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Design of a W-band Superconducting Kinetic Inductance Qubit (Kineticon)

Farzad Faramarzi, Peter K. Day, Jacob Glasby, Sasha Sypkens, Ralph V. Chamberlin, Mohammad Mirhosseini, Kevin E. Schmidt, Philip D. Mauskopf

Published Dec 15, 2020• 1 citation
OpenAlex

Abstract

Superconducting qubits are widely used in quantum computing research and industry. We describe a superconducting kinetic inductance qubit (Kineticon) operating at W-band frequencies with a nonlinear nanowire section that provides the anharmonicity required for two distinct quantum energy states. Operating the qubits at higher frequencies relaxes the dilution refrigerator temperature requirements for these devices and paves the path for multiplexing a large number of qubits. Millimeter-wave operation requires superconductors with relatively high Tc, which implies high gap frequency, 2$\Delta$/h, beyond which photons break Cooper pairs. For example, NbTiN with Tc=16K has a gap frequency near 1.4 THz, which is much higher than that of aluminum (90 GHz), allowing for operation throughout the millimeter-wave band. Here we describe a design and simulation of a W-band Kineticon qubit embedded in a 3-D cavity.

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Superconducting qubits are widely used in quantum computing research and industry. We describe a superconducting kinetic inductance qubit (Kineticon) operating at W-band frequencies with a nonlinear nanowire section that provides the anharmonicity required for two distinct quantum energy states. Operating the qubits at higher frequencies relaxes the dilution refrigerator temperature requirements for these devices and paves the path for multiplexing a large number of qubits. Millimeter-wave operation requires superconductors with relatively high Tc, which implies high gap frequency, 2Δ\DeltaΔ/h, beyond which photons break Cooper pairs. For example, NbTiN with Tc=16K has a gap frequency near 1.4 THz, which is much higher than that of aluminum (90 GHz), allowing for operation throughout the millimeter-wave band. Here we describe a design and simulation of a W-band Kineticon qubit embedded in a 3-D cavity.
Superconducting qubits are widely used in quantum computing research and industry. We describe a superconducting kinetic inductance qubit (and introduce the term Kineticon to describe it) operating at W-band frequencies with a nonlinear nanowire section that provides the anharmonicity required for two distinct quantum energy states. Operating the qubits at higher frequencies may relax the dilution refrigerator temperature requirements for these devices and paves the path for multiplexing a large number of qubits. Millimeter-wave operation requires superconductors with relatively high Tc, which implies high gap frequency, 2Δ/h, beyond which photons break Cooper pairs. For example, NbTiN with Tc= 15 K has a gap frequency near 1.4 THz, which is much higher than that of aluminum (90 GHz), allowing for operation throughout the millimeter-wave band. Here we describe a design and simulation of a W-band Kineticon qubit embedded in a 3-D cavity. We perform classical electromagnetic calculations of the resulting field distributions.
Advancing superconducting quantum devices to higher operating frequencies broadens their functionality and enables operation at elevated temperatures, but it also requires near-quantum-limited amplifiers beyond the few-gigahertz regime. Here we present a junction-free, kinetic-inductance parametric amplifier based on thin-film niobium nitride (NbN) operating at 23 GHz in the microwave K-band, achieving a gain up to 40 dB, a 100 MHz gain-bandwidth product, a 1 dB saturation input power of -85 dBm with 23 dB gain, and added noise no greater than 1.4 quanta for phase-preserving amplification. Leveraging the large superconducting gap of NbN, this architecture can be extended to even higher frequencies, supporting applications such as high-fidelity readout of millimeter-wave superconducting qubits and axion searches over an expanded mass window.
Advancing superconducting quantum devices to higher operating frequencies broadens their functionality and enables operation at elevated temperatures, but it also requires near-quantum-limited amplifiers beyond the few-gigahertz regime. Here, we present a junction-free, kinetic-inductance parametric amplifier based on thin-film niobium nitride (NbN) operating at 23 GHz in the microwave K-band, achieving a gain up to 40 dB, a 100 MHz gain–bandwidth product, a 1 dB saturation input power of −85 dBm with 23 dB gain, and added noise not greater than 1.4 quanta for phase-preserving amplification. Leveraging the large superconducting gap of NbN, this architecture can be extended to even higher frequencies, supporting applications such as high-fidelity readout of millimeter-wave superconducting qubits and axion searches over an expanded mass window.
Manipulating the electromagnetic spectrum at the single-photon level is fundamental for quantum experiments. In the visible and infrared ranges, this can be accomplished with atomic quantum emitters, and with superconducting qubits such control is extended to the microwave range (below 10 GHz). Meanwhile, the region between these two energy ranges presents an unexplored opportunity for innovation. We bridge this gap by scaling up a superconducting qubit to the millimeter-wave range (near 100 GHz). Working in this energy range greatly reduces sensitivity to thermal noise compared to microwave devices, enabling operation at significantly higher temperatures, up to 1 K. This has many advantages by removing the dependence on rare 3 He for refrigeration, simplifying cryogenic systems, and providing orders-of-magnitude higher cooling power, lending the flexibility needed for novel quantum sensing and hybrid experiments. Using low-loss niobium trilayer junctions, we realize a qubit at 72 GHz cooled to 0.87 K using only 4 He . We perform Rabi oscillations to establish control over the qubit state, and measure relaxation and dephasing times of 15.8 and 17.4 ns, respectively. This demonstration of a millimeter-wave quantum emitter offers exciting prospects for enhanced sensitivity thresholds in high-frequency photon detection, provides new options for quantum transduction and for scaling up and speeding up quantum computing, enables integration of quantum systems where 3 He refrigeration units are impractical, and, importantly, paves the way for quantum experiments exploring a novel energy range.
We present a detailed simulation and design framework for realizing traveling wave parametric amplifiers (TWPAs) using the nonlinear kinetic inductance of disordered superconductors -- in our case niobium-titanium-nitride (NbTiN). These kinetic inductance TWPAs (KITs) operate via three-wave mixing (3WM) to achieve high broadband gain and near-quantum-limited (nQL) noise. Representative fabricated devices -- realized using an inverted microstrip (IMS), dispersion-engineered, artificial transmission line -- demonstrate power gains above 25 dB, bandwidths beyond 3 GHz, and achieve ultimate system noise levels of 1.1 quanta even when operated with no magnetic shielding. These performance metrics are competitive with state-of-the-art Josephson-junction-based TWPAs but involve simpler fabrication and able to providing three orders of magnitude higher dynamic range (IIP1=−68IIP_1 = -68IIP1​=−68 dBm, IIP3=−55IIP_3 = -55IIP3​=−55 dBm), and high magnetic field resilience -- making KITs an attractive technology for highly multiplexed readout of quantum information and superconducting detector systems.
Millimeter-wave superconducting devices offer a platform for quantum experiments at temperatures above 1 K, and new avenues for studying light-matter interactions in the strong coupling regime. Using the intrinsic nonlinearity associated with kinetic inductance of thin-film materials, we realize four-wave mixing at millimeter-wave frequencies, demonstrating a key component for superconducting quantum systems. We report on the performance of niobium nitride resonators around 100 GHz, patterned on thin (20--50-nm) films grown by atomic layer deposition, with sheet inductances up to 212pH/◻212\phantom{\rule{0.2em}{0ex}}\mathrm{pH}/◻212pH/◻ and critical temperatures up to 13.9 K. For films thicker than 20 nm, we measure quality factors from $1\ifmmode\times\else\texttimes\fi{}{10}^{4}$ to $6\ifmmode\times\else\texttimes\fi{}{10}^{4}$, and explore potential loss mechanisms. Finally, we measure degenerate parametric conversion for a 95-GHz device with a forward efficiency up to +16dB+16\phantom{\rule{0.2em}{0ex}}\mathrm{dB}+16dB, paving the way for the development of nonlinear quantum devices at millimeter-wave frequencies.