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Chinese Physics Letters

Nitrogen-Doped Chemical Vapour Deposited Diamond: a New Material for Room-Temperature Solid State Maser

Nikolai A. Poklonski, Н. М. Лапчук, Alexander V. Khomich, LU Fan-xiu, Tang Weizhong, Victor Ralchenko, Igor I. Vlasov, Mikhail V. Chukichev, Munkhtsetseg Sambuu

Published Jun 28, 2007• 8 citations
Publisher

Abstract

Electron spin resonance (ESR) in polycrystalline diamond films grown by dc arc-jet and microwave plasma chemical vapour deposition is studied. The films with nitrogen impurity concentration up to 8 × 10 18 cm −3 are also characterized by Raman, cathodoluminescence and optical absorption spectra. The ESR signal from P1 centre with g -factor of 2.0024 (nitrogen impurity atom occupying C site in diamond lattice) is found to exhibit an inversion with increasing the microwave power in an H 102 resonator. The spin inversion effect could be of interest for further consideration of N-doped diamonds as a medium for masers operated at room temperature.

DOI
10.1088/0256-307x/24/7/083

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在 dcarc 喷气和微波血浆化学药品蒸汽免职种的多晶的钻石电影的电子旋转回声(ESR ) 被学习。有直到 8 x 10 的氮杂质集中(18 ) 的电影厘米(-3) 被拉曼，阴极射线发光和光吸收也描绘系列。从有 2.0024 的 g 因素(在钻石格子的氮杂质原子占据 C 地点) 的 P1 中心的 ESR 信号被发现与在一个 H-102 共鸣器增加微波力量展出倒置。当微波激射的媒介在房间温度操作了，旋转倒置效果能具有为做 N 的钻石的进一步的考虑的兴趣。

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Electron spin resonance (ESR) in polycrystalline diamond films grown by dc arc-jet and microwave plasma chemical vapour deposition is studied. The films with nitrogen impurity concentration up to 8 × 10 18 cm −3 are also characterized by Raman, cathodoluminescence and optical absorption spectra. The ESR signal from P1 centre with g -factor of 2.0024 (nitrogen impurity atom occupying C site in diamond lattice) is found to exhibit an inversion with increasing the microwave power in an H 102 resonator. The spin inversion effect could be of interest for further consideration of N-doped diamonds as a medium for masers operated at room temperature.
在 dcarc 喷气和微波血浆化学药品蒸汽免职种的多晶的钻石电影的电子旋转回声(ESR ) 被学习。有直到 8 x 10 的氮杂质集中(18 ) 的电影厘米(-3) 被拉曼，阴极射线发光和光吸收也描绘系列。从有 2.0024 的 g 因素(在钻石格子的氮杂质原子占据 C 地点) 的 P1 中心的 ESR 信号被发现与在一个 H-102 共鸣器增加微波力量展出倒置。当微波激射的媒介在房间温度操作了，旋转倒置效果能具有为做 N 的钻石的进一步的考虑的兴趣。
Here we report the room-temperature and low-temperature absorption spectroscopy (UV-VIS-NIR), and electron paramagnetic resonance spectroscopy (EPR) conducted over a range of chemical vapour deposition (CVD) grown diamond samples. Room temperature absorption and fluorescence studies are shown. We also compared the room-temperature spectra with the experimental results conducted at 80 K. Finally, we used these data to calculate the density of NV in these samples that is responsible for the maser action. The number of NV defect centres is crucial since the total available number of NVs that are useful for maser are limited by the hyperfme coupling with nitrogen. From our previous studies, an NV concentration that lies between 0.2 to 2 ppm will offer the best solution in terms of pumping efficiency and uniform pumping rate for maser.
Tin-Vacancy (Sn-V) colour centres in diamond have a spin coherence time in the millisecond range at temperatures of 2 K, so they are promising to be used in diamond-based quantum optical devices. However, the incorporation of large Sn atoms into a dense diamond lattice is a non-trivial problem. The objective of our work is to use microwave plasma-assisted chemical vapour deposition (CVD) to grow Sn-doped diamond with submicron SnO 2 particles as a solid-state source of impurity. Well-faceted diamond microcrystals with sizes of a few micrometres were formed on AlN substrates. The photoluminescence (PL) signal with zero-phonon line (ZPL) peak for Sn-V centre at ≈620 nm was measured at room temperature (RT) and at 7 K. The peak width (full width at half-maximum) was measured to be 1.1–1.7 nm at RT and ≈0.05 nm at 7 K. The observed variations of ZPL shape and position, in particular, narrowing of PL peak at RT and formation of single-line fine structure at low- T , are attributed to strain in the crystallites. The diamond doping with Sn via CVD process offers a new route to from Sn-V colour centre in the bulk of the diamond crystallites. This article is part of the Theo Murphy meeting issue 'Diamond for quantum applications'.
The application of masers is limited by its demanding working conditions (high vacuum or low temperature). A room-temperature solid-state maser is highly desirable, but the lifetimes of emitters (electron spins) in solids at room temperature are usually too short (∼ns) for population inversion. Masing from pentacene spins in p-terphenyl crystals, which have a long spin lifetime (∼0.1 ms), has been demonstrated. This maser, however, operates only in the pulsed mode. Here we propose a room-temperature maser based on nitrogen-vacancy centres in diamond, which features the longest known solid-state spin lifetime (∼5 ms) at room temperature, high optical pumping efficiency (∼10(6) s(-1)) and material stability. Our numerical simulation demonstrates that a maser with a coherence time of approximately minutes is feasible under readily accessible conditions (cavity Q-factor ∼5 × 10(4), diamond size ∼3 × 3 × 0.5 mm(3) and pump power <10 W). A room-temperature diamond maser may facilitate a broad range of microwave technologies.
This thesis reports research conducted on point defects in single crystal diamond utilising the complementary techniques of electron paramagnetic resonance (EPR), optical absorption and photoluminescence (PL) spectroscopy. Intentional silicon-doping of chemical vapour deposition (CVD) diamond allowed the production of samples grown on differently oriented substrates and containing distinct silicon isotopic abundances. The EPR spectrum of the neutral charge state of the silicon split-vacancy centre in diamond, (Si-V)0, has been characterised in the literature. Evidence for the assignment of the 1.31 eV zero phonon line (ZPL) seen in absorption and PL to the 3A2g -> 3A1u transition arising at (Si-V)0 is presented. Reversible charge transfer between the negatively charged centre, (Si-V)− (ZPL at 1.68 eV), and (Si-V)0 enabled the determination of calibration factors relating defect concentrations to their respective ZPL intensities. Preferential alignment of trigonal centres, such as (Si-V), in CVD material grown on {110}-substrates has been observed. The formation of (Si-V) centres during CVD synthesis and via irradiation and annealing of silicon-doped diamond was studied. Variable temperature EPR spectroscopy under illumination was used to investigate the optical spin polarisation (SP) of the (Si-V)0 3A2g ground state. Two different mechanisms for the SP are considered; selective intersystem crossing of (Si-V)0, and photoionisation of (Si-V)−. The properties of (Si-V)0 are compared to those of the extensively studied negatively charged nitrogen vacancy centre, (N-V)−. The effective spin-lattice relaxation and spin polarisation rates for both centres during continuous illumination are explored using pulsed EPR methods. A new defect, labelledWAR3, with spin S = 1 2 was observed in silicon-doped diamond and characterised using multifrequency EPR. Analysis of the data revealed that WAR3 is the neutral charge state of a silicon divacancy complex decorated by a hydrogen atom, (Si-V2:H)0. The experimentally derived 29Si and 1H hyperfine parameters are in good agreement with the values calculated using the spindensity- functional technique, confirming this model and ruling out a non-planar structure.
We propose a method to create a room-temperature maser operating at approximately 2.9~GHz frequency using an ensemble of negatively charged nitrogen-vacancy electronic spins (NV) in diamond, without requiring population inversion. Our method considers a DC magnetic field of a few milli-Tesla (mT) applied along the perpendicular direction of an ensemble of NV spins aligned along a common axis. This perpendicular magnetic-field creates superposition states of ∣ms=−1⟩|m_{\mathrm{s}}=-1\rangle∣ms​=−1⟩ and ∣ms=+1⟩|m_{\mathrm{s}}=+1\rangle∣ms​=+1⟩ of the NV spin's ground state triplet levels and thereby makes it possible to drive all three transitions in the NV spin ground state. We model the system by including optical pumping of the NV spins, near-resonant driving of two transitions, and coupling the third transition to a near-resonant microwave resonator. Numerical estimates using experimentally realizable parameters show that inversionless masing can be achieved inside the microwave resonator using our method. As an application, we show that the output intensity of an inversionless maser (1.1×10141.1\times10^{14}1.1×1014 spins) can be used for magnetic field sensing with a DC sensitivity on the order of a hundred pT/Hz\sqrt{\mathrm{Hz}}Hz​. Our study opens a new direction in room-temperature diamond NV maser devices for quantum technological applications without the requirement of a strong bias magnetic field, as in conventional NV diamond masers.