Challenges
Datasets
Workspaces
Papers
Discussions
Leaderboard
Log inSign up
Challenges
Datasets
Workspaces
Papers
Discussions
Leaderboard
Blog
Job Board
Q3AS

© 2026 Aqora Quantum S.A.S.

TermsPrivacyLegal Notice

Conference on Lasers and Electro-Optics

Coherent control for femtosecond switching of vertical-cavity surface-emitting lasers

Ramsay, Heberle, Hammura, Cleaver

Published Jan 1, 2004• 0 citations
OpenAlex

Related papers

Coherent Population Trapping by Direct Current Modulation of a Vertical Cavity Surface Emitting Laser

Sang Min Lee, Ho-Jung KIM, Han Seb Moon

New Physics Sae Mulli•Jul 27, 2012•0 citations

Polarization Modulated Vertical-Cavity Surface-Emitting Lasers in Quantum Key Distribution

Ágoston Schranz, Eszter Udvary

Springer series in optical sciences/SPringer series in optical sciences•Jan 1, 2019•2 citations

Squeezed light generation with single polarisation mode Vertical Cavity Surface Emitting Lasers: Theory and Experiment

Jean-Luc C. Vey, Ch. Degen, W. Elsaber

European Quantum Electronics Conference (EQEC)•Aug 24, 2005•0 citations

Optical memory using a vertical-cavity surface emitting laser

Diana L. Huffaker, W.D. Lee, DENNIS GLENN DEPPE +4 more

Data are presented demonstrating optical switching and memory in a bistable vertical-cavity surface-emitting laser (VCSEL). Optical switching from lasing to nonlasing or from nonlasing to lasing in the vertical-cavity laser was demonstrated using an AlGaAs probe laser at approximately 0.78 mu m.>

IEEE Photonics Technology Letters•Dec 1, 1991•10 citations

Optical Coherent Transients by Laser Frequency-Switching

Richard G. Brewer, Azriel Z. Genack

Springer series in optical sciences/SPringer series in optical sciences•Jan 1, 1976•7 citations

High Switching-Speed Operation of Optical Memory Based on Polarization Bistable Vertical-Cavity Surface-Emitting Laser

Jun Sakaguchi, Takeo Katayama, Hitoshi Kawaguchi

Operation conditions of all-optical buffer memories based on polarization bistable vertical-cavity surface-emitting lasers (VCSELs) were investigated. The switching power dependence on the frequency detuning of the input optical signal was measured for a 980-nm polarization bistable VCSEL. The proper operating conditions for 10-Gb/s memory operation were also measured and found to be on the negative detuning side. Calculations based on a two-mode rate-equation model successfully explained the measured characteristics of the switching power dependence on the frequency detuning and the operating conditions. Maximum data rates for the memory operation strongly depended on theQfactor (i.e., photon lifetime) of the VCSELs. A possibility of 40-Gb/s memory operation using a polarization bistable VCSEL with aQfactor as low as 500 was shown.

IEEE Journal of Quantum Electronics•Sep 8, 2010•58 citations
Operation conditions of all-optical buffer memories based on polarization bistable vertical-cavity surface-emitting lasers (VCSELs) were investigated. The switching power dependence on the frequency detuning of the input optical signal was measured for a 980-nm polarization bistable VCSEL. The proper operating conditions for 10-Gb/s memory operation were also measured and found to be on the negative detuning side. Calculations based on a two-mode rate-equation model successfully explained the measured characteristics of the switching power dependence on the frequency detuning and the operating conditions. Maximum data rates for the memory operation strongly depended on theQfactor (i.e., photon lifetime) of the VCSELs. A possibility of 40-Gb/s memory operation using a polarization bistable VCSEL with aQfactor as low as 500 was shown.