Bulletin of the American Physical Society

Pseudogap universality in the doping-driven metal to Mott-insulator transition

P.-O. Downey, N. Kowalski, G. Sordi, Olivier Gingras, Charles-David Hébert, M. Charlebois, A.–M. S. Tremblay

Published Mar 17, 2021• 0 citations

Related papers

Critical behaviour near the metal-insulator transition of a doped Mott insulator

Yūichi Ono, R. Bulla, Alex C. Hewson +1 more

Low energy states and the nature of the pseudogap in doped Mott insulators

Tiago C. Ribeiro

Short-Range Spin Correlation Induced Pseudogap in Doped Mott Insulators

Bumsoo Kyung, S. S. Kancharla, David Sénéchal +3 more

Appearance of Universal Metallic Dispersion in a Doped Mott Insulator

Hsin Lin, S. Sahrakorpi, R.S. Markiewicz +16 more

Appearance of Universal Metallic Dispersion in a Doped Mott Insulator

T. Sasagawa

A Numerical Study of a Disorder-driven 2D Mott Insulator-to-Metal Quantum Phase Transition

Jared O’Neal, Zhenyu Wang, Yoshinori Okada +2 more