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Entanglement and transport anomalies in nanowires

Published Aug 4, 2013• 1 citation
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IEEE Transactions on Applied Superconductivity•Feb 19, 2016•5 citations
A shallow potential well in a near-perfect quantum wire will bind a single-electron and behave like a quantum dot, giving rise to spin-dependent resonances of propagating electrons due to Coulomb repulsion and Pauli blocking. It is shown how this may be used to generate full entanglement between static and flying spin-qubits near resonance in a two-electron system via singlet or triplet spin-filtering. In a quantum wire with many electrons, the same pairwise scattering may be used to explain conductance, thermopower and shot-noise anomalies, provided the temperature/energy scale is sufficiently high for Kondo-like many-body effects to be negligible.
We investigate numerically the charge, spin, and entanglement dynamics of two electrons confined in a gated semiconductor nanowire. The electrostatic coupling between electrons in the nanowire and the induced charge on the metal electrodes leads to a self-trapping of the electrons, which results in solitonlike properties. We show that the interplay of an all-electrically controlled coherent transport of the electron solitons and of the exchange interaction can be used to realize ultrafast SWAP and entangling SWAP\sqrt{\text{SWAP}}SWAP​ gates for distant spin qubits. We demonstrate that the latter gate can be used to generate a maximally entangled spin state of spatially separated electrons. The results are obtained by quantum-mechanical time-dependent calculations with exact inclusion of electron-electron correlations.
A quantum current standard dual to the Josephson voltage standard has been trumpeted as a primary application for the phenomenon of coherent quantum phase-slips (CQPS) in superconducting nanowires, but it requires a dc transport geometry, distinct from the ring geometry in which CQPS have been probed by microwave spectroscopy measurements. We present measurements on NbN nanowires with a width of 15 nm and including integrated thin-film resistors to provide a high-impedance environment. Analysis shows that the nanowire behavior is in line with expectations. The results demonstrate that the process is promising both for future dc transport CQPS measurements and for the fabrication of other circuits in which low-width superconducting nanowires are required.