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Bulletin of the American Physical Society

Harnessing Nitrogen Vacancy Centers in Diamond for Next-Generation Quantum Science and Technology

Chunhui Du

Published Mar 15, 2021• 0 citations
OpenAlex

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Achieving Ultralong Spin Coherent Time of Single Nitrogen Vacancy Centers in Diamond

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Abstract Single negatively charged nitrogen vacancy (NV−) centers in diamond have emerged as promising platforms for quantum information science, where long coherence times are essential for advancing quantum technologies. However, traditional fabrication methods often introduce lattice damage during the irradiation process used to create vacancies, significantly impairing the spin coherence properties of NV− centers. In this study, we systematically investigate high-pressure/high-temperature (HPHT) annealing as a non-destructive approach to generate high-coherence single NV− centers and elucidate the underlying mechanisms. Our results reveal that the distortion of the lattice field significantly influences the preferential formation of NV− centers at the interface of the 〈111〉-growth sector during diamond crystallization. Moreover, HPHT annealing effectively mobilizes nitrogen and vacancies, significantly promoting the formation of single NV− centers. This process also mitigates the influence of the distortion of the lattice field, resulting in a marked enhancement of coherence properties, with T 2 times reaching 578 μs. Notably, a naturally formed single NV− center in a low-stress region achieves an exceptional T 2 time of 721 μs, representing one of the highest values reported for diamonds with natural 13C abundance. Building on these insights, we have successfully achieved controlled, large-scale fabrication of high-coherence single NV− centers, providing essential guidance for future efforts to further enhance their coherence and establishing a robust foundation for their application in quantum technologies.

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Nitrogen-vacancy (NV) centers in diamond with coherent optical transitions are a promising candidate for quantum science and technology protocols. A widely used strategy for their creation is nitrogen-ion implantation and high-temperature annealing. The data presented in this work show that while low-strain, narrow-optical-linewidth NV centers are formed from naturally occurring ${}^{14}$N atoms, NV centers formed from the implanted ${}^{15}$N atoms show broadened optical transitions and experience higher strain. These results have immediate implications for the positioning accuracy of current NV center creation protocols.

arXiv:1812.11523•Physical review. B./Physical review. B•Apr 19, 2019•134 citations
Abstract Single negatively charged nitrogen vacancy (NV−) centers in diamond have emerged as promising platforms for quantum information science, where long coherence times are essential for advancing quantum technologies. However, traditional fabrication methods often introduce lattice damage during the irradiation process used to create vacancies, significantly impairing the spin coherence properties of NV− centers. In this study, we systematically investigate high-pressure/high-temperature (HPHT) annealing as a non-destructive approach to generate high-coherence single NV− centers and elucidate the underlying mechanisms. Our results reveal that the distortion of the lattice field significantly influences the preferential formation of NV− centers at the interface of the 〈111〉-growth sector during diamond crystallization. Moreover, HPHT annealing effectively mobilizes nitrogen and vacancies, significantly promoting the formation of single NV− centers. This process also mitigates the influence of the distortion of the lattice field, resulting in a marked enhancement of coherence properties, with T 2 times reaching 578 μs. Notably, a naturally formed single NV− center in a low-stress region achieves an exceptional T 2 time of 721 μs, representing one of the highest values reported for diamonds with natural 13C abundance. Building on these insights, we have successfully achieved controlled, large-scale fabrication of high-coherence single NV− centers, providing essential guidance for future efforts to further enhance their coherence and establishing a robust foundation for their application in quantum technologies.
Abstract Recent advancements in quantum technology have highlighted the potential of nitrogen-vacancy (NV) centers in diamond. However, realizing this potential requires overcoming challenges associated with the size, complexity, and cost of current optical systems. In this Perspective, we present a compact and portable confocal setup designed for efficient detection, initialization, and readout of single NV center photoluminescence signals, enabling coherent spin control and nanoscale-resolution magnetic field sensing.
Nitrogen-vacancy (NV) centers in diamond with coherent optical transitions are a promising candidate for quantum science and technology protocols. A widely used strategy for their creation is nitrogen-ion implantation and high-temperature annealing. The data presented in this work show that while low-strain, narrow-optical-linewidth NV centers are formed from naturally occurring 14{}^{14}14N atoms, NV centers formed from the implanted 15{}^{15}15N atoms show broadened optical transitions and experience higher strain. These results have immediate implications for the positioning accuracy of current NV center creation protocols.