Challenges
Datasets
Workspaces
Papers
Discussions
Leaderboard
Log inSign up
Challenges
Datasets
Workspaces
Papers
Discussions
Leaderboard
Blog
Job Board
Q3AS

© 2026 Aqora Quantum S.A.S.

TermsPrivacyLegal Notice

理论物理通讯:英文版

Transition Probabilities Among Fock States of an Ion in Harmonic Trap due to Alternating Electric Field

Wu ., Ying, Yang Yang, Xiao-Xue

Published Jan 1, 2002• 0 citations
OpenAlex

Abstract

In this paper, we derive the exact analytical expressions of the transition probabilities among the Fock states of an ion in a harmonic trap due to the presence of an alternating electric field.

Related papers

Transition Probabilities Among Fock States of an Ion in Harmonic Trap due to Alternating Electric Field

Ying Wu, Xiaoxue Yang

In this paper, we derive the exact analytical expressions of the transition probabilities among the Fock states of an ion in a harmonic trap due to the presence of an alternating electric field.

Communications in Theoretical Physics•Jul 15, 2002•1 citation

Transitions probabilities in the multilevel quantum system at the third order of perturbation theory

Alexander Alexandrovich Biryukov, B. V. Danilyuk

The transitions between stationary states in multilevel quantum system under the influence of an alternating external electric field are considered in this work. Herewith the strength of external electric field changes with time by the harmonic law. The analytical expressions for quantum transitions probabilities of a system are given at the third order of perturbation theory. The dependencies of quantum transitions probabilities and average energy of a system upon interaction time and frequency of field are investigated in the case when the system is a charged particle in rectangular infinitely deep potential pit.

Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE•Mar 3, 2008•0 citations

Electric field dependence of trapping in one dimension

Bijan Movaghar, B. Pohlmann, Diethelm Würtz

We have derived an exact analytic solution for the electric field and time dependence of the survival fraction in the one-dimensional trapping problem. The intermediate- and long-time behavior is discussed below and above a threshold region of the electric field strength. The mean decay rate is given as a function of trap concentration and electric field strength.

Physical Review A•Mar 1, 1984•44 citations

Analytic Description of the Motion of a Trapped Ion in an Even or Odd Coherent State

Michael Martin Nieto

A completely analytic description is given of the motion of a trapped ion which is in either an even or an odd coherent state. Comparison to recent theoretical and experimental work is made.

arXiv:atom-ph/9605010•May 24, 1996•0 citations

Exact Quantum Logic Gates with a Single Trapped Cold Ion

Lian-Fu Wei, Liu Shi-Yong, Lei Xiaolin

We present an alternative scheme to exactly implement one-qubit and two-qubit quantum gates with a single trapped cold ion driven by a travelling laser field. The internal degree of freedom of the ion acts as the target qubit and the control qubit is encoded by two Fock states of the external vibration of the ion. The conditions to realize these operations, including the duration of each applied laser pulse and Lamb-Dicke parameter, are derived. In our scheme neither the auxiliary atomic level nor the Lamb-Dicke approximation is required. The multiquantum transition between the internal and external degrees of freedom of the ion is considered.

Chinese Physics Letters•Oct 10, 2001•6 citations

Calculation of the probability of quantum transitions in the system by the method of functional integration

Alexander Alexandrovich Biryukov, I. V. Matveev, Марк Александрович Шлеенков

The probabilities of quantum transitions are described by integrals over trajectories in the space of energy states of a system exposed to an electromagnetic field. We describe quantum transitions in hydrogen atom.

EPJ Web of Conferences•Jan 1, 2019•0 citations
The transitions between stationary states in multilevel quantum system under the influence of an alternating external electric field are considered in this work. Herewith the strength of external electric field changes with time by the harmonic law. The analytical expressions for quantum transitions probabilities of a system are given at the third order of perturbation theory. The dependencies of quantum transitions probabilities and average energy of a system upon interaction time and frequency of field are investigated in the case when the system is a charged particle in rectangular infinitely deep potential pit.
We present an alternative scheme to exactly implement one-qubit and two-qubit quantum gates with a single trapped cold ion driven by a travelling laser field. The internal degree of freedom of the ion acts as the target qubit and the control qubit is encoded by two Fock states of the external vibration of the ion. The conditions to realize these operations, including the duration of each applied laser pulse and Lamb-Dicke parameter, are derived. In our scheme neither the auxiliary atomic level nor the Lamb-Dicke approximation is required. The multiquantum transition between the internal and external degrees of freedom of the ion is considered.