Challenges
Datasets
Workspaces
Papers
Discussions
Leaderboard
Log inSign up
Challenges
Datasets
Workspaces
Papers
Discussions
Leaderboard
Blog
Job Board
Q3AS

© 2026 Aqora Quantum S.A.S.

TermsPrivacyLegal Notice

PRSM

The effect of the surface field on the phase diagrams of a transverse Ising thin film

H. Arhchoui, Y. El Amraoui

Published Mar 14, 2011• 0 citations
Publisher

Abstract

Within an effective field theory (EFT), the phase diagrams of a transverse Ising thin film (TIM) has been investigated. The effects of the Ωs on the critical temperature are discussed by including the modification of surface exchange interaction. The phase diagrams are also determinated as function of the transverse field for different values of the film thickness n and for same value of ∆s

DOI
10.34874/prsm.mjcm-vol7iss0.156

Related papers

The effects of bulk and surface fields on the phase diagram of a transverse Ising thin film

T. Kaneyoshi

Abstract The phase diagram of a transverse Ising thin film is investigated by the use of two theoretical frameworks, namely the standard mean field theory and the effective field theory. The effects of the ratio p between the bulk and surface transverse fields on the critical temperature are discussed by including the modification of surface exchange interaction. Some characteristic features are found in the phase diagrams when the ratio p increases from p = 1.0. They are enhanced for the film with thickness L smaller than 5.0. In particular, the critical ratio at which the critical temperature of the film with a finite transverse field reduces to zero, being independent of L, exhibits a linear relation when it is plotted against the modification of surface exchange interaction.

physica status solidi (b)•Apr 16, 2003•22 citations

Effective field approach to the Ising film in a transverse field

Luca Peliti, M. Saber

Within the framework of the effective field theory, we examine the phase transitions of the spin-12 Ising film in a transverse field. We study the critical temperature of the film as a function of the exchange interactions, the transverse field and the film thickness. We find that, if the ratio of the surface exchange interactions to the bulk ones R=Js/J is smaller than a critical value Rc, the critical temperature Tc/J of the film is smaller than the bulk critical temperature TcB/J and as R is increased further, Tc/J approaches TcB/J. On the other hand, if R>Rc, Tc/J is larger than the bulk TcB/J and the surface TcS/J critical temperatures of the corresponding semi-infinite system and as R is increased further, Tc/J approaches the surface critical temperature Tcs/J.

•Jan 1, 1999•11 citations

The effective susceptibility exponent in transverse Ising thin films

T. Kaneyoshi

Abstract By the use of both the standard mean field theory and the effective field theory with correlations the phase transition of the transverse Ising thin films is investigated with special emphasis to the behavior of the susceptibility χ(T) outside the critical regime. The exchange interaction and transverse field at the surfaces of the thin film take values different from those in the bulk. Various non‐monotonic temperature dependences of the effective exponent γ(T) introduced by Kouvel and Fisher are found, depending on the ratios of these properties between the surfaces and the bulk as well as the value of film thickness L. They are clearly different from the behavior in the bulk. (© 2003 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

physica status solidi (b)•Dec 12, 2003•10 citations

Phase diagrams in an ultra-thin spin-1 transverse Ising film with bond or site dilution at surfaces

T. Kaneyoshi

The phase diagrams of two nanoscaled thin films with bond and site dilutions at the surfaces, described by the spin-1 transverse Ising model, are investigated by the use of an effective field theory with correlations. A number of characteristic phenomena have been found in them, which are heavily dependent on the ratios (r = J1/J and p = ΩS/Ω, where J is the exchange interaction in the inner layer, J1 is the exchange interaction between the surface and the next inner layer, ΩS is the transverse field at the surfaces and Ω is the transverse field in the inner layer). Some of them have exhibited very similar behaviors found in the two spin-1/2 nanoscaled thin films with bond and site dilutions at the surfaces.

Phase Transitions•Apr 29, 2013•11 citations

Phase Diagrams of the Semi-Infinite Spin-1/2 Ising Model and Spin-1/2 Ising Film in a Random Transverse Surface Field

B. Laaboudi, M. Saber, M. Kerouad

The critical behavior of both semi-infinite spin-1/2 Ising system and spin-1/2 Ising film in a random transverse surface field has been studied within an effective field theory. The effect of the ratio R of the surface exchange interaction to the bulk one, random transverse surface field and film thickness on the phase diagrams are investigated.

physica status solidi (b)•Mar 1, 1999•7 citations

Phase diagrams of diluted ferromagnetic Ising films in a transverse field

J. C. Cressoni, J.W. Tucker, Enaldo F. Sarmento

An effective-field theory that accounts for the self-spin correlation function is used to study the effect of surface dilution on the critical behavior of a ferromagnetic Ising film in transverse surface and bulk fields. Surface exchange enhancement (or reduction) is considered. It is shown that the surface and bulk fields affect the critical ratio of surface to bulk interactions, at which the surface orders before the bulk, in opposite ways. Although it is found that for the undiluted film this leads to a critical ratio that is practically insensitive to field for common bulk and surface field strengths, this feature is relaxed to a certain degree with surface dilution. The thickness dependence of the critical temperature, and phase diagrams in the fields, interaction strength ratio, and dilution parameter space, are presented.

Journal of Applied Physics•May 15, 1994•5 citations
Within an effective field theory (EFT), the phase diagrams of a transverse Ising thin film (TIM) has been investigated. The effects of the Ωs on the critical temperature are discussed by including the modification of surface exchange interaction. The phase diagrams are also determinated as function of the transverse field for different values of the film thickness n and for same value of ∆s
Abstract The phase diagram of a transverse Ising thin film is investigated by the use of two theoretical frameworks, namely the standard mean field theory and the effective field theory. The effects of the ratio p between the bulk and surface transverse fields on the critical temperature are discussed by including the modification of surface exchange interaction. Some characteristic features are found in the phase diagrams when the ratio p increases from p = 1.0. They are enhanced for the film with thickness L smaller than 5.0. In particular, the critical ratio at which the critical temperature of the film with a finite transverse field reduces to zero, being independent of L, exhibits a linear relation when it is plotted against the modification of surface exchange interaction.
Within the framework of the effective field theory, we examine the phase transitions of the spin-12 Ising film in a transverse field. We study the critical temperature of the film as a function of the exchange interactions, the transverse field and the film thickness. We find that, if the ratio of the surface exchange interactions to the bulk ones R=Js/J is smaller than a critical value Rc, the critical temperature Tc/J of the film is smaller than the bulk critical temperature TcB/J and as R is increased further, Tc/J approaches TcB/J. On the other hand, if R>Rc, Tc/J is larger than the bulk TcB/J and the surface TcS/J critical temperatures of the corresponding semi-infinite system and as R is increased further, Tc/J approaches the surface critical temperature Tcs/J.
Abstract By the use of both the standard mean field theory and the effective field theory with correlations the phase transition of the transverse Ising thin films is investigated with special emphasis to the behavior of the susceptibility χ(T) outside the critical regime. The exchange interaction and transverse field at the surfaces of the thin film take values different from those in the bulk. Various non‐monotonic temperature dependences of the effective exponent γ(T) introduced by Kouvel and Fisher are found, depending on the ratios of these properties between the surfaces and the bulk as well as the value of film thickness L. They are clearly different from the behavior in the bulk. (© 2003 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)
The phase diagrams of two nanoscaled thin films with bond and site dilutions at the surfaces, described by the spin-1 transverse Ising model, are investigated by the use of an effective field theory with correlations. A number of characteristic phenomena have been found in them, which are heavily dependent on the ratios (r = J1/J and p = ΩS/Ω, where J is the exchange interaction in the inner layer, J1 is the exchange interaction between the surface and the next inner layer, ΩS is the transverse field at the surfaces and Ω is the transverse field in the inner layer). Some of them have exhibited very similar behaviors found in the two spin-1/2 nanoscaled thin films with bond and site dilutions at the surfaces.
An effective-field theory that accounts for the self-spin correlation function is used to study the effect of surface dilution on the critical behavior of a ferromagnetic Ising film in transverse surface and bulk fields. Surface exchange enhancement (or reduction) is considered. It is shown that the surface and bulk fields affect the critical ratio of surface to bulk interactions, at which the surface orders before the bulk, in opposite ways. Although it is found that for the undiluted film this leads to a critical ratio that is practically insensitive to field for common bulk and surface field strengths, this feature is relaxed to a certain degree with surface dilution. The thickness dependence of the critical temperature, and phase diagrams in the fields, interaction strength ratio, and dilution parameter space, are presented.