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Optics Express

On-chip photon-pair generation in a silica microtoroidal cavity

Yosuke Hashimoto, Akihisa Goban, Yuki Hirabayashi, Yuta Kobayashi, Tomohiro Araki, Takao Aoki

Published Jan 13, 2021• 6 citations
Publisher

Abstract

Microcavities with high Q factor and small mode volume have the potential to be efficient and compact sources of photon pairs. Here, we demonstrate on-chip photon-pair generation by spontaneous four-wave mixing in a silica microtoroidal cavity and obtain a coincidence-to-accidental ratio of 7.4 ± 0.1 with a pump power of 46 µW. The heralded photons also exhibit antibunching characterized by autocorrelation function values of g c ( 2 ) ( 0 ) = 0.57 ± 0.03 < 1 . Comparing with a scaling model, the main noise source is found to be spontaneous Raman scattering in the cavity. This work opens a new possible means for realizing integrated nonclassical photon sources based on silica photonic circuits toward scalable quantum technologies.

DOI
10.1364/oe.414037

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Microcavities with high Q factor and small mode volume have the potential to be efficient and compact sources of photon pairs. Here, we demonstrate on-chip photon-pair generation by spontaneous four-wave mixing in a silica microtoroidal cavity and obtain a coincidence-to-accidental ratio of 7.4 ± 0.1 with a pump power of 46 µW. The heralded photons also exhibit antibunching characterized by autocorrelation function values of g c ( 2 ) ( 0 ) = 0.57 ± 0.03 < 1 . Comparing with a scaling model, the main noise source is found to be spontaneous Raman scattering in the cavity. This work opens a new possible means for realizing integrated nonclassical photon sources based on silica photonic circuits toward scalable quantum technologies.
We demonstrate a very high coincidence-to-accidental ratio of 673 using continuous-wave photon-pair generation in a silicon strip waveguide through spontaneous four-wave mixing. This result is obtained by employing on-chip photonic-crystal-based grating couplers for both low-loss fiber-to-chip coupling and on-chip suppression of generated spontaneous Raman scattering noise. We measure a minimum heralded second-order correlation of , demonstrating that our source operates in the single-photon regime with low noise.
Photon sources are fundamental components for any quantum photonic technology. The ability to generate high count-rate and low-noise correlated photon pairs via spontaneous parametric down-conversion using bulk crystals has been the cornerstone of modern quantum optics. However, future practical quantum technologies will require a scalable integration approach, and waveguide-based photon sources with high-count rate and low-noise characteristics will be an essential part of chip-based quantum technologies. Here, we demonstrate photon pair generation through spontaneous four-wave mixing in a silicon micro-ring resonator, reporting separately a maximum coincidence-to-accidental (CAR) ratio of 602 ± 37 (for a generation rate of 827kHz), and a maximum photon pair generation rate of 123 MHz ± 11 kHz (with a CAR value of 37). To overcome free-carrier related performance degradations we have investigated reverse biased p-i-n structures, demonstrating an improvement in the pair generation rate by a factor of up to 2 with negligible impact on CAR.
Integrated quantum photonics relies critically on the purity, scalability, integrability, and flexibility of a photon source to support diverse quantum functionalities on a single chip. Here we report a chip-scale photon-pair source on the silicon-on-insulator platform that utilizes dramatic cavity-enhanced four-wave mixing in a high-Q silicon microdisk resonator. The device is able to produce high-quality photon pairs at different wavelengths with a high spectral brightness of 6.24×10(7) pairs/s/mW(2)/GHz and photon-pair correlation with a coincidence-to-accidental ratio of 1386 ± 278 while pumped with a continuous-wave laser. The superior performance, together with the structural compactness and CMOS compatibility, opens up a great avenue towards quantum silicon photonics with capability of multi-channel parallel information processing for both integrated quantum computing and long-haul quantum communication.
Abstract The third-order nonlinearity of silicon gives rise to a spontaneous four-wave mixing process in which correlated photon pairs are generated. Sources based on this effect can be used for quantum computation and cryptography, and can in principle be integrated with standard CMOS fabrication technology and components. However, one of the major challenges is the on-chip demultiplexing of the photons, and in particular the filtering of the pump power, which is many orders of magnitude larger than that of the signal and idler photons. Here, we propose a photonic crystal coupled-cavity system designed so that the coupling of the pump mode to the output channel is strictly zero due to symmetry. We further analyze this effect in the presence of fabrication disorder and find that, even then, a pump suppression of close to 40 dB can be achieved in state-of-the-art systems. Due to the small mode volumes and high quality factors, our system is also expected to have a generation efficiency much higher than in standard micro-ring systems. Those two considerations make a strong case for the integration of our proposed design in future on-chip quantum technologies.
On-chip heralded single photon sources are of key importance in the development of chip-scale devices exploiting the quantum properties of light. Single photon states can be produced as single photons heralded from correlated photon pairs generated through spontaneous four wave mixing. On-chip heralded single photon sources based on spontaneous four wave mixing have been already demonstrated. However, the heralded and herald photons are usually generated with wavelengths very close to the pump one, limiting the pump rejection efficiency and the application to the mid infrared. Moreover, the common sources of heralded photons based on spontaneous four wave mixing require spectral post filtering to achieve high purity, limiting the brightness and the integration of these sources. A solution to these problems can be provided by intermodal four wave mixing. In this work, we demonstrate the generation of photon pairs through intermodal four wave mixing in silicon waveguides, measuring the coincidences between the idler at 1.281 μm and the signal at 1.952 μm. We then discuss the application of intermodal four wave mixing to on-chip heralded single photon sources.
Integrated quantum photonics leverages the on-chip generation of nonclassical states of light to realize key functionalities of quantum devices. Typically, the generation of such nonclassical states relies on whispering gallery mode resonators, such as integrated optical micro-rings, which enhance the efficiency of the underlying spontaneous nonlinear processes. While these kinds of resonators excel in maximizing either the temporal confinement or the spatial overlap between different resonant modes, they are usually associated with large mode volumes, imposing an intrinsic limitation on the efficiency and footprint of the device. Here, we engineer a source of time-energy entangled photon pairs based on a silicon photonic crystal cavity, implemented in a fully CMOS-compatible platform. In this device, resonantly enhanced spontaneous four-wave mixing converts pump photon pairs into signal/idler photon pairs under the energy-conserving condition in the telecommunication C-band. The design of the resonator is based on an effective bichromatic confinement potential, allowing it to achieve up to nine close-to-equally spaced modes in frequency, while preserving small mode volumes, and the whole chip, including grating couplers and access waveguides, is fabricated in a single run on a silicon-on-insulator platform. Besides demonstrating efficient photon pair generation, we also implement a Franson-type interference experiment, demonstrating entanglement between signal and idler photons with a Bell inequality violation exceeding five standard deviations. The high generation efficiency combined with the small device footprint in a CMOS-compatible integrated structure opens a pathway toward the implementation of compact quantum light sources in all-silicon photonic platforms.