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Optical Bistability in Semiconductor Laser Amplifiers:- Assessment of Switching Speed

H.J. Westlake, M.J. Adams, M.J. O’Mahony

International Conference on Solid State Devices and Materials (SSDM)Aug 21, 19862 citations

Switching powers for optical bistability in a semiconductor laser above and below threshold

Paradorn Pakdeevanich, M.J. Adams

Optics CommunicationsMar 1, 200011 citations

Optical bistable-switching operation in semiconductor lasers with inhomogeneous excitation

Kawaguchi

IEE Proceedings I Communications, Speech and Vision [see also IEE Proceedings-Communications]Jan 1, 19820 citations

Static and dynamical properties of dispersive optical bistability in semiconductor lasers

Rongqing Hui

Static and dynamic properties of dispersive optical bistability (OB) in semiconductor lasers biased from below to above threshold has been investigated both theoretically and experimentally. The OB result is found to be varied continuously from below to above threshold. Although conventionally the OB switch-off time in dispersive semiconductor laser amplifiers is limited by the effective carrier lifetime, a much faster OB switch-off can be obtained when a laser diode operates well above threshold in the injection-locked condition.>Static and dynamic properties of dispersive optical bistability (OB) in semiconductor lasers biased from below to above threshold has been investigated both theoretically and experimentally. The OB result is found to be varied continuously from below to above threshold. Although conventionally the OB switch-off time in dispersive semiconductor laser amplifiers is limited by the effective carrier lifetime, a much faster OB switch-off can be obtained when a laser diode operates well above threshold in the injection-locked condition.>

Journal of Lightwave TechnologyJan 1, 199521 citations

SPECIAL ISSUE - OPTICAL BISTABILITY IN SEMICONDUCTOR-LASERS

J.E. Carroll, Ian H. White

Jul 1, 19871 citation

Optical bistability in diode-laser amplifiers and injection-locked laser diodes

Rongqing Hui, Sergio Benedetto, Ivo Montrosset

Static and dynamic properties of dispersive optical bistability (OB) in semiconductor lasers biased from below to above threshold have been investigated theoretically. The OB result is found to be varied continuously from below to above threshold with its maximum value located just above threshold; this result has been verified experimentally. A much faster switch-off of OB can be expected when the laser operates in the injection-locked condition.

Optics LettersFeb 15, 199318 citations

Optical Bistability and Optical Switching in Semiconductor Lasers with Varying Bias Current

Abstract

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Optical Bistability and Optical Switching in Semiconductor Lasers with Varying Bias Current

Abstract

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