High volume manufacturing of silicon spin qubits

Jun Yoneda

Thomas Van Caekenberghe, Paul Steinacker, Bart Raes +31 more

The realization of large-scale silicon quantum processors requires spin qubits compatible with advanced semiconductor manufacturing technologies, demanding lithographic processes that combine nanometer-scale precision with exceptional uniformity. Although the highest-performing silicon spin qubits demonstrated to date have relied on electron-beam (e-beam) lithography, its serial exposure process limits reproducibility studies and wafer-scale fabrication. Here, we demonstrate high-performance silicon metal-oxide-semiconductor (SiMOS) spin qubits fabricated using extreme-ultraviolet (EUV) lithography in a 300 mm semiconductor pilot line. We report wafer-scale quantum-dot uniformity metrics, including 100 % room-temperature gate-to-gate leakage yield and sub-nanometer control of critical gate dimensions. We characterize four double-dot systems realized in two triple-quantum-dot devices. Gate set tomography (GST) reveals consistently high fidelities across all four systems, with values up to 99.8 % for SPAM, 99.9 % for single-qubit gates, and 99.1 % for two-qubit gates. The devices exhibit highly reproducible exchange turn-on characteristics of 10-13 dec/V, indicating high fabrication uniformity enabled by EUV patterning. These results establish EUV lithography as a viable manufacturing technology for quantum processors based on high-fidelity SiMOS spin qubits.

Erik R. Hosler

Quantum computing is one of the grand challenges of the 21st century and promises to transform almost every industry. As quantum computing technology exits the academic research phase into manufacturing, the goal is not to build single, unique qubits, but millions of interconnected, identical qubits capable of performing fully error corrected, general purpose calculations. Photon-based qubits offer a path to such a general-purpose machine by leveraging the mature silicon photonics high-volume manufacturing ecosystem. Creating quantum devices from silicon photonics components requires patterning innovation to bring leading-edge nanolithography to near macroscopic scale, a unique challenge for an industry where the future relies on progressive device shrink.

Jason D. Chadwick, Willers Yang, Joshua Viszlai +1 more

Spin qubits in silicon quantum dot arrays are a promising quantum computation platform for long-term scalability due to their small qubit footprint and compatibility with advanced semiconductor manufacturing. However, spin qubit devices face a key architectural bottleneck: the large physical footprint of readout components relative to qubits prevents a dense layout where all qubits can be measured simultaneously, complicating the implementation of quantum error correction. This challenge is offset by the platform's unique rapid shuttling capability, which can be used to transport qubits to distant readout ports. In this work, we explore the design constraints and capabilities of spin qubits in silicon and propose the SNAQ (Shuttling-capable Narrow Array of spin Qubits) surface code architecture, which relaxes the 1:1 readout-to-qubit assumption by leveraging spin shuttling to time-multiplex ancilla qubit initialization and readout. Our analysis shows that, given sufficiently high (experimentally demonstrated) qubit coherence times, SNAQ delivers an orders-of-magnitude reduction in chip area per logical qubit. Additionally, by using a denser grid of physical qubits, SNAQ enables fast transversal logic for short-distance logical operations, achieving over 10x improvement in local logical clock speed while still supporting global operations via lattice surgery. This translates to a 3.2-5.7x improvement in key Adder and Lookup fault-tolerant subroutines. Our work pinpoints critical hardware metrics and provides a compelling path toward high-performance fault-tolerant computation on near-term-manufacturable spin qubit arrays.

Andrew S. Dzurak

Anasua Chatterjee, Paul Stevenson, Silvano De Franceschi +3 more