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IEE Proceedings I Communications, Speech and Vision [see also IEE Proceedings-Communications]

Optical bistable-switching operation in semiconductor lasers with inhomogeneous excitation

Kawaguchi

Published Jan 1, 1982• 0 citations
Publisher
DOI
10.1049/ip-i-1:19820031

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Static and dynamic properties of dispersive optical bistability (OB) in semiconductor lasers biased from below to above threshold has been investigated both theoretically and experimentally. The OB result is found to be varied continuously from below to above threshold. Although conventionally the OB switch-off time in dispersive semiconductor laser amplifiers is limited by the effective carrier lifetime, a much faster OB switch-off can be obtained when a laser diode operates well above threshold in the injection-locked condition.>