Challenges
Datasets
Workspaces
Papers
Discussions
Leaderboard
Log inSign up
Challenges
Datasets
Workspaces
Papers
Discussions
Leaderboard
Blog
Job Board
Q3AS

© 2026 Aqora Quantum S.A.S.

TermsPrivacyLegal Notice

Bulletin of the American Physical Society

Extreme laser background suppression for resonance fluorescence in semiconductor nanostructures

Meryem Benelajla, Elena Kammann, K. Karraï

Published Mar 4, 2020• 0 citations
OpenAlex

Related papers

Modeling of the Extreme Nonlinear Optical Response of Semiconductor Nanostructures

D. Golde, T. Meier, S. W. Koch

Springer series in chemical physics•Jan 1, 2007•0 citations

Coherent spectroscopy of semiconductor nanostructures

Vadim G. Lyssenko, John Erland Østergaard

Springer eBooks•Jan 1, 2006•0 citations

Extreme laser background suppression for resonant fluorescence of a quantum emitter

Meryem Benelajla, Elena Kammann, S. H. E. Müller +3 more

We show that confocal microscopy arrangement in conjunction with metallic mirrors or beam splitters enhance the cross-polarization extinction by several orders of magnitude, with a view to facilitating the detection of the resonant fluorescence emission.

OSA Advanced Photonics Congress•Jan 1, 2020•0 citations

Homogeneous linewidth of quantum well excitonsfrom resonance fluorescence spectra

Daniel Schwedt, Ch. Nacke, H. Stolz +3 more

Abstract Editor's Choice of this issue is the article by D. Schwedt et al. [1] on high resolution measurements of resonance fluorescence spectra from GaAs quantum wells. In the cover picture, the authors point out the connection between the experimental data and the model of disordered excitons. The lower left part shows a series of polarized photoluminescence spectra, fitted with very good agreement by a model of statistically distributed three‐level‐systems. The upper right part images the excitation mechanism. Only those excitons of an inhomogeneous distribution (indicated by the blue line) contribute to the resonance fluorescence (red line) which overlap spectrally with the monochromatic laser. It could be verified experimentally that the resonance fluorescence exhibits two parts: delta‐like Rayleigh scattering and Lorentzian luminescence. Daniel Schwedt is working in the DFG research group 'Quantum Optics in Semiconductor Nanostructures' and concentrates on quantum optical experiments on III–V semiconductor quantum well structures.

physica status solidi (b)•Oct 22, 2003•1 citation

Control of resonance fluorescence of a four-level quantum emitter near a plasmonic nanostructure

F. Carreño, M. A. Antón, Vassilios Yannopapas +1 more

We present a theoretical study of the resonance fluorescence of a four-level double-$\mathsf{V}$-type quantum emitter near a plasmonic nanostructure. The quantum system interacts with two orthogonal circularly polarized laser fields with the same frequency and intensity, but with different phases. For the plasmonic nanostructure we consider a two-dimensional array of metal-coated dielectric nanospheres. We show that the presence of the plasmonic nanostructure leads to strong modification of both the resonance fluorescence spectrum and the transition from antibunching to bunching for the fluorescent photons. In addition, we show that both the resonance fluorescence spectrum and the second-order correlation function are strongly phase-dependent so that the relative phase of laser fields can be used for the efficient control of the resonance fluorescence characteristics. The results are explained by using a dressed-state picture.

Physical Review A•Apr 17, 2017•28 citations

Resonance fluorescence in intense laser fields

Dan E. Browne

Journal of Modern Optics•Jul 10, 2000•1 citation
Abstract Editor's Choice of this issue is the article by D. Schwedt et al. [1] on high resolution measurements of resonance fluorescence spectra from GaAs quantum wells. In the cover picture, the authors point out the connection between the experimental data and the model of disordered excitons. The lower left part shows a series of polarized photoluminescence spectra, fitted with very good agreement by a model of statistically distributed three‐level‐systems. The upper right part images the excitation mechanism. Only those excitons of an inhomogeneous distribution (indicated by the blue line) contribute to the resonance fluorescence (red line) which overlap spectrally with the monochromatic laser. It could be verified experimentally that the resonance fluorescence exhibits two parts: delta‐like Rayleigh scattering and Lorentzian luminescence. Daniel Schwedt is working in the DFG research group 'Quantum Optics in Semiconductor Nanostructures' and concentrates on quantum optical experiments on III–V semiconductor quantum well structures.
We present a theoretical study of the resonance fluorescence of a four-level double-V\mathsf{V}V-type quantum emitter near a plasmonic nanostructure. The quantum system interacts with two orthogonal circularly polarized laser fields with the same frequency and intensity, but with different phases. For the plasmonic nanostructure we consider a two-dimensional array of metal-coated dielectric nanospheres. We show that the presence of the plasmonic nanostructure leads to strong modification of both the resonance fluorescence spectrum and the transition from antibunching to bunching for the fluorescent photons. In addition, we show that both the resonance fluorescence spectrum and the second-order correlation function are strongly phase-dependent so that the relative phase of laser fields can be used for the efficient control of the resonance fluorescence characteristics. The results are explained by using a dressed-state picture.