crystals. Such atomic coherence time is controlled by crystal field splitting (CF-splitting) and optical (photon and phonon) dressing. Compared with the other doped ion crystals, BiPO4: Eu3+ exhibits the longest coherence time. By controlling thermal phonon, phase-transition phonon, broadband or narrowband excitation, and fluorescence (FL) or spontaneous four-wave-mixing ratio (S-FWM), a superior atomic coherence time of up to 10 ± 0.6 ms is achieved in the pure hexagonal (0.5:1) phase of BiPO4: Eu3+. Furthermore, the relationship between TAT-splitting and spectral Autler–Townes (SAT)-splitting was investigated. This superior atomic coherence time has potential applications in quantum memory devices.
Abstract Laser interaction with doped crystals exhibiting photon–photon and photon–phonon coupling has been focused on recently. In pretext, here we report the spectral and temporal profile interaction of two lasers excitation through various phases of Eu3+: BiPO4 crystals. We reveal that spectral-temporal profile interaction of hybrid signals (coexisting fluorescence and spontaneous four-wave mixing) are dressed by nested and cascade processes of two-photons (two-phonon). Such interaction comes from thermal phonon constructive and phase transition phonon destructive dressing. The spectral and temporal (profile) interactions are interrelated and reduced by about 2-times due to two-photon nested dressing in contrast to the interaction through the sum of each laser excitation. In contrast to a single laser, spectral (Fano)-dip interaction reduces by 2-times due to two-photon destructive dressing coupling. Moreover, thermal phonon dressing at 300 K exhibits 3-times more extensive temporal interaction than that at 77 K. The phase transition phonon dressing for a half hexagonal and half low-temperature monoclinic phase is about 1.5-times longer than that of the pure hexagonal phase of Eu3+: BiPO4. These results may help to understand the spectral-temporal relationship in the fields of nonlinear and quantum optics.
crystal. Such atomic coherence spectral interaction evolves from out-of-phase fluorescence to in-phase spontaneous four-wave mixing (SFWM) by changing the time gate. The dressing dip switch and three dressing dips of SFWM result from the strong photon-phonon destructive cross- and self-interaction for the hexagonal phase, respectively. More phonon dressing results in the destructive interaction, while less phonon dressing results in the constructive interaction of the atomic coherences. The experimental measurements of the photon-phonon interaction agree with the theoretical simulations. Based on our results, we proposed a model for an optical transistor (as an amplifier and switch).