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Chinese Physics Letters

Achieving Ultralong Spin Coherent Time of Single Nitrogen Vacancy Centers in Diamond

Xiaoran Zhang, Xinyu Zhuang, Xiaobing Liu

Published Mar 25, 2025• 9 citations

Abstract

Abstract Single negatively charged nitrogen vacancy (NV−) centers in diamond have emerged as promising platforms for quantum information science, where long coherence times are essential for advancing quantum technologies. However, traditional fabrication methods often introduce lattice damage during the irradiation process used to create vacancies, significantly impairing the spin coherence properties of NV− centers. In this study, we systematically investigate high-pressure/high-temperature (HPHT) annealing as a non-destructive approach to generate high-coherence single NV− centers and elucidate the underlying mechanisms. Our results reveal that the distortion of the lattice field significantly influences the preferential formation of NV− centers at the interface of the 〈111〉-growth sector during diamond crystallization. Moreover, HPHT annealing effectively mobilizes nitrogen and vacancies, significantly promoting the formation of single NV− centers. This process also mitigates the influence of the distortion of the lattice field, resulting in a marked enhancement of coherence properties, with T 2 times reaching 578 μs. Notably, a naturally formed single NV− center in a low-stress region achieves an exceptional T 2 time of 721 μs, representing one of the highest values reported for diamonds with natural 13C abundance. Building on these insights, we have successfully achieved controlled, large-scale fabrication of high-coherence single NV− centers, providing essential guidance for future efforts to further enhance their coherence and establishing a robust foundation for their application in quantum technologies.

DOI: 10.1088/0256-307x/42/4/047601

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Abstract Single negatively charged nitrogen vacancy (NV−) centers in diamond have emerged as promising platforms for quantum information science, where long coherence times are essential for advancing quantum technologies. However, traditional fabrication methods often introduce lattice damage during the irradiation process used to create vacancies, significantly impairing the spin coherence properties of NV− centers. In this study, we systematically investigate high-pressure/high-temperature (HPHT) annealing as a non-destructive approach to generate high-coherence single NV− centers and elucidate the underlying mechanisms. Our results reveal that the distortion of the lattice field significantly influences the preferential formation of NV− centers at the interface of the 〈111〉-growth sector during diamond crystallization. Moreover, HPHT annealing effectively mobilizes nitrogen and vacancies, significantly promoting the formation of single NV− centers. This process also mitigates the influence of the distortion of the lattice field, resulting in a marked enhancement of coherence properties, with T 2 times reaching 578 μs. Notably, a naturally formed single NV− center in a low-stress region achieves an exceptional T 2 time of 721 μs, representing one of the highest values reported for diamonds with natural 13C abundance. Building on these insights, we have successfully achieved controlled, large-scale fabrication of high-coherence single NV− centers, providing essential guidance for future efforts to further enhance their coherence and establishing a robust foundation for their application in quantum technologies.

ABSTRACT With unique optical and spin properties, the negatively charged nitrogen‐vacancy (NV − ) center in diamond has become a leading physical platform for quantum information processing. Fabrication of NV centers involves three steps: introducing nitrogen atoms, creating lattice vacancies, and combining these two types of defects. The final step is typically achieved by high‐temperature annealing, as vacancy migration in diamond is thermally activated above 600°C. Compared to low‐pressure high‐temperature (LPHT) annealing, high‐pressure and high‐temperature (HPHT) treatment allows for much higher annealing temperatures and longer durations, providing new opportunities to optimize key metrics of NV centers. This short review summarizes recent experimental progress in this direction. Dense NV centers with good spin coherence and single NV centers with excellent optical properties have been produced through HPHT growth and post‐treatment of single‐crystal diamonds. In addition, structural imaging, optical characterization, and DFT calculations provide further insights into the dynamics of defect migration under high‐temperature annealing. These results offer new perspectives on the fabrication of color centers in diamond and other wide‐gap semiconductor materials, including silicon carbide and hexagonal boron nitride, for advanced quantum applications.

Abstract The high‐pressure and high‐temperature (HPHT) diamonds with well‐controlled defects and low stress offer an ideal host substrate for the fields of quantum information science; however, fabrication of quantum‐grade HPHT diamonds remains a pressing challenge. Here, a major advance in generating highly coherent nitrogen‐vacancy (NV) centers, a promising spin defect in diamonds, via tailored HPHT synthesis and postgrown annealing treatment is reported. The resulting well‐dispersed single NV− centers in type‐IIa diamonds exhibit long spin coherence times comparable to that of the reported chemical vapor deposition diamonds. Moreover, high‐density NV− ensembles in 〈100〉‐grown type‐Ib diamonds with superb zero‐phonon lines considerably sharper than those of native NV− centers in as‐grown diamonds, together with low splitting of resonances are produced. These findings demonstrate a superior synthesis and optimization protocol for creating high‐quality NV− centers avoiding lattice damage in diamond to meet the stringent requirements for a wide range of emerging quantum technologies.

Abstract Nitrogen-vacancy (NV-) centres in diamond offer an excellent platform for device design and development in the emerging fields of quantum sensing and quantum network, but fabrication of quantum-grade diamonds with highly coherent NV- centres needed for advanced applications presents a pressing challenge. Here we report a major advance in generating NV- centres in diamonds via tailored high-pressure and high-temperature (HPHT) synthesis and post-grown annealing treatment. The resulting well dispersed single NV- centres in type-IIa diamonds exhibit long spin coherence times reaching the highest levels achieved in diamonds prepared by more elaborate and restrictive chemical vapor deposition techniques. Moreover, we produce high-density NV- ensembles in <100>-grown type-Ib diamonds with superb zero-phonon lines considerably sharper than those of native NV- centres in as-grown diamonds. These findings demonstrate a superior synthesis and optimization protocol for creating top-quality NV- centres to meet the most stringent requirements for a wide range of emerging quantum technologies.

Nitrogen-vacancy (N-

V

) centers in diamond are widely used in quantum information science, but existing methods to fabricate N-

V

centers rely on damaging the diamond lattice, and usually lead to poor optical coherence. The authors propose a nondestructive method, where high-purity diamonds are annealed under high pressure and high temperature, to generate N-

V

centers with excellent optical, spin, and charge properties. These results provide new insights into the diffusion dynamics of defects under extreme conditions, and indicate that even the ultrapure diamond contains enough nitrogen and vacancies to form N-

V

centers.

Abstract With their optical addressability of individual spins and long coherence time, nitrogen-vacancy (NV) centers in diamond are often called “atom-like solid spin-defects”. As observed with trapped atomic ions, quantum interference mediated by indistinguishable photons was demonstrated between remote NV centers. In high sensitivity DC magnetometry at room temperature, NV ensembles are potentially rivaling with alkali-atom vapor cells. However, local strain induces center-to-center variation of both optical and spin transitions of NV centers. Therefore, advanced engineering of diamond growth toward crystalline perfection is demanded. Here, we report on the synthesis of high-quality HPHT (high-pressure, high-temperature) crystals, demonstrating a small inhomogeneous broadening of the spin transitions, of T 2 * = 1.28 μs, approaching the limit for crystals with natural 13 C abundance, that we determine as T 2 * = 1.48 μs. The contribution from strain and local charges to the inhomogeneous broadening is lowered to ~17 kHz full width at half maximum for NV ensemble within a > 10 mm 3 volume. Looking at optical transitions in low nitrogen crystals, we examine the variation of zero-phonon-line optical transition frequencies at low temperatures, showing a strain contribution below 2 GHz for a large fraction of single NV centers.

Negatively charged nitrogen-vacancy (NV-) center in diamond has been paid attention as a highly sensitive detector for magnetic field. The magnetic sensitivity is proportional to the reciprocal of √(NT_2 ), where N is the number of NV centers and T2 is the spin coherence time. To improve the sensitivity, high concentration of NV- centers and extended coherence time are necessary. It is generally known that electron beam irradiation into type-Ib diamond which include high initial concentration of isolated substitutional nitrogen (P1 center) is a useful method to create high concentration of NV- centers. The electron beam irradiation generates vacancies in diamond and the subsequently annealing enables vacancies to diffuse in the lattice. Then diffused vacancies are captured by nitrogen atoms, as a result, NV centers are created. The post annealing has been performed at 1000°C or higher temperature for the purpose of improving the spin properties of NV- centers. In current study, we focused on post-annealing at high temperature to improve magnetic sensitivity of quantum sensing. We investigated annealing temperature and time dependence of the creation behavior of NV centers in type-Ib diamonds to understand appropriate annealing process for enhancing sensitivity of NV- center.