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The dc SQUID as a tuned radiofrequency amplifier

Claude Hilbert, John L. Clarke

Published Sep 1, 1984• 0 citations
OpenAlex

Abstract

The design criteria for a tuned radiofrequency amplifier based on a de SQUID are briefly discussed.A practical a~plifier involving a planar de SQUID with a 4-1/4-turn spiral input coil and operated at 4.2K had a gain or 18.6 ± 0.5 dB and a noise temperature or 1.7 ± 0.5K at 93 MHz.These results are in satisfactory agreement with pr~dicted values.

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dc SQUID as a tuned radiofrequency amplifier

Claude Hilbert, John L. Clarke

The design criteria for a tuned radiofrequency amplifier based on a dc SQUID are briefly discussed. A practical amplifier involving a planar dc SQUID with a 4-1/4-turn spiral input coil and operated at 4.2K had a gain of 18.6 ± 0.5 dB and a noise temperature of 1.7± 0.5K at 93 MHz. These results are in satisfactory agreement with predicted values.

IEEE Transactions on Magnetics•Mar 1, 1985•9 citations

Properties of a high-T/sub c/ dc SQUID radiofrequency amplifier

A.S. Kalaboukhov, Michael A. Tarasov, A. Lohmus +2 more

We present an experimental investigation of a radiofrequency amplifier based on a bicrystal high-T/sub c/ dc SQUID designed for the frequency range 500-3000 MHz. The SQUID input coil comprises only one layer of a normal metal forming open-ended microstrip line. Both dc and microwave properties were investigated and analyzed. Maximum power gain was found to be 16 dB at 520 MHz for a SQUID with 8 turn input coil.

IEEE Transactions on Applied Superconductivity•Jan 1, 2003•1 citation

Radiofrequency amplifier based on a dc superconducting quantum interference device

Claude Hilbert

A low noise radiofrequency amplifier (10), using a dc SQUID (superconducting quantum interference device) as the input amplifying element. The dc SQUID (11) and an input coil (12) are maintained at superconductivity temperatures in a superconducting shield (13), with the input coil (12) inductively coupled to the superconducting ring (17) of the dc SQUID (11). A radiofrequency signal from outside the shield (13) is applied to the input coil (12), and an amplified radiofrequency signal is developed across the dc SQUID ring (17) and transmitted to exteriorly of the shield (13). A power gain of 19.5.+-.0.5 dB has been achieved with a noise temperature of 1.0.+-.0.4 K. at a frequency of 100 MHz.

•Jan 23, 2023•1 citation

DC SQUID RF amplifiers

Michael A. Tarasov, Victor Y. Belitsky, G.V. Prokopenko

The noise and signal parameters of several types of RF amplifiers based on different SQUIDs with integrated and hybrid input coils were studied. A new type of multiloop DC SQUID with an integrated input coil and extremely low stray capacitances was designed. The inductance of a four-loop SQUID was 100 pH, the input coil inductance 1.3 nH, and mutual inductance 300 pH. The tuned integrated four-loop amplifier at 420 MHz had a noise temperature lower 0.5 K and a power gain of nearly 20 dB in a 60-MHz bandwidth. For the noise calibration of such amplifiers, SIS junctions were used as a shot noise source, or a cooled attenuator and a room temperature semiconductor noise source were used.>

IEEE Transactions on Applied Superconductivity•Jun 1, 1992•15 citations

Processing of DC SQUIDs for radiofrequency amplification

R. Chicault, M. C. Cyrille, Y. Berthier +4 more

The goal of this studies is to use dc Squids as low noise radiofrequency amplifier (Tn ≈1K) in the frequency range 1-150 Mhz and to integrate them in NMR probe. DC Squids have been built using planar technology and with two types of superconducting materials : low Tc(Nb) and High Tc(YBa2Cu3O7). Contrary to the traditional set up used in magnetometry (flux locked loop) the dc Squid is here fluxed biased near Φz=(2n+1)Φo/4 and no flux locked loop is connected. Small variations of flux (Φs<<Φo) introduced from signal source via the input coil are amplified following the transfer characteristic VΦ=dV/dΦ. The low Tc devices are set up to now the best, concerning the reproducibility and the qualities of the Josephson Junctions obtained with a three layer process Nb/Al-Al2O3/Nb. Such junctions have been realized following the so called SNOP process, without anodization. The main characteristic obtained at 4.2K are RJ/RN=10, 2Δ≈2.8 meV and a Josephson current density J≈103 A/cm2. The high Tc devices have been built with bi-epitaxial YBa2Cu3O7 junctions and with a 30x30µm2 area loop. I(V) and V(Φ) characteristics curves obtained are promizing for applications as RF detection in the temperature range : 4-77K. Modelization studies are currently in progress for the optimization of those devices (low Tc and high Tc) as RF amplifiers (minimization of parasitic capacitance between the input coil and the Squid loop) in order to increase their upper frequency limit.\n* This work is partially supported by Ultimatech (CNRS), by the "région Rhône-Alpes" and E.E.C. "HTSC-GBJ" programs n°7100.

Journal de Physique IV (Proceedings)•Jun 1, 1994•2 citations

Integrated rf amplifier based on dc SQUID

Michael A. Tarasov, G.V. Prokopenko, V. P. Koshelets +2 more

Integrated radio-frequency amplifiers comprising a 4-loop dc SQUID, seriesly connected input coil turns, a resonant capacitor parallel to the input coil, series capacitors at the input and output ports and bias resistors have been designed, fabricated and experimentally studied. A multiloop dc SQUID with parallel loops and seriesly connected single-turn input coils placed inside each loop and integration with the input resonant matching circuit elements and with elements of dc bias circuit allows one to increase signal frequency and reduce the influence of external noise. The amplifiers with three different capacitors have resonant frequencies 560, 656, 758 MHz and bandwidth about 50 MHz. The noise temperature of such amplifiers below 1.5 K has been measured using cold attenuator and room-temperature noise sources. The layout comprising three pairs of such amplifiers placed on the same 15/spl times/24 mm substrate was designed to increase the bandwidth over the bandwidth of the individual amplifiers.>

IEEE Transactions on Applied Superconductivity•Jun 1, 1995•23 citations
The design criteria for a tuned radiofrequency amplifier based on a de SQUID are briefly discussed.A practical aplifier involving a planar de SQUID with a 4-1/4-turn spiral input coil and operated at 4.2K had a gain or 18.6 ± 0.5 dB and a noise temperature or 1.7 ± 0.5K at 93 MHz.These results are in satisfactory agreement with prdicted values.
A low noise radiofrequency amplifier (10), using a dc SQUID (superconducting quantum interference device) as the input amplifying element. The dc SQUID (11) and an input coil (12) are maintained at superconductivity temperatures in a superconducting shield (13), with the input coil (12) inductively coupled to the superconducting ring (17) of the dc SQUID (11). A radiofrequency signal from outside the shield (13) is applied to the input coil (12), and an amplified radiofrequency signal is developed across the dc SQUID ring (17) and transmitted to exteriorly of the shield (13). A power gain of 19.5.+-.0.5 dB has been achieved with a noise temperature of 1.0.+-.0.4 K. at a frequency of 100 MHz.
The noise and signal parameters of several types of RF amplifiers based on different SQUIDs with integrated and hybrid input coils were studied. A new type of multiloop DC SQUID with an integrated input coil and extremely low stray capacitances was designed. The inductance of a four-loop SQUID was 100 pH, the input coil inductance 1.3 nH, and mutual inductance 300 pH. The tuned integrated four-loop amplifier at 420 MHz had a noise temperature lower 0.5 K and a power gain of nearly 20 dB in a 60-MHz bandwidth. For the noise calibration of such amplifiers, SIS junctions were used as a shot noise source, or a cooled attenuator and a room temperature semiconductor noise source were used.>
The goal of this studies is to use dc Squids as low noise radiofrequency amplifier (Tn ≈1K) in the frequency range 1-150 Mhz and to integrate them in NMR probe. DC Squids have been built using planar technology and with two types of superconducting materials : low Tc(Nb) and High Tc(YBa2Cu3O7). Contrary to the traditional set up used in magnetometry (flux locked loop) the dc Squid is here fluxed biased near Φz=(2n+1)Φo/4 and no flux locked loop is connected. Small variations of flux (Φs<<Φo) introduced from signal source via the input coil are amplified following the transfer characteristic VΦ=dV/dΦ. The low Tc devices are set up to now the best, concerning the reproducibility and the qualities of the Josephson Junctions obtained with a three layer process Nb/Al-Al2O3/Nb. Such junctions have been realized following the so called SNOP process, without anodization. The main characteristic obtained at 4.2K are RJ/RN=10, 2Δ≈2.8 meV and a Josephson current density J≈103 A/cm2. The high Tc devices have been built with bi-epitaxial YBa2Cu3O7 junctions and with a 30x30µm2 area loop. I(V) and V(Φ) characteristics curves obtained are promizing for applications as RF detection in the temperature range : 4-77K. Modelization studies are currently in progress for the optimization of those devices (low Tc and high Tc) as RF amplifiers (minimization of parasitic capacitance between the input coil and the Squid loop) in order to increase their upper frequency limit.\n* This work is partially supported by Ultimatech (CNRS), by the "région Rhône-Alpes" and E.E.C. "HTSC-GBJ" programs n°7100.
Integrated radio-frequency amplifiers comprising a 4-loop dc SQUID, seriesly connected input coil turns, a resonant capacitor parallel to the input coil, series capacitors at the input and output ports and bias resistors have been designed, fabricated and experimentally studied. A multiloop dc SQUID with parallel loops and seriesly connected single-turn input coils placed inside each loop and integration with the input resonant matching circuit elements and with elements of dc bias circuit allows one to increase signal frequency and reduce the influence of external noise. The amplifiers with three different capacitors have resonant frequencies 560, 656, 758 MHz and bandwidth about 50 MHz. The noise temperature of such amplifiers below 1.5 K has been measured using cold attenuator and room-temperature noise sources. The layout comprising three pairs of such amplifiers placed on the same 15/spl times/24 mm substrate was designed to increase the bandwidth over the bandwidth of the individual amplifiers.>