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ENTANGLEMENT CREATION IN SEMICONDUCTOR QUANTUM DOT CHARGE QUBIT

Fabrizio Buscemi, Paolo Bordone

Published Aug 16, 2016• 0 citations
OpenAlex

Abstract

We study theoretically the appearance of quantum correlations in two- and three-electron scattering in single and double dots. The key role played by transport resonances into entanglement formation between the single-particle states is shown. Both reflected and transmitted components of the scattered particle wavefunction are used to evaluate the quantum correlations between the incident carrier and the bound particle(s) in the dots. Our investigation provides a guideline for the analysis of decoherence effects due to the Coulomb scattering in semiconductor quantum dots structures.

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We study theoretically the appearance of quantum correlations in two- and three-electron scattering in single and double dots. The key role played by transport resonances into entanglement formation between the single-particle states is shown. Both reflected and transmitted components of the scattered particle wavefunction are used to evaluate the quantum correlations between the incident carrier and the bound particle(s) in the dots. Our investigation provides a guideline for the analysis of decoherence effects due to the Coulomb scattering in semiconductor quantum dots structures.
We study theoretically the appearance of quantum correlations in two- and three-electron scattering in single and double dots. The key role played by transport resonances into entanglement formation between the single-particle states is shown. Both reflected and transmitted components of the scattered particle wavefunction are used to evaluate the quantum correlations between the incident carrier and the bound particle(s) in the dots. Our investigation provides a guideline for the analysis of decoherence effects due to the Coulomb scattering in semiconductor quantum dots structures.
We study theoretically the entanglement created in a scattering between an electron, incoming from a source lead, and another electron bound in the ground state of a quantum dot, connected to two leads. We analyze the role played by the different kinds of resonances in the transmission spectra and by the number of scattering channels, into the amount of quantum correlations between the two identical carriers. It is shown that the entanglement between their energy states is not sensitive to the presence of Breit-Wigner resonances, while it presents a peculiar behavior in correspondence to Fano peaks: two close maxima separated by a minimum for a two-channel scattering and a single maximum for a multichannel scattering. Such a behavior is ascribed to the different mechanisms characterizing the two types of resonances. Our results suggest that the production and detection of entanglement in quantum dot structures may be controlled by the manipulation of Fano resonances through external fields.
We show how two qubits encoded in the orbital states of two quantum dots can be entangled or disentangled in a controlled way through their interaction with a weak electron current. The transmission/reflection spectrum of each scattered electron, acting as an entanglement mediator between the dots, shows a signature of the dot–dot entangled state. Strikingly, while a few scattered carriers produce decoherence of the whole two-dot system, a larger number of electrons injected from one lead with proper energy are able to recover its quantum coherence. Our numerical simulations are based on a real-space solution of the three-particle Schrödinger equation with open boundaries. The computed transmission amplitudes are inserted in the analytical expression for the system density matrix to evaluate the entanglement.
Lateral semiconductor quantum dot structures have been proposed as an effective quantum bit (qubit) for quantum computation. A single excess electron with the freedom to move between two capacitively coupled quantum dots creates a `pseudo'-spin system with the same qubit behavior as the more natural two level system of a single electron spin. The excess electron in the double dot system is restricted to one of the two dots, thereby creating two separate and distinct states (usually referred to as |L> and |R>). The benefit of these charge qubits lie in the relative ease with which they can be manipulated and created. Experiments have been performed in this area and have shown controllable coherent oscillations and thus efficient single-qubit operations. However, the decoherence rates observed in the experiments is still quite high, making double dot charge qubits not very appealing for large-scale implementations. The following work describes the effect of the electromagnetic (EM) environment of the double quantum dot system on the decoherence of the charge state. Sources of decoherence in similar systems have been extensively investigated before and this paper follows a close theoretical framework to previous work done in the area. The effect of the EM environment can been seen in the calculations discussed below, although it is clear that the decoherence seen in experiments cannot be fully explained by the voltage fluctuations as they are investigated here. The limitations of the calculations are discussed and improvements are suggested.
We employ the quantum-jump approach to study single scatterings in single semiconductor quantum dots. Two prototypical situations are investigated. First, we analyze two-photon emissions from the cascade biexciton decay of a dot where the single-exciton states exhibit a fine-structure splitting. We show that this splitting results for appropriately chosen polarization filters in an oscillatory behavior of two-photon correlations, and carefully examine the proper theoretical description of the underlying scattering processes. Second, we analyze the decay of a single-electron charged exciton in a quantum dot embedded in a field-effect structure. We show how the quantum properties of the charged exciton are transferred through tunneling and relaxation to the spin entanglement between electrons in the dot and contact, and identify the pertinent disentanglement mechanisms.
We perform the quantitative evaluation of the entanglement dynamics in scattering events between two indistinguishable electrons interacting via the Coulomb potential in one- and two-dimensional semiconductor nanostructures. We apply a criterion based on the von Neumann entropy and the Schmidt decomposition of the global state vector suitable for systems of identical particles. From the time-dependent numerical solution of the two-particle wave function of the scattering carriers we compute their entanglement evolution for different spin configurations: two electrons with the same spin, with different spin, and singlet and triplet spin states. The procedure allows us to evaluate the mechanisms that govern entanglement creation and their connection with the characteristic physical parameters and initial conditions of the system. The cases in which the evolution of entanglement is similar to the one obtained for distinguishable particles are discussed.