One of the highest performing single-photon detectors in the visible and near-infrared regions is the superconducting nanostrip photon detector (SNSPD or SSPD), which usually uses NbN or NbTiN as the superconductor. Using other superconductors may significantly improve, for example, the operating temperature and count rate characteristics. This paper briefly reviews the current state of the potential, characteristics, thin film growth, and nanofabrication process of SNSPD using various superconductors.
One of the highest performing single-photon detectors in the visible and near-infrared regions is the superconducting nanostrip photon detector (SNSPD or SSPD), which usually uses NbN or NbTiN as the superconductor. Using other superconductors may significantly improve, for example, the operating temperature and count rate characteristics. This paper briefly reviews the current state of the potential, characteristics, thin film growth, and nanofabrication process of SNSPD using various superconductors.
Superconducting single-photon detectors (SSPDs) have developed into a mature device technology and excel due outstanding performance metrics, in particular high detection efficiency combined with high time resolution and low dark count rate for a wide wavelength range from the visible to the mid-infrared. In addition to commercially available systems with devices coupled to optical fibers, SSPDs can be integrated with photonic circuits using scalable nanofabrication technologies. Here, we will present recent progress on SSPDs based on NbTiN thin films and their integration on different photonic material platforms. Our process for NbTiN growth at room temperature will be described, using magnetron reactive co-sputtering to achieve high-quality superconducting layers down to thicknesses of few nanometres. Optimized SSPD devices are realized by tuning the superconducting properties of NbTiN thin films, adjusting the material composition and nanocrystalline structure. The realization of different types of detectors and geometries will be shown, including nanofabrication techniques for achieving fully suspended nanowire structures. Furthermore, we will discuss challenges and prospects for scaling-up SSPD device technology as well as detector systems. Multiplexing schemes such as dispersion engineering of superconducting transmission lines will be highlighted as powerful approach to address multiple detectors and reduce the number of required feedthroughs and electrical lines in the cryostat. Eventually, exemplary applications of SSPDs for photon counting in quantum optics and light detection and ranging (LIDAR) will be outlined.
The chapter reviews the main aspects of the physics of operation and performance of superconducting single-photon detectors (SSPDs) based on, mostly NbN, nanostripe meander-type structures and operated well below the superconductor transition temperature.We present theoreticalmodels developed to describe the photoresponse of superconducting nanostripes, as well as discuss mechanisms of SSPD generation of both photon-detection signals and dark counts. We also outline a standard SSPD fabrication process and discuss basic experimental techniques of SSPD characterization, focusing on the demonstration of its single-photon sensitivity and detection efficiency, as well as on measurements of the timing jitter. Finally, we give an outlook of future research directions and a quick overview of the vast area of SSPD applications.
We present a new type of a quantum detector, namely, the superconducting single-photon detector (SSPD), and demonstrate that it can be implemented in various single-photon counting applications, ranging from the visible light to near-infrared telecommunication wavelengths. We describe the physics of the photoresponse of a superconducting nanostripe to a flux of single optical photons and present the operation principle of SSPDs, stressing that, currently, they significantly outperform any competing, research or commercial devices in terms of their quantum efficiency, counting rate, jitter, and unwanted dark counts. SSPDs integrated with a cryogenic HEMT read-out circuit can provide some level of both the energy and number resolution of an unknown incident photon flux, making them uniquely suitable for various photon sensing applications.
Superconducting nanowire single photon detectors (SNSPD) offer excellent performance for infrared single photon detection, combining high efficiency, low timing jitter, low dark count rates and high photon counting rates. Promising application areas for SNSPDs include quantum key distribution, space-to-ground communications and single photon remote sensing [1]. SNSPDs are typically made with ultrathin niobium nitride (NbN) films with thickness 4 nm and a superconducting transition temperature above 9 K. NbN offers high performance in the near infrared but their sensitivity drops at wavelengths beyond 2 um. There is growing interest in potential photon counting applications in the mid infrared domain (for example remote sensing of greenhouse gases in the atmosphere [2]). One way to overcome the wavelength limit in NbN SNSPDs is to use films with a lower superconducting energy gap [3]. Here we report on the study of SNSPDs fabricated with thin films of titanium nitride (TiN). We compare TiN films deposited by atomic layer deposition (ALD) and by magnetron sputtering. The TiN films range in thickness from 5 to 60 nm, with superconducting transition temperatures from ~1 K to 3.5 K. We have analyzed the films via transmission electron microscopy and variable angle spectroscopic ellipsometry. We characterize TiN SNSPDs performance from near to mid-infrared at wavelengths (1-4 um) with fast optical parametric oscillator (OPO) source. We compare the performance of TiN SNSPDs to devices based on other lower gap materials: MoSi, NbTiN, WSi. [1] Natarajan et al Superconductor Science and Technology 25 063001 (2012) [2] Abshire et al Laser Applications to Chemical, Security and Environmental Analysis, (Optical Society of America, 2008) paper LMA4 [3] Verma et al Applied Physics Letters 105 022602 (2014)
We fabricated superconducting nanowire single-photon detectors (SNSPDs) made of NbTiN and NbN thin films in the same fabrication batch. Various parameters, such as critical temperature, resistivity, switching current, and kinetic inductance, were compared between the two types of SNSPDs. These data indicate that NbTiN SNSPD surpasses NbN SNSPD in many aspects, including a shorter recovery time due to smaller kinetic inductance, a lower timing jitter due to higher switching current, and better uniformity. Based on the measurement of 28 out of 121 NbTiN SNSPDs on a 2-in Si wafer, 71% of detectors show a system detection efficiency of over 50% at a dark count rate of 100 Hz, with the maximum efficiency being 77.5%.
We report on our progress in research and development of ultrafast superconducting single-photon detectors (SSPDs) based on ultrathin NbN nanostructures. Our SSPDs were made of the 4-nm-thick NbN films with Tc ~11 K, patterned as meander-shaped, 100-nm-wide strips, and covering an area of 10×10 μm2. The detectors exploit a combined detection mechanism, where upon a single-photon absorption, a hotspot of excited electrons and redistribution of the biasing supercurrent, jointly produce a picosecond voltage transient signal across the superconducting nanostripe. The SSPDs are typically operated at 4.2 K, but their sensitivity in the infrared radiation range can be significantly improved by lowering the operating temperature from 4.2 K to 2 K. When operated at 2 K, the SSPD quantum efficiency (QE) for visible light photons reaches 30-40%, which is the saturation value limited by the optical absorption of our 4-nm-thick NbN film. With the wavelength increase of the incident photons,the QE of SSPDs decreases significantly, but even at the wavelength of 6 μm, the detector is able to count single photons and exhibits QE of about 10-2 %. The dark (false) count rate at 2 K is as low as 2x10-4 s,-1 which makes our detector essentially a background-limited sensor. The very low dark-count rate results in a noise equivalent power (NEP) below 10-18 WHz-1/2 for the mid-infrared range (6 μm). Further improvement of the SSPD performance in the mid-infrared range can be obtained by substituting NbN for another, lower-Tc materials with a narrow superconducting gap and low quasiparticles diffusivity. The use of such superconductors should shift the cutoff wavelength below 10 μm.