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Optics and Precision Engineering

Improvement of high-gain shot-noise detector

Zhou Hai-ju

Published Jan 1, 2013• 0 citations
OpenAlex

Abstract

Based on the special demands of quantum optical experiments for low noise detectors,a high gain and shot noise detector was designed by combing an AC current coupled trans-impedance pre-amplify circuit and an ETX500photodiode.Compared with existing detectors,the designed detector shows better characteristics in gain,bandwidth and AC DC saturation.The output characteristics of the detector were measured by using a 1 064nm single frequency laser as a source and a frequency spectrum analyzer as the measuring instrument.Measuring results show that the power noise spectrum of the detector is 10dB higher than that of electronic noise spectrum when the injecting power for the detector is more than 850μW at 2MHz.Furthermore,the bandwidth of the shot noise detector reaches 5MH when the input infrared laser power is above 1.62mW.The remarkable linearities for the DC and AC currents are available when the input infrared laser power is increased to 36mW.Considering its higher gain and better DC AC saturation characteristics,the detector is advantageous to quantum optic experiments.

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Based on the special demands of quantum optical experiments for low noise detectors,a high gain and shot noise detector was designed by combing an AC current coupled trans-impedance pre-amplify circuit and an ETX500photodiode.Compared with existing detectors,the designed detector shows better characteristics in gain,bandwidth and AC DC saturation.The output characteristics of the detector were measured by using a 1 064nm single frequency laser as a source and a frequency spectrum analyzer as the measuring instrument.Measuring results show that the power noise spectrum of the detector is 10dB higher than that of electronic noise spectrum when the injecting power for the detector is more than 850μW at 2MHz.Furthermore,the bandwidth of the shot noise detector reaches 5MH when the input infrared laser power is above 1.62mW.The remarkable linearities for the DC and AC currents are available when the input infrared laser power is increased to 36mW.Considering its higher gain and better DC AC saturation characteristics,the detector is advantageous to quantum optic experiments.
Profound advancements in quantum optics create necessity to analyze and detect correlated photon pairs.Technologies so far developed to support quantum optics are done mainly to offer new possibilities towards experimental tests dealing with basic principles of quantum mechanics.Dynamic range amplifier is designed for detection of shot noise current obtained due to squeezing or entanglement in laser.The amplification of the Ac current (shot noise current) and DC current is done using this enhanced amplifier with the available input power.The performance of the system is notable from the significant increase in amplifier gain over a wide range of frequency.Therefore this design is tested for various input powers and it is concluded that it plays a very important role for a wide variety of applications, especially in weak signal detection.
A well-balanced detector with high sensitivity and low noise is presented in this paper. The two-stage amplification structure is used to increase electronic gain while keeping an effective bandwidth of about 70 MHz. In order to further reduce electronic noise, a junction field-effect transistor(JFET) is connected between photodiodes and transimpedance amplifier to reduce the impact of amplifier leakage current. Benefit from these designs, the root-mean-square(RMS) of noise voltage is about 6 mV with a gain of 3.2E5 V/W, and it means an ultra-low noise equivalent power density of 2.2E-12 W/rtHz, only half of common low-noise commercial detectors. In addition, two photodiodes in similar frequency response are selected for detector and make the common mode rejection ratio(CMRR) of detector reached 53 dB, about 13 dB higher than commercial detectors. Further tests indicate that 16.8 dB shot-noise to electronic-noise ratio is measured in our detector, which is better than most high speed balanced detectors.
We demonstrate a low-noise, high-gain, and large-dynamic-range photodetector (PD) based on a junction field-effect transistor (JFET) and a charge amplifier for the measurement of quantum noise in Bell-state detection (BSD). Particular photodiode junction capacitance allows the silicon N-channel JFET 2sk152 to be matched to the noise requirement for charge amplifier A250. The electronic noise of the PD is effectively suppressed and the signal-to-noise ratio (SNR) is up to 15 dB at the analysis frequency of 2.75 MHz for a coherent laser power of 50.08 µW. By combining of the inductor and capacitance, the alternating current (AC) and direct current (DC) branches of the PD can operate linearly in a dynamic range from 25.06 µW to 17.50 mW. The PD can completely meet the requirements of SNR and dynamic range for BSD in quantum optics experiments.
In this paper, a model for simulating the shot noise power and the electronic noise power of a balanced homodyne detector (BHD) using cascaded low noise amplifiers (LNAs) is presented. Moreover, the factors influencing the enhancement of BHD gain flatness are analyzed. Based on these theories, a BHD with a large clearance between shot noise and electronic noise, along with a flat broadband frequency response, is designed using LNAs and an optimized printed circuit board design. According to the experimental measurements, the bandwidth for 1 dB flatness reaches 1.4 GHz with the -3 dB bandwidth extending up to 1.55 GHz. With a 4 mW optical signal input, a signal-to-noise ratio of 12 dB is obtained at 1 GHz. The BHD exhibits excellent linearity for shot noise output up to an 8 mW optical signal input and a tested common mode rejection ratio of 63 dB. This developed BHD is well-suited for applications in high-speed continuous variable quantum key distribution and quantum random number generation.
We design a low-noise, large-dynamic-range amplifier based on transimpedance amplifier (TIA) for detecting shot noise of 1064-nm laser in quantum optical experiments. Compared with a single-junction field-effect transistor (JFET) buffered TIA, the electronic noise is effectively 2.8 dB suppressed at the analysis of 2 MHz, and 4 dB suppressed at 4 MHz by means of a JFET bootstrap structure. Under the transimpedance gain of 200 kΩ and 0.5 pF, the measured shot noise at the injected laser power of 51 μW is 12.5 dB above the electronic noise at 2 MHz, and 9.8 dB at 4 MHz. With adjustment of bias condition of the bootstrap structure and application of a L-C (inductance and capacitance) structure, the dynamic range is largely boosted from the original 1.52 to 11.22 mW. The amplifier meets the requirement of SNR for Bell-state detection in quantum optical experiments.
A high-speed, low-noise transimpedance amplifier (TIA) circuit was developed for accurate monitoring and stabilization of cooling, Raman and repumping laser beams in cold atom interferometry sensors. Designed to preserve the shape and timing of short-duration optical pulses, the circuit ensures that pulse characteristics are faithfully reproduced and that absolute intensity levels are measured accurately—both of which are critical for maintaining interferometer phase stability and fringe contrast. The design achieves a transimpedance gain of 1.5×103V/A and a -3dB bandwidth of approximately 12MHz, with an output noise rms better than 258µV and a noise-equivalent power (NEP) better than 7.57×10⁻¹¹W/√Hz. Using the OPA847 operational amplifier and an FDS100 photodiode, comprehensive LTspice simulations—including transient response, AC frequency response and noise analysis—validate that the circuit reliably captures short optical pulses with low noise, making it suitable for implementation in cold atom interferometry based quantum sensor applications.