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physica status solidi (b)

The effects of bulk and surface fields on the phase diagram of a transverse Ising thin film

T. Kaneyoshi

Published Apr 16, 2003• 22 citations
Publisher

Abstract

Abstract The phase diagram of a transverse Ising thin film is investigated by the use of two theoretical frameworks, namely the standard mean field theory and the effective field theory. The effects of the ratio p between the bulk and surface transverse fields on the critical temperature are discussed by including the modification of surface exchange interaction. Some characteristic features are found in the phase diagrams when the ratio p increases from p = 1.0. They are enhanced for the film with thickness L smaller than 5.0. In particular, the critical ratio at which the critical temperature of the film with a finite transverse field reduces to zero, being independent of L, exhibits a linear relation when it is plotted against the modification of surface exchange interaction.

DOI
10.1002/pssb.200301627

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Abstract The phase diagram of a transverse Ising thin film is investigated by the use of two theoretical frameworks, namely the standard mean field theory and the effective field theory. The effects of the ratio p between the bulk and surface transverse fields on the critical temperature are discussed by including the modification of surface exchange interaction. Some characteristic features are found in the phase diagrams when the ratio p increases from p = 1.0. They are enhanced for the film with thickness L smaller than 5.0. In particular, the critical ratio at which the critical temperature of the film with a finite transverse field reduces to zero, being independent of L, exhibits a linear relation when it is plotted against the modification of surface exchange interaction.
Abstract By the use of both the standard mean field theory and the effective field theory with correlations the phase transition of the transverse Ising thin films is investigated with special emphasis to the behavior of the susceptibility χ(T) outside the critical regime. The exchange interaction and transverse field at the surfaces of the thin film take values different from those in the bulk. Various non‐monotonic temperature dependences of the effective exponent γ(T) introduced by Kouvel and Fisher are found, depending on the ratios of these properties between the surfaces and the bulk as well as the value of film thickness L. They are clearly different from the behavior in the bulk. (© 2003 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)
Within the framework of the effective field theory, we examine the phase transitions of the spin-12 Ising film in a transverse field. We study the critical temperature of the film as a function of the exchange interactions, the transverse field and the film thickness. We find that, if the ratio of the surface exchange interactions to the bulk ones R=Js/J is smaller than a critical value Rc, the critical temperature Tc/J of the film is smaller than the bulk critical temperature TcB/J and as R is increased further, Tc/J approaches TcB/J. On the other hand, if R>Rc, Tc/J is larger than the bulk TcB/J and the surface TcS/J critical temperatures of the corresponding semi-infinite system and as R is increased further, Tc/J approaches the surface critical temperature Tcs/J.
An effective-field theory that accounts for the self-spin correlation function is used to study the effect of surface dilution on the critical behavior of a ferromagnetic Ising film in transverse surface and bulk fields. Surface exchange enhancement (or reduction) is considered. It is shown that the surface and bulk fields affect the critical ratio of surface to bulk interactions, at which the surface orders before the bulk, in opposite ways. Although it is found that for the undiluted film this leads to a critical ratio that is practically insensitive to field for common bulk and surface field strengths, this feature is relaxed to a certain degree with surface dilution. The thickness dependence of the critical temperature, and phase diagrams in the fields, interaction strength ratio, and dilution parameter space, are presented.