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Bulletin of the American Physical Society

Laser writing with a solid immersion lens: towards optically coherent nitrogen-vacancy centers in microstructured diamond

Viktoria Yurgens, Josh A. Zuber, Sigurd Flågan, Marta De Luca, Brendan Shields, Tomasz Jakubczyk, Ilaria Zardo, Patrick Maletinsky, Richard John Warburton

Published Mar 18, 2021• 0 citations
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The negatively charged nitrogen-vacancy (NV) center in diamond is among the most promising solid-state systems implementations of a quantum bit. However, integration of the NV center into any efficient photonic environment requires microstructuring the diamond at below-micrometer scale. Preserving the low NV zero-phonon line inhomogeneous broadening during this process is a major challenge with standard NV creation methods. This issue severely limits practical applications of NV centers. Initial studies on pulsed-laser assisted creation of NVs yielded promising results by creating NVs with low inhomogeneous broadening at desired spatial locations in diamond [1]. Crucially, the lattice damage resulting from implantation of energetic ions was avoided. However, the method relied on a narrow window of parameters for successful writing. We widen this window by using a solid immersion lens (SIL), which facilitates laser writing over a broad range of pulse energies and allows for vacancy formation close to a diamond surface without inducing surface graphitization. We operate in the previously unexplored regime where lattice vacancies are created following tunneling breakdown rather than multiphoton ionization [2]. We present NV arrays that have been created between 1 and 40 µm from a diamond surface, all presenting optical linewidth distributions with means as low as 61.0±22.8 MHz [2], including spectral diffusion induced by off-resonant repump for charge stabilization. This emphasizes the exceptionally low charge-noise environment of laser-written NVs. Such high-quality NV centers are excellent candidates for practical applications employing two-photon quantum interference with separate NV centers. Finally, we propose a model for disentangling power broadening from inhomogeneous broadening in the NV zero-phonon line optical linewidth [2]. [1] Y.-C. Chen, P. S. Salter, S. Knauer, … and J. M. Smith, Nat. Photonics 11, 77 (2017). [2] V. Yurgens, J.A Zuber, S. Flågan, M. De Luca, B.J. Shields, I. Zardo, P. Maletinsky, R.J. Warburton, and T. Jakubczyk, ACS Photonics 8, 1726–1734 (2021)

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Optics with Nitrogen Vacancy Centers in Diamond

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Bulletin of the American Physical Society•Jun 15, 2011•0 citations
High Resolution Image Download MS PowerPoint Slide We report on pulsed-laser-induced generation of nitrogen-vacancy (NV) centers in diamond facilitated by a solid-immersion lens (SIL). The SIL enables laser writing at energies as low as 5.8 nJ per pulse and allows vacancies to be formed close to a diamond surface without inducing surface graphitization. We operate in the previously unexplored regime, where lattice vacancies are created following tunneling breakdown rather than multiphoton ionization. We present three samples in which NV center arrays were laser-written at distances between ∼1 and 40 μm from a diamond surface, all presenting narrow distributions of optical linewidths with means between 62.1 and 74.5 MHz. The linewidths include the effect of long-term spectral diffusion induced by a 532 nm repump laser for charge-state stabilization, thereby emphasizing the particularly low-charge-noise environment of the created color centers. Such high-quality NV centers are excellent candidates for practical applications employing two-photon quantum interference with separate NV centers. Finally, we propose a model for disentangling power broadening from inhomogeneous broadening in the NV center optical linewidth.
The negatively charged nitrogen-vacancy (NV) center in diamond is among the most promising solid-state systems implementations of a quantum bit. However, integration of the NV center into any efficient photonic environment requires microstructuring the diamond at below-micrometer scale. Preserving the low NV zero-phonon line inhomogeneous broadening during this process is a major challenge with standard NV creation methods. This issue severely limits practical applications of NV centers. Initial studies on pulsed-laser assisted creation of NVs yielded promising results by creating NVs with low inhomogeneous broadening at desired spatial locations in diamond [1]. Crucially, the lattice damage resulting from implantation of energetic ions was avoided. However, the method relied on a narrow window of parameters for successful writing. We widen this window by using a solid immersion lens (SIL), which facilitates laser writing over a broad range of pulse energies and allows for vacancy formation close to a diamond surface without inducing surface graphitization. We operate in the previously unexplored regime where lattice vacancies are created following tunneling breakdown rather than multiphoton ionization [2]. We present NV arrays that have been created between 1 and 40 µm from a diamond surface, all presenting optical linewidth distributions with means as low as 61.0±22.8 MHz [2], including spectral diffusion induced by off-resonant repump for charge stabilization. This emphasizes the exceptionally low charge-noise environment of laser-written NVs. Such high-quality NV centers are excellent candidates for practical applications employing two-photon quantum interference with separate NV centers. Finally, we propose a model for disentangling power broadening from inhomogeneous broadening in the NV zero-phonon line optical linewidth [2]. [1] Y.-C. Chen, P. S. Salter, S. Knauer, … and J. M. Smith, Nat. Photonics 11, 77 (2017). [2] V. Yurgens, J.A Zuber, S. Flågan, M. De Luca, B.J. Shields, I. Zardo, P. Maletinsky, R.J. Warburton, and T. Jakubczyk, ACS Photonics 8, 1726–1734 (2021)