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Acta Physica Sinica

All-optical diode in mid-infrared waveband based on self-phase modulation effect in silicon ring resonator

Zhang Xue-Zhi, Feng Ming, Zhang Xin-Zheng

Published Jan 1, 2013• 1 citation
Publisher

Abstract

Nonreciprocal transmission device is one of the fundamental elements in integrated optics, and mid-infrared is a widely used waveband in many areas, such as remote sensing or spectrum analysis. An all-optical diode based on self-phase modulation (SPM) effect is numerically demonstrated in mid-infrared waveband. The diode consists of a linear waveguide and double silicon ring resonators. The nonreciprocal transmission ratio can be more than 20 dB in a power range between 0.5 mW and 20 mW, while the transmission loss in forward direction is less than 10 dB. Moreover, the influences of linear absorption coefficient of ring resonators and the bi-stability effect on the performance of the diode are discussed.

DOI
10.7498/aps.62.024201

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Nonreciprocal transmission device is one of the fundamental elements in integrated optics, and mid-infrared is a widely used waveband in many areas, such as remote sensing or spectrum analysis. An all-optical diode based on self-phase modulation (SPM) effect is numerically demonstrated in mid-infrared waveband. The diode consists of a linear waveguide and double silicon ring resonators. The nonreciprocal transmission ratio can be more than 20 dB in a power range between 0.5 mW and 20 mW, while the transmission loss in forward direction is less than 10 dB. Moreover, the influences of linear absorption coefficient of ring resonators and the bi-stability effect on the performance of the diode are discussed.
Spontaneous symmetry breaking can occur in the powers of two optical modes coupled into a ring resonator, described by a pair of coupled Lorentzian equations, and featuring tunable self- and cross-phase modulation terms. Investigated is a wide variety of nonlinear materials by changing the ratio of the self- and cross-phase interaction coefficients. Static and dynamic effects range from the number and stability of stationary states to the onset and nature of oscillations. Minimal conditions to observe symmetry breaking are provided in terms of the ratio of the self- and cross-phase coefficients, detuning, and input power. Different ratios of the nonlinear coefficients also influence the dynamical regime, where they can induce or suppress bifurcations and oscillations. A generalized description on this kind is useful for the development of all-optical components, such as isolators and oscillators, constructed from a wide variety of optical media in ring resonators.
Usually, most optical diodes with high nonreciprocal transmission ratio were accompanied with high insertion loss. The diode made of the asymmetry cavity filled with two-level atoms can simultaneously possess high nonreciprocal transmission ratio and low insertion loss, because the cavity can lower insertion loss and the bistability of the atom can enhance nonreciprocal transmission ratio. However, such diodes can only operate in a very narrow frequency band. In this article we explore two methods to achieve efficient diodes with a wide frequency range. One is using mixed atomic gas instead of a single atom and the other is replacing single-mode cavity with passive white light cavities. By using the two methods, a wide band optical diode with high nonreciprocal transmission ratio and low insertion loss is provided. It will be beneficial for improving the performance of broadband photonic chips and photonic communication.
We present a detailed experimental study of the mitigation of two-photon absorption (TPA) in a silicon micro ring modulator. TPA induced free-carrier absorption results in interesting optoelectronic process in silicon ring resonators. In this work, we study the effect of optical and RF power on the spectral characteristics of a ring modulator. In particular, we report the evolution of optical bistability in the transmission spectrum with free carriers and thermally induced refractive index change.
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