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Frontiers in Optics

How Fast Can NV and SiV Centers in Diamond Be Electrically Triggered?

Igor A. Khramtsov, Dmitry Yu. Fedyanin

Published Jan 1, 2021• 0 citations
Publisher

Abstract

We present a rigorous study of the temporal dynamics of electrically driven single-photon sources based on NV and SiV centers in diamond.
DOI
10.1364/fio.2021.jtu1a.38

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Optical sources that deliver single photons on demand play a key role in quantum cryptography and optical quantum computations. At present, color centers in wide-bandgap semiconductors, such as the nitrogen-vacancy (NV) and silicon-vacancy (SiV) centers in diamond, are considered to be the most promising candidates for practical quantum information applications owing to their unique emission properties at room temperature. However, for practical reasons, single-photon sources should be pumped electrically, which is required for integrability, scalability, and energy efficiency. However, diamond and related wide-bandgap semiconductor materials are at the interface between insulators and semiconductors, which makes electrical excitation of color centers very challenging. Here, we report on our progress in the understanding of single-photon electroluminescence of color centers in diamond, discuss different factors affecting the brightness of these emitter under electrical excitation, and study how to improve the performance of electrically- pumped single-photon sources based on color centers in diamond.
Electrically-driven single-photon sources (SPSs) are required for the scalable quantum technologies. Color centers in diamond emerged as attractive candidates for room-temperature SPSs. SiV centers are especially attractive due to their outstanding emission properties. However, although electroluminescence from SiV centers has been demonstrated, the single-photon electroluminescence (SPEL) from a single center has not been achieved due to the low SPEL rate. Here, we explain why the SPEL rate in recent experiments was low to be resolved and design a diamond p-i-n diode with a SiV center and show how to achieve an SPEL rate of more than 900000 photons/s.