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Chinese Physics Letters

Nitrogen-Doped Chemical Vapour Deposited Diamond： a New Material for Room-Temperature Solid State Maser

Poklonski, Lapchuk, Khomich, 吕反修, 唐伟忠, Ralchenko, Wlasov, Chukichev, Sambuu, Munkhtsetseg

Published Jan 1, 2007• 0 citations
OpenAlex

Abstract

在 dcarc 喷气和微波血浆化学药品蒸汽免职种的多晶的钻石电影的电子旋转回声(ESR ) 被学习。有直到 8 x 10 的氮杂质集中(18 ) 的电影厘米(-3) 被拉曼，阴极射线发光和光吸收也描绘系列。从有 2.0024 的 g 因素(在钻石格子的氮杂质原子占据 C 地点) 的 P1 中心的 ESR 信号被发现与在一个 H-102 共鸣器增加微波力量展出倒置。当微波激射的媒介在房间温度操作了，旋转倒置效果能具有为做 N 的钻石的进一步的考虑的兴趣。

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在 dcarc 喷气和微波血浆化学药品蒸汽免职种的多晶的钻石电影的电子旋转回声(ESR ) 被学习。有直到 8 x 10 的氮杂质集中(18 ) 的电影厘米(-3) 被拉曼，阴极射线发光和光吸收也描绘系列。从有 2.0024 的 g 因素(在钻石格子的氮杂质原子占据 C 地点) 的 P1 中心的 ESR 信号被发现与在一个 H-102 共鸣器增加微波力量展出倒置。当微波激射的媒介在房间温度操作了，旋转倒置效果能具有为做 N 的钻石的进一步的考虑的兴趣。
Electron spin resonance (ESR) in polycrystalline diamond films grown by dc arc-jet and microwave plasma chemical vapour deposition is studied. The films with nitrogen impurity concentration up to 8 × 10 18 cm −3 are also characterized by Raman, cathodoluminescence and optical absorption spectra. The ESR signal from P1 centre with g -factor of 2.0024 (nitrogen impurity atom occupying C site in diamond lattice) is found to exhibit an inversion with increasing the microwave power in an H 102 resonator. The spin inversion effect could be of interest for further consideration of N-doped diamonds as a medium for masers operated at room temperature.
Here we report the room-temperature and low-temperature absorption spectroscopy (UV-VIS-NIR), and electron paramagnetic resonance spectroscopy (EPR) conducted over a range of chemical vapour deposition (CVD) grown diamond samples. Room temperature absorption and fluorescence studies are shown. We also compared the room-temperature spectra with the experimental results conducted at 80 K. Finally, we used these data to calculate the density of NV in these samples that is responsible for the maser action. The number of NV defect centres is crucial since the total available number of NVs that are useful for maser are limited by the hyperfme coupling with nitrogen. From our previous studies, an NV concentration that lies between 0.2 to 2 ppm will offer the best solution in terms of pumping efficiency and uniform pumping rate for maser.
Tin-Vacancy (Sn-V) colour centres in diamond have a spin coherence time in the millisecond range at temperatures of 2 K, so they are promising to be used in diamond-based quantum optical devices. However, the incorporation of large Sn atoms into a dense diamond lattice is a non-trivial problem. The objective of our work is to use microwave plasma-assisted chemical vapour deposition (CVD) to grow Sn-doped diamond with submicron SnO 2 particles as a solid-state source of impurity. Well-faceted diamond microcrystals with sizes of a few micrometres were formed on AlN substrates. The photoluminescence (PL) signal with zero-phonon line (ZPL) peak for Sn-V centre at ≈620 nm was measured at room temperature (RT) and at 7 K. The peak width (full width at half-maximum) was measured to be 1.1–1.7 nm at RT and ≈0.05 nm at 7 K. The observed variations of ZPL shape and position, in particular, narrowing of PL peak at RT and formation of single-line fine structure at low- T , are attributed to strain in the crystallites. The diamond doping with Sn via CVD process offers a new route to from Sn-V colour centre in the bulk of the diamond crystallites. This article is part of the Theo Murphy meeting issue 'Diamond for quantum applications'.