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Double-EIT ground-state laser cooling without blue-sideband heating

Evers, J, Keitel, C H

Published Jan 1, 2004• 31 citations
OpenAlex

Abstract

We discuss a laser cooling scheme for trapped atoms or ions which is based on double electromagnetically induced transparency (EIT) and makes use of a four-level atom in tripod configuration. The additional fourth atomic state is coupled by a strong coupling laser field to the usual three-level setup of single-EIT cooling. This effectively allows to create two EIT structures in the absorption spectrum of the system to be cooled, which may be controlled by the coupling laser field parameters to cancel both the carrier- and the blue-sideband excitations. In leading order of the Lamb-Dicke expansion, this suppresses all heating processes. As a consequence, the double-EIT scheme can be used to lower the cooling limit by almost two powers of the Lamb-Dicke parameter as compared to single-EIT cooling.

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Double-EIT ground-state laser cooling without blue-sideband heating

J Evers, C. H Keitel

We discuss a laser cooling scheme for trapped atoms or ions which is based on double electromagnetically induced transparency (EIT) and makes use of a four-level atom in tripod configuration. The additional fourth atomic state is coupled by a strong-coupling laser field to the upper state of the usual three-level setup of single-EIT cooling. This effectively allows to create two EIT structures in the absorption spectrum of the system to be cooled, which may be controlled by the coupling laser field parameters to cancel both the carrier- and the blue-sideband excitations. In leading order of the Lamb-Dicke expansion, this suppresses all heating processes. As a consequence, the double-EIT scheme can be used to lower the cooling limit by a factor of order of the Lamb-Dicke parameter squared as compared to single-EIT cooling.

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We propose a cooling scheme for a trapped atom using the phenomenon of cavity-induced double electromagnetically induced transparency (EIT), where the atom comprising of four levels in tripod configuration is confined inside a high-finesse optical cavity. By exploiting one cavity-induced EIT, which involves one cavity photon and two laser photons, carrier transition can be eliminated due to the quantum destructive interference of excitation paths. Heating process originated from blue-sideband transition mediated by cavity field can also be prohibited due to the destructive quantum interference with the additional transition between the additional ground state and the excited state. As a consequence, the trapped atom can be cooled to the motional ground state in the leading order of the Lamb-Dicke parameters. In addition, the cooling rate is of the same order of magnitude as that obtained in the cavity-induced single EIT scheme.

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Summary form only given. The preparation of quantum systems in pure states is a prerequisite for coherent control. In this context laser cooling of trapped particles to the ground state of the confining potential is a powerful tool for preparing e.g. ions for quantum logic. In particular sideband cooling has been demonstrated to be the most efficient technique, allowing to achieve more than 99% of occupation of the ground state of the trap. This cooling technique relies on two conditions: the Lamb-Dicke regime, and the strong confinement regime. This latter condition, which allows the spectral resolution of individual sidebands of the motion, is however a limitation on the cooling time. We propose a model for cooling single ions inside a trap as an alternative to sideband cooling. The scheme uses electromagnetically induced transparency (EIT) in a /spl Lambda/-level scheme, where one of the transitions is dressed by a strong laser field. For detuning of the dressing laser, the absorption spectrum for the transition shows EIT when the cooling (probe) laser has detuning. Then, by tuning the cooling laser on the dark resonance (or EIT), for a suitable set of parameters and in the Lamb-Dicke regime the atoms are cooled to the ground state by the sideband transitions which are resonantly excited. The scheme achieves efficient ground state cooling and fast cooling rates using a continuous driving, instead of a pulsed one as in Raman sideband cooling schemes. An example is illustrated, where the average vibrational number is plotted as a function of the cooling time, and the final probability of occupation is plotted as a function of the vibrational state. This method may also be applied to reduce phase errors in coherent manipulations of trapped ions for quantum logic.

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Yong Lu, Jian‐Qi Zhang, Jin‐Ming Cui +5 more

We propose a dark-state cooling method of trapped ion systems in the Lamb-Dicke limit. By microwave dressing the ion, we can obtain two electromagnetically induced transparency structures. The heating effects caused by the carrier and the blue sideband transition vanish due to electromagnetically induced transparency effects and the final mean phonon numbers can be much lower than the recoil limit. Our scheme is robust to fluctuations of microwave power and laser intensities, which provides a broad cooling bandwidth to cool motional modes of a linear ion chain. Moreover, it is more suitable to cool four-level ions on a large-scale ion chip.

arXiv:1507.02500•Physical Review A•Aug 21, 2015•11 citations
We discuss a laser cooling scheme for trapped atoms or ions which is based on double electromagnetically induced transparency (EIT) and makes use of a four-level atom in tripod configuration. The additional fourth atomic state is coupled by a strong coupling laser field to the usual three-level setup of single-EIT cooling. This effectively allows to create two EIT structures in the absorption spectrum of the system to be cooled, which may be controlled by the coupling laser field parameters to cancel both the carrier- and the blue-sideband excitations. In leading order of the Lamb-Dicke expansion, this suppresses all heating processes. As a consequence, the double-EIT scheme can be used to lower the cooling limit by almost two powers of the Lamb-Dicke parameter as compared to single-EIT cooling.
We discuss a laser cooling scheme for trapped atoms or ions which is based on double electromagnetically induced transparency (EIT) and makes use of a four-level atom in tripod configuration. The additional fourth atomic state is coupled by a strong-coupling laser field to the upper state of the usual three-level setup of single-EIT cooling. This effectively allows to create two EIT structures in the absorption spectrum of the system to be cooled, which may be controlled by the coupling laser field parameters to cancel both the carrier- and the blue-sideband excitations. In leading order of the Lamb-Dicke expansion, this suppresses all heating processes. As a consequence, the double-EIT scheme can be used to lower the cooling limit by a factor of order of the Lamb-Dicke parameter squared as compared to single-EIT cooling.
We propose a cooling scheme for a trapped atom using the phenomenon of cavity-induced double electromagnetically induced transparency (EIT), where the atom comprising of four levels in tripod configuration is confined inside a high-finesse optical cavity. By exploiting one cavity-induced EIT, which involves one cavity photon and two laser photons, carrier transition can be eliminated due to the quantum destructive interference of excitation paths. Heating process originated from blue-sideband transition mediated by cavity field can also be prohibited due to the destructive quantum interference with the additional transition between the additional ground state and the excited state. As a consequence, the trapped atom can be cooled to the motional ground state in the leading order of the Lamb-Dicke parameters. In addition, the cooling rate is of the same order of magnitude as that obtained in the cavity-induced single EIT scheme.
A detailed study of a robust and fast laser cooling scheme on a three level system is presented. A special laser configuration, applicable to trapped ions, atoms or cantilevers, designs a quantum interference that eliminates the blue sideband in addition to the carrier transition, thus excluding any heating process involving up to one-phonon processes. As a consequence cooling achieves vanishing phonon occupation up to first order in the Lamb-Dicke parameter expansion. Underlying this scheme is a combined action of two cooling schemes which makes the proposal very stable under fluctuations of the physical parameters such as laser intensity or detuning, making it a viable candidate for experimental implementation. Furthermore, it is considerably faster than existing ground state cooling schemes, overcoming one of the limitations of current quantum information processing implementations. Its suitability as a cooling scheme for several ions in a trap or for a cloud of atoms in a dipole trap is shown.
Summary form only given. The preparation of quantum systems in pure states is a prerequisite for coherent control. In this context laser cooling of trapped particles to the ground state of the confining potential is a powerful tool for preparing e.g. ions for quantum logic. In particular sideband cooling has been demonstrated to be the most efficient technique, allowing to achieve more than 99% of occupation of the ground state of the trap. This cooling technique relies on two conditions: the Lamb-Dicke regime, and the strong confinement regime. This latter condition, which allows the spectral resolution of individual sidebands of the motion, is however a limitation on the cooling time. We propose a model for cooling single ions inside a trap as an alternative to sideband cooling. The scheme uses electromagnetically induced transparency (EIT) in a /spl Lambda/-level scheme, where one of the transitions is dressed by a strong laser field. For detuning of the dressing laser, the absorption spectrum for the transition shows EIT when the cooling (probe) laser has detuning. Then, by tuning the cooling laser on the dark resonance (or EIT), for a suitable set of parameters and in the Lamb-Dicke regime the atoms are cooled to the ground state by the sideband transitions which are resonantly excited. The scheme achieves efficient ground state cooling and fast cooling rates using a continuous driving, instead of a pulsed one as in Raman sideband cooling schemes. An example is illustrated, where the average vibrational number is plotted as a function of the cooling time, and the final probability of occupation is plotted as a function of the vibrational state. This method may also be applied to reduce phase errors in coherent manipulations of trapped ions for quantum logic.
We present a detailed analysis of a robust and fast laser cooling scheme [J. Cerrillo et al., Phys. Rev. Lett. 104, 043003 (2010)] on a three-level system. A special laser configuration, applicable to trapped ions, atoms, or cantilevers, designs a double-path quantum interference that eliminates the blue sideband in addition to the carrier transition, thus excluding any heating process involving up to one-phonon interactions. As a consequence, cooling achieves vanishing phonon occupation up to first order in the Lamb-Dicke parameter expansion. Underlying this scheme is a combined action of two cooling schemes which makes the proposal very flexible under constraints of the physical parameters such as laser intensity, detuning, or optical access, making it a viable candidate for experimental implementation. Furthermore, it is considerably faster than existing ground state cooling schemes. Its suitability as a cooling scheme for several ions in a trap and three-dimensional cooling is shown.
We propose a dark-state cooling method of trapped ion systems in the Lamb-Dicke limit. By microwave dressing the ion, we can obtain two electromagnetically induced transparency structures. The heating effects caused by the carrier and the blue sideband transition vanish due to electromagnetically induced transparency effects and the final mean phonon numbers can be much lower than the recoil limit. Our scheme is robust to fluctuations of microwave power and laser intensities, which provides a broad cooling bandwidth to cool motional modes of a linear ion chain. Moreover, it is more suitable to cool four-level ions on a large-scale ion chip.