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Frontiers in Optics

On-Demand Generation of High-Purity Single-Photon Pulses by NV Centers in Diamond under Electrical Excitation

Igor A. Khramtsov, Dmitry Yu. Fedyanin

Published Jan 1, 2020• 1 citation
Publisher

Abstract

We study for the first time pulsed electrical excitation of NV in diamond and present a strategy to generate strictly one photon per pulse with a probability of 99% at a rate of 100 kHz.
DOI
10.1364/fio.2020.fw4c.7

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Nitrogen-vacancy centers in diamond are considered to be promising building blocks for emerging quantum technologies. At the same time, practical applications require them to be excited and controlled electrically. However, there is a lack of knowledge about their behavior in electrical driven systems. Here, we introduce a physical model to address the single-photon emission dynamics of electrically pumped NV center in diamond in a quantitative manner and present a detailed study of the single-photon emitting diode based on NV centers.
The development of reliable devices to generate single photons is crucial for applications in quantum cryptography, as well as for fundamental quantum optics experiments. Due to their extremely high photostability at room temperature, optically active defects in solids, the so called color centers, are among the most promising candidates. Single NV (nitrogen-vacancy) centers in diamond have been demonstrated to be able to generate single photons and have already shown advantages compared to attenuated laser pulses in a quantum cryptography experiment. The nitrogen-vacancy center (NV center) in diamond consists of a substitutional nitrogen atom and an adjacent vacancy. This complex exhibits an optical transition with a fluorescence lifetime of 11.6 ns. The room temperature spectrum of the NV center consists of the zero-phonon line at 637 nm and broad phononic sidebands with a FWHM of more than 100 nm. Due to the existence of a shelving level the efficiency of the NV center as a single photon source is limited. Additionally, the high diffraction index of bulk diamond restricts the efficiency to collect the fluorescence light.
Optical sources that deliver single photons on demand play a key role in quantum cryptography and optical quantum computations. At present, color centers in wide-bandgap semiconductors, such as the nitrogen-vacancy (NV) and silicon-vacancy (SiV) centers in diamond, are considered to be the most promising candidates for practical quantum information applications owing to their unique emission properties at room temperature. However, for practical reasons, single-photon sources should be pumped electrically, which is required for integrability, scalability, and energy efficiency. However, diamond and related wide-bandgap semiconductor materials are at the interface between insulators and semiconductors, which makes electrical excitation of color centers very challenging. Here, we report on our progress in the understanding of single-photon electroluminescence of color centers in diamond, discuss different factors affecting the brightness of these emitter under electrical excitation, and study how to improve the performance of electrically- pumped single-photon sources based on color centers in diamond.
For quantum information applications, nitrogen-vacancy (NV) centers in diamond combine many of the advantages of atomic systems (optical access, millisecond spin-coherence times) with the engineering flexibility of solid-state devices. Recent demonstrations of coherent coupling between photons and individual NV-center spins [1,2] provide a route to integrating NV-center qubits within photonic networks and for on-demand generation of entangled single-spin/single-photon pairs. Such applications require the ability to tune the NV-center zero-phonon optical transitions, to compensate for natural sample inhomogeneities which perturb the electronic orbital states. Here we demonstrate the ability to electrically control the orbitals of individual NV centers by applying voltages to micron-scale surface gates [3]. Surprisingly, the local electric field experienced by an NV center is significantly enhanced by a photoinduced space charge resulting from photoionization of deep donor impurities within the diamond, even in high-purity single-crystal material (< 5 ppb nitrogen content). Since the photoinduced electric fields are reproducible as a function of gate voltage and are predominantly directed perpendicular to the diamond surface, we can harness them to obtain three-dimensional control of the local electric field vector with surface gates alone. To demonstrate this technique, we tune the excited-state orbital doublet of a strained NV center to degeneracy, as required for some spin-photon entanglement protocols [2], and then adjust the optical transition frequency, showing that we can tune multiple NV centers to have the same degenerate transition energy. This method should enable the coherent coupling of multiple NV center spins to indistinguishable photons within a scalable photonic network.
Single-photon sources (SPS) play a key-role in many applications, spanning from quantum metrology, to quantum information and to the foundations of quantum mechanics. Even if an ideal SPS (i. e. emitting indistinguishable, ”on-demand” single photons, at an arbitrarily fast repetition rate) is far to be realized due to real-world deviations from the ideality, much effort is currently devoted to improving the performance of real sources. With regards to the emission probability, it appears natural to employ sources that are in principle deterministic in the single- photon emission (single quantum emitters such as single atoms, ions, molecules, quantum dots, or color centers in diamond) as opposed to probabilistic ones (usually heralded SPS based on parametric down-conversion). We present an overview of our latest results concerning a work-in-progress NIR pulsed single photon source based on single quantum emitters (color centers in diamond) exploiting recently reported centers. They are particularly interesting because of the narrow emission line (tipically less than 5 nm), the shorter excited state lifetime with respect to NV centres (1 - 2 ns compared to 12 ns, allowing a ten-fold photon emission rate upon saturation) and the polarized emission.