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Softwaretechnik-Trends

The Resistive Transition of an Aluminium Hot Electron Bolometer Mixer with Normal Metal Cooling Banks

A. H. Verbruggen, T. M. Klapwijk, Wolfgang Belzig, J. R. Gao

Published Dec 1, 2001• 3 citations
OpenAlex

Abstract

We perform a theoretical analysis based on the superconducting proximity-effect model for the resistive transition of an aluminium superconducting hot electron bolometer mixer when the cooling banks are in the normal state. We compare our calculated result with a recently reported measurement. Our calculation qualitatively reproduces the observed feature in which the resistance drops quickly around Tc with decreasing temperature, but saturates at a value roughly being one half of the normal state resistance. It also opens the question about which type of cooling banks (normal or superconductor) is favourably for low noise performance.

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Resistive transition of niobium superconducting hot-electron bolometer mixers

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We present a model for the description of the resistive transition in hot-electron bolometer mixers. We show that the transition is a property of a superconducting microbridge connected to normal conducting cooling pads. Using the concepts of the superconducting proximity effect, charge-imbalance generation, and Andreev reflection, we have calculated the resistance versus temperature of the device and demonstrate its dependence on the length of the microbridge, both theoretically and experimentally. The analysis reopens the question of the relationship between the resistive transition and the situation in which the device is optimally operated as a heterodyne mixer.

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During the last few years significant progress has been made in the field of hot-electron bolometer (HEB) mixers. It has been possible to combine a low noise temperature and high stability of phonon-cooled HEBs with an ultrawide gain bandwidth of the diffusion-cooled HEBs in a single device and thus create HEB mixers which offer a noise temperature of 5hν/kB across a 7-GHz band. The essential ingredient of this success is the in situ fabrication technology, where the deposition of the gold contacts follows the deposition of the superconducting film without vacuum breaking. Despite the evident technological breakthrough, the details of certain physical processes occurring both at the superconductor-normal metal (SN) interface and in the superconducting bridge are not completely understood in terms of their influence on the mixer performance. In particular, it is still unclear to what extent the properties of the SN interface are affected by the deposition temperatures of the superconductor and the normal metal, and also by the time interval elapsed between the deposition processes. We will gain some insight into the matter by studying the behaviour of the superconducting transition as a function of the deposition temperatures and time delay. A better understanding of this issue will allow us to move forward the HEB mixer technology towards new applications.

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In this paper we study the effect of NbN-Au contact pads on the performance of a superconducting NbN hot electron bolometer (HEB) mixer. The receiver noise temperature (Trec) and IF noise bandwidth (BN) at a LO frequency of 1.3 THz are measured at different bath temperatures between 3.3 K and 8.5 K. The measured Trec and BN of the superconducting HEB mixer are nearly constant for Tbath/Tc less than 0.7, and increase quickly with the further increase of Tbath. Measurement results demonstrate that the NbN-Au contact pads in superconducting state nearly have no influence on Trec and Bn, but the contact pads in resistive state make Trec and BN increase quickly with Tbath, indicated by the slope change of current-voltage curves and IF output power peak.

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Reduced Tc Niobium superconducting HEB mixers

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A reduction in the mixer noise is expected when using superconductors with a lower transition temperature (Tc) since the thermal noise components of the mixer noise should scale with Tc. Also, the local oscillator (LO) power required for a diffusion-cooled device should decrease as Tc when Tbath<<Tc. We previously studied mixing in aluminum based hot-electron bolometers (HEBs) at microwave frequencies (~30 GHz), and observed a significant improvement in noise performance, and a reduction in LO power as predicted. However, the bias voltage range over which good mixer performance was observed was ~ 5-10 μV. These devices are thus susceptible to saturation effects, in particular output saturation. In the present work, we have investigated Nb HEBs whose Tc is lowered by applying a magnetic field. The goal is to study a case intermediate between Nb and Al, and hopefully to find properties that will allow use in practical receivers. A 15 kOe perpendicular magnetic field was applied to a Nb HEB (L=0.16 μm, W=0.08 μm, RN=90Ω) to reduce Tc from 5.2 K to 2.4 K. The mixer noise, as inferred from the output noise and the conversion efficiency, decreased from 390 K, DSB to 171 K, DSB. The LO power required for near optimum mixer conversion efficiency (ηmixer = 9 dB in this device) was 8nW in zero field, and ~ 2 nW when Tc was reduced to 2.4K. Tbath=0.22K. The conversion bandwidth was previously measured to be 2.4 GHz and the same bandwidth was observed in the presence of a magnetic field. By lowering Tc, the voltage range over which good mixing was observed also decreased. However, even with Tc reduced to 2.4 K, the conversion efficiency dropped by 3dB from its maximum value only when the bias voltage was changed by ~ 90 μV. Saturation effects should thus be much less of a concern in these devices than in Al HEBs. In situations where the application of a large magnetic field is not feasible, we suggest using Ta based HEBs. Ta HEBs should have Tc ~ 3-3.5K and material properties very similar to Nb.

•Feb 14, 2001•0 citations

Electron cooling in a normal-metal hot-electron bolometer

Michael A. Tarasov, L. S. Kuzmin, Mikhail Yu. Fominskii +2 more

Normal-metal hot-electron bolometers, each of which contains two superconductor-insulator-normal metal (SIN) junctions for electron cooling and two SIN junctions for temperature measurements, were fabricated and experimentally studied. The electron cooling by SIN junctions is an analog of the Peltier effect and allows one to reduce the effective electron temperature of a bolometer. The electron temperature was determined from the ratio of the differential resistance to normal one for several values of a constant bias. At a phonon temperature of 250 mK, the resistance ratio at zero bias reached 1000, which was close to the theoretical value for an ideal SIN junction. A decrease in the electron temperature from 250 to 90 mK was obtained.

Journal of Experimental and Theoretical Physics Letters•Dec 1, 2003•8 citations
We perform a theoretical analysis based on the superconducting proximity-effect model for the resistive transition of an aluminium superconducting hot electron bolometer mixer when the cooling banks are in the normal state. We compare our calculated result with a recently reported measurement. Our calculation qualitatively reproduces the observed feature in which the resistance drops quickly around Tc with decreasing temperature, but saturates at a value roughly being one half of the normal state resistance. It also opens the question about which type of cooling banks (normal or superconductor) is favourably for low noise performance.
We present a model for the description of the resistive transition in hot-electron bolometer mixers. We show that the transition is a property of a superconducting microbridge connected to normal conducting cooling pads. Using the concepts of the superconducting proximity effect, charge-imbalance generation, and Andreev reflection, we have calculated the resistance versus temperature of the device and demonstrate its dependence on the length of the microbridge, both theoretically and experimentally. The analysis reopens the question of the relationship between the resistive transition and the situation in which the device is optimally operated as a heterodyne mixer.
During the last few years significant progress has been made in the field of hot-electron bolometer (HEB) mixers. It has been possible to combine a low noise temperature and high stability of phonon-cooled HEBs with an ultrawide gain bandwidth of the diffusion-cooled HEBs in a single device and thus create HEB mixers which offer a noise temperature of 5hν/kB across a 7-GHz band. The essential ingredient of this success is the in situ fabrication technology, where the deposition of the gold contacts follows the deposition of the superconducting film without vacuum breaking. Despite the evident technological breakthrough, the details of certain physical processes occurring both at the superconductor-normal metal (SN) interface and in the superconducting bridge are not completely understood in terms of their influence on the mixer performance. In particular, it is still unclear to what extent the properties of the SN interface are affected by the deposition temperatures of the superconductor and the normal metal, and also by the time interval elapsed between the deposition processes. We will gain some insight into the matter by studying the behaviour of the superconducting transition as a function of the deposition temperatures and time delay. A better understanding of this issue will allow us to move forward the HEB mixer technology towards new applications.
A theoretical analysis for the noise temperature of hot—electron superconducting mixer has been presented. The contributions of both Johnson noise and electron temperature fluctuations have been evaluated. A set of criteria ensuring low noise performance of the mixer has been stated and a simple analytic expression for the noise temperature of the mixer device has been suggested. It has been shown that an improvement of the mixer sensitivity does not necessarily follow by a decrease of the bandwidth. An SSB noise temperature limit due to the intrinsic noise mechanisms has been estimated to be as low as 40-90 K for a mixer device made from Nb or NbN thin film. Furthermore, the conversion gain bandwidth can be as wide as is allowed by the intrinsic electron temperature relaxation time if an appropriate choice of the mixer resistance has been made. The intrinsic mixer noise bandwidth is of 3 GHz for Nb device and of 5 GHz for NbN device. An additional improvement of the theory has been made when a distinction between the impedance measured at high intermediate frequency (larger than the mixer bandwidth) and the mixer ohmic resistance has been taken into account. Recently obtained experimental data on Nb and NbN bolometer mixer devices are viewed in connection with the theoretical predictions. The noise temperature limit has also been specified for the mixer device where an outdiffusion cooling mechanism rather than the electron—phonon energy relaxation determines the mixer bandwidth. A consideration of the noise performance of a bolometer mixer made from YBaCuO film utilizing a hot—electron effect has been done.
In this paper we study the effect of NbN-Au contact pads on the performance of a superconducting NbN hot electron bolometer (HEB) mixer. The receiver noise temperature (Trec) and IF noise bandwidth (BN) at a LO frequency of 1.3 THz are measured at different bath temperatures between 3.3 K and 8.5 K. The measured Trec and BN of the superconducting HEB mixer are nearly constant for Tbath/Tc less than 0.7, and increase quickly with the further increase of Tbath. Measurement results demonstrate that the NbN-Au contact pads in superconducting state nearly have no influence on Trec and Bn, but the contact pads in resistive state make Trec and BN increase quickly with Tbath, indicated by the slope change of current-voltage curves and IF output power peak.
A reduction in the mixer noise is expected when using superconductors with a lower transition temperature (Tc) since the thermal noise components of the mixer noise should scale with Tc. Also, the local oscillator (LO) power required for a diffusion-cooled device should decrease as Tc when Tbath<<Tc. We previously studied mixing in aluminum based hot-electron bolometers (HEBs) at microwave frequencies (~30 GHz), and observed a significant improvement in noise performance, and a reduction in LO power as predicted. However, the bias voltage range over which good mixer performance was observed was ~ 5-10 μV. These devices are thus susceptible to saturation effects, in particular output saturation. In the present work, we have investigated Nb HEBs whose Tc is lowered by applying a magnetic field. The goal is to study a case intermediate between Nb and Al, and hopefully to find properties that will allow use in practical receivers. A 15 kOe perpendicular magnetic field was applied to a Nb HEB (L=0.16 μm, W=0.08 μm, RN=90Ω) to reduce Tc from 5.2 K to 2.4 K. The mixer noise, as inferred from the output noise and the conversion efficiency, decreased from 390 K, DSB to 171 K, DSB. The LO power required for near optimum mixer conversion efficiency (ηmixer = 9 dB in this device) was 8nW in zero field, and ~ 2 nW when Tc was reduced to 2.4K. Tbath=0.22K. The conversion bandwidth was previously measured to be 2.4 GHz and the same bandwidth was observed in the presence of a magnetic field. By lowering Tc, the voltage range over which good mixing was observed also decreased. However, even with Tc reduced to 2.4 K, the conversion efficiency dropped by 3dB from its maximum value only when the bias voltage was changed by ~ 90 μV. Saturation effects should thus be much less of a concern in these devices than in Al HEBs. In situations where the application of a large magnetic field is not feasible, we suggest using Ta based HEBs. Ta HEBs should have Tc ~ 3-3.5K and material properties very similar to Nb.
Normal-metal hot-electron bolometers, each of which contains two superconductor-insulator-normal metal (SIN) junctions for electron cooling and two SIN junctions for temperature measurements, were fabricated and experimentally studied. The electron cooling by SIN junctions is an analog of the Peltier effect and allows one to reduce the effective electron temperature of a bolometer. The electron temperature was determined from the ratio of the differential resistance to normal one for several values of a constant bias. At a phonon temperature of 250 mK, the resistance ratio at zero bias reached 1000, which was close to the theoretical value for an ideal SIN junction. A decrease in the electron temperature from 250 to 90 mK was obtained.