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IEEE Photonics Technology Letters

Optical memory using a vertical-cavity surface emitting laser

Diana L. Huffaker, W.D. Lee, DENNIS GLENN DEPPE, Chun Lei, T. J. Rogers, Joe Charles Campbell, Ben G. Streetman

Published Dec 1, 1991• 10 citations
Publisher

Abstract

Data are presented demonstrating optical switching and memory in a bistable vertical-cavity surface-emitting laser (VCSEL). Optical switching from lasing to nonlasing or from nonlasing to lasing in the vertical-cavity laser was demonstrated using an AlGaAs probe laser at approximately 0.78 mu m.>
DOI
10.1109/68.118001

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Optical buffer memory for 10-Gb/s data signal is demonstrated experimentally using a polarization bistable vertical-cavity surface-emitting laser (VCSEL). The optical buffer memory is based on an optical AND gate function and the polarization bistability of the VCSEL. Fast AND gate operation responsive to 50-ps-width optical pulses is achieved experimentally by increasing the detuning frequency between an injection light into the VCSEL and a lasing light from the VCSEL. A specified bit is extracted from the 10-Gb/s data signal by the fast AND gate operation and is stored as the polarization state of the VCSEL by the polarization bistability. The corresponding numerical simulations are also performed using two-mode rate equations taking into account the detuning frequency. The simulation results confirm the fast AND gate operation by increasing the detuning frequency as well as the experimental results.
Operation conditions of all-optical buffer memories based on polarization bistable vertical-cavity surface-emitting lasers (VCSELs) were investigated. The switching power dependence on the frequency detuning of the input optical signal was measured for a 980-nm polarization bistable VCSEL. The proper operating conditions for 10-Gb/s memory operation were also measured and found to be on the negative detuning side. Calculations based on a two-mode rate-equation model successfully explained the measured characteristics of the switching power dependence on the frequency detuning and the operating conditions. Maximum data rates for the memory operation strongly depended on theQfactor (i.e., photon lifetime) of the VCSELs. A possibility of 40-Gb/s memory operation using a polarization bistable VCSEL with aQfactor as low as 500 was shown.
Experimental Demonstration of Multi-Bit Optical Buffer Memory Using 1.55-μm\mu{\hbox {m}}μm Polarization Bistable Vertical-Cavity Surface-Emitting Lasers
We demonstrate a novel all-optical buffer memory using 1.55-μm polarization bistable vertical-cavity surface-emitting lasers (VCSELs). A one-bit data is stored as one of two orthogonal polarization states of a VCSEL in this memory. The polarization state is transferred from the VCSEL to another VCSEL which is optically connected in cascade as a shift register. A 4-bit optical buffer memory is constructed using two sets of the shift-register memory connected in parallel. These results show the technical feasibility of multi-bit optical buffer memory.
The fastest operation of all-optical flip-flop memory was experimentally demonstrated using a 980-nm polarization bistable vertical-cavity surface-emitting laser (VCSEL). Operating conditions of the input signal power and the frequency detuning to achieve the fast optical memory operation were characterized experimentally. At the optimum condition, 1-bit data signals were arbitrarily sampled and memorized from a 26-1 pseudorandom bit sequence return-to-zero signal at 20 Gb/s by using AND gate and memory functionalities obtained from the polarization bistability. In addition, 1-bit memory operation was achieved for a 6-bit non-return-to-zero signal at 40 Gb/s. Both memory operations had optical gain.
The fastest known operation of all-optical flip-flop memory was experimentally demonstrated using a 980-nm polarization bistable vertical-cavity surface-emitting laser (VCSEL). Operating conditions of the input signal power and the frequency detuning to achieve the fast optical memory operation were characterized experimentally. At the optimum condition, 1-bit data signals were arbitrarily sampled and memorized from a 2(6)-1 pseudorandom bit sequence return-to-zero signal at 20 Gb/s by using AND gate and memory functionalities obtained from the polarization bistability. In addition, 1-bit memory operation was achieved for a 6-bit non-return-to-zero signal at 40 Gb/s. Both memory operations required 250-microW data signal power and had optical gain. The high potential of all-optical flip-flop memories based on polarization bistable VCSELs for use in ultrafast all-optical future networks was demonstrated.