The physics of single photons is fascinating, by manipulating them we can observe and probe quantum effects. Doing so requires the fabrication and utilization of single photon sources, of which many types have been developed including quantum dots, trapped atoms and ions, and color centers. On the other end of the experiments, single photon detectors play a role of utmost importance, and while several types of detectors exist, superconducting nanowire single photon detectors are now the state-of-the-art technology. By offering near unity detection efficiency from the ultra-violet to the mid-infrared light spectrum, with negligible noise and excellent time resolution, they made possible many experiments that were previously technologically unfeasible. The same appealing characteristics have found a use in applications outside of the quantum optics framework, with notably light detection and ranging, biomedical imaging or CMOS circuits testing.In this thesis a controlled growth method for tailoring the characteristics of niobium titanium nitride in the framework of superconducting nanowire single photon detectors was developed. Reactive co-sputter deposition of niobium titanium nitride was shown to be a versatile method, both in terms of the degree of control over the material composition, and in the choice of substrates that it allows. Unity internal detection efficiency of detectors at telecom wavelengths was achieved by optimizing the niobium content in the material. The influence of lattice matching on the critical temperatures of films deposited at room temperature was investigated. The fabrication of superconducting nanowire single photon detectors on aluminum nitride-on-sapphire, on lithium niobate nano-waveguides, on gallium arsenide, and the integration on SiN waveguides was achieved. The material was used to fabricate detectors with optimized response for any linear polarization of the incoming photons by using a fractal architecture. Another method was proposed to achieve the same results by encapsulating meandering detectors in a high index dielectric material, resulting in a decrease of the permittivity mismatch between the nanowire material and its surrounding and therefore optimizing the efficiency for both orthogonal linear polarizations.Finally, detectors were fabricated from films developed in this work, and were operated to enable the implementation of polarization-based entanglement distribution in optical fibers in a real-conditions scenario, over a record distance of 96 km. This paves the way for the development of quantum communication networks using existing optical fiber links.
The physics of single photons is fascinating, by manipulating them we can observe and probe quantum effects. Doing so requires the fabrication and utilization of single photon sources, of which many types have been developed including quantum dots, trapped atoms and ions, and color centers. On the other end of the experiments, single photon detectors play a role of utmost importance, and while several types of detectors exist, superconducting nanowire single photon detectors are now the state-of-the-art technology. By offering near unity detection efficiency from the ultra-violet to the mid-infrared light spectrum, with negligible noise and excellent time resolution, they made possible many experiments that were previously technologically unfeasible. The same appealing characteristics have found a use in applications outside of the quantum optics framework, with notably light detection and ranging, biomedical imaging or CMOS circuits testing.In this thesis a controlled growth method for tailoring the characteristics of niobium titanium nitride in the framework of superconducting nanowire single photon detectors was developed. Reactive co-sputter deposition of niobium titanium nitride was shown to be a versatile method, both in terms of the degree of control over the material composition, and in the choice of substrates that it allows. Unity internal detection efficiency of detectors at telecom wavelengths was achieved by optimizing the niobium content in the material. The influence of lattice matching on the critical temperatures of films deposited at room temperature was investigated. The fabrication of superconducting nanowire single photon detectors on aluminum nitride-on-sapphire, on lithium niobate nano-waveguides, on gallium arsenide, and the integration on SiN waveguides was achieved. The material was used to fabricate detectors with optimized response for any linear polarization of the incoming photons by using a fractal architecture. Another method was proposed to achieve the same results by encapsulating meandering detectors in a high index dielectric material, resulting in a decrease of the permittivity mismatch between the nanowire material and its surrounding and therefore optimizing the efficiency for both orthogonal linear polarizations.Finally, detectors were fabricated from films developed in this work, and were operated to enable the implementation of polarization-based entanglement distribution in optical fibers in a real-conditions scenario, over a record distance of 96 km. This paves the way for the development of quantum communication networks using existing optical fiber links.
The Superconducting Nanowire single-photon detector (SNSPD) made with niobium-titanium nitride (NbTiN) thin films fabricated on oxidized silicon substrates are highly promising nanodevices. The SNSPD is an immensely capable infrared single photon detector. When cooled down with liquid helium the device exhibits high detection efficiency, low dark-counts in spite of fast response times, and low timing jitter. For good single-photon sensitivity at telecom wavelengths, picosecod timing resolutions (<100 ps), and high counting frequencies, the SNSPD is first choice compared to the alternatives like indium gallium arsenide avalanche diode detectors, silicon single photon avalanche diode detectors, and other superconducting single photon technology like, transition edge detectors. These SNSPD characteristics make it ideal for long distance quantum key distribution (QKD). \nAlthough the exploitation of the constructive interference that occurs at the SiO2/Si interface can boost detector efficiency, efficient packaging and fiber coupling is often a limiting factor in the overall system quantum efficiency (SQE). In an attempt to maximize SQE, we use a controlled expansion alloy for optimal performance at cryogenic temperatures. This nickel-iron alloy has a high relative permeability and, therefore, attenuates electromagnetic interference. Our report focuses on the theoretical and experimental methods used in the characterization of an un-patterned NbTiN superconducting nanowire. We use simulations based on the gathered experimental data to design an optimal SNSPD meander and calculate its expected SQE. We also use simulations to analyze the speed and value added to secure key rates in long distance QKD schemes up to 400 km with down-conversion sources with positively spectrally correlated and decorrelated photon pairs at 1550 nm wavelength.
Single photon detectors are a vital part of many emerging technologies which harness the quantum properties of light to benefit the fields of communication, computation and sensing. Superconducting nanowire single photon detectors (SNSPDs) offer high detection efficiency, low dark count rates, low timing jitter, and infrared sensitivity that are required by the most demanding single photon counting applications. This thesis presents SNSPDs fabricated and tested at the University of Glasgow that are integrated with optical structures which enable enhanced detection efficiency and integration with waveguide circuit technology. The monolithic integration of waveguide circuit components presents a route towards realisation of an optical quantum information processor that has the stability and scalability to perform the demanding tasks of quantum computation. A novel process is introduced for incorporating superconducting detectors with single mode gallium arsenide waveguides and quantum dot single photon sources. Together these elements would enable the generation of quantum states of light which could be manipulated and detected on a single chip. Detectors are patterned in NbTiN thin superconducting films on to suspended nanobeam waveguides with better than 50 nm alignment accuracy. Low temperature electrical and optical testing confirms the detectors’ single photon sensitivity under direct illumination as well as to waveguide coupled light. Measured detectors were found to have internal registering efficiencies of 6.8 ± 2.4%. Enhancing absorption of photons into thin superconducting films is vital to the creation of high efficiency superconducting single photon detectors. Fabricating an SNSPD on a dielectric mirror creates a partial cavity that can be tailored to enhance detection of light at specific wavelengths. Devices have been fabricated and tested in this thesis with enhanced detection efficiency at infrared and visible wavelengths for quantum cryptography, remote sensing and life science applications. Detectors fabricated in NbTiN on GaAs/AlGaAs Bragg mirrors exhibited a system detection efficiency of 1.5% at 1500 nm wavelength for the best device measured. SNSPDs were also fabricated in NbN on aperiodic dielectric mirrors with a range of different bandwidths. A peak system detection efficiency of 82.7% at 808 nm wavelength was recorded.
Superconducting single-photon detectors (SSPDs) have developed into a mature device technology and excel due outstanding performance metrics, in particular high detection efficiency combined with high time resolution and low dark count rate for a wide wavelength range from the visible to the mid-infrared. In addition to commercially available systems with devices coupled to optical fibers, SSPDs can be integrated with photonic circuits using scalable nanofabrication technologies. Here, we will present recent progress on SSPDs based on NbTiN thin films and their integration on different photonic material platforms. Our process for NbTiN growth at room temperature will be described, using magnetron reactive co-sputtering to achieve high-quality superconducting layers down to thicknesses of few nanometres. Optimized SSPD devices are realized by tuning the superconducting properties of NbTiN thin films, adjusting the material composition and nanocrystalline structure. The realization of different types of detectors and geometries will be shown, including nanofabrication techniques for achieving fully suspended nanowire structures. Furthermore, we will discuss challenges and prospects for scaling-up SSPD device technology as well as detector systems. Multiplexing schemes such as dispersion engineering of superconducting transmission lines will be highlighted as powerful approach to address multiple detectors and reduce the number of required feedthroughs and electrical lines in the cryostat. Eventually, exemplary applications of SSPDs for photon counting in quantum optics and light detection and ranging (LIDAR) will be outlined.
Superconducting nanowire single-photon detectors (SNSPDs) are renowned for their high detection efficiency, low dark count rate, and fast timing resolution, which have emerged as an essential device in quantum technologies, including quantum computing and communication, which also significantly benefits classical applications such as deep-space communication, neuromorphic computing, and light detection and ranging (LiDAR). However, designing and customizing SNSPD into versatile functionalities to satisfy these intensive requirements poses significant challenges, including thin-film deposition, nanofabrication, electrical integration, and light delivery strategies. While prior work has typically optimized individual steps – such as fabrication or characterization – there is a lack of reported systematic, integrated frameworks that span all stages from device design to performance benchmarking. This gap hinders broader adoption of the technology across scientific and industrial communities and limits the rigorous exploration of advanced detection concepts. This thesis aims to establish an end-to-end workflow for the customizable fabrication and comprehensive characterization of superconducting nanowire single-photon detectors, and to demonstrate that such a platform is essential for the investigation of diverse single-photon detection architectures. It begins with the optimization of NbTiN thin-film deposition utilizing an ultrahigh vacuum sputtering system. By systematically identifying and optimizing key deposition parameters, we achieve NbTiN films with targeted superconducting properties along with high uniformity and reproducibility. This fast and reliable workflow establishes a solid foundation for detector fabrication and provides instructions for flexible control over film properties. Furthermore, effective nanofabrication protocols for the high-quality SNSPDs were elaborated, along with the specialized cryogenic packaging techniques for reliable electrical and optical integration. The achieved devices demonstrated performance metrics comparable to commercial systems. The implementation of this full fabrication—characterization cycle also enabled flexible exploration of advanced detector architectures. For example, we investigated superconducting microbridge single-photon detectors (SMSPDs) as a complementary platform, demonstrating a fivefold enhancement in signal-to-noise ratio and a tenfold reduction in recovery time relative to conventional SNSPDs. These results provide quantitative insight into detector design trade-offs. Within this framework, photon-number-resolving (PNR) detection using SNSPDs was further investigated as an essential function for advanced quantum and classical applications. We presented innovative detector architectures—interleaved multi-pixel arrays and multilayer coherent absorption structures—to overcome limitations inherent in conventional multiplexing methods, such as nonuniform detection, temporal degradation, and crosstalk. An interleaved multi-pixel SNSPD array with up to four-photon resolution was achieved with uniform detection, as well as a multilayer architecture based on coherent absorption with uniform and near-unity absorption efficiency. Importantly, a theoretical comparison between these two architectures was conducted to evaluate their absorption efficiency and PNR performance, offering insights into structural optimization and device scalability for advanced PNR detectors. Overall, this thesis establishes a fully in-house SNSPD fabrication and characterization capability, providing a robust foundation for the development, customization, and evaluation of high-performance superconducting single-photon detectors. This platform enables reproducible design optimization, quantitative performance benchmarking, and systematic exploration of detector architectures. By integrating fabrication, characterization, and architectural innovation within a consistent workflow, it facilitates both fundamental investigation and application-driven advancement of single-photon detection technologies in our laboratory and the broader research community in Singapore.
Nanowire superconducting single photon detectors (SSPDs) [1] are characterized by very high sensitivity in the near infrared (detection efficiency η up to 30%, for a dark count rate DK of few Hz), speed (up to ∼1 GHz repetition rate) and time resolution (jitter of 20 ps full width at half maximum, FWHM). They can be operated at temperatures near 4 K, so they can be packaged in cryogenic dipsticks or cryogen-free refrigerators. These features make SSPDs the most promising detectors for telecom-wavelength single-photon counting applications. The basic structure of an SSPD is a narrow (w=50 to 120 nm), thin (th∼4-10 nm) NbN superconducting nanowire folded in a meander pattern. The typical detector active area (i.e. the size of the pixel) is Ad=10 × 10 µm2 (which allows an efficient coupling with the core of optical fibers at telecom wavelengths) with filling factor (f, the ratio of the area occupied by the superconducting meander to the device total area) ranging from 40% to 60%. The meanders are embedded in a 50 Ω coplanar transmission line. At present, the SSPD detection efficiency is limited by its absorbance (α, the ratio of the number of photons absorbed in the nanowire to the number of incident photons on the device active area). Indeed, it has been shown that in the classic front-illumination configuration α cannot exceed 30%. Our approach to increase α consists in integrating SSPDs with advanced optical structures such as distributed Bragg reflectors (DBRs) and optical waveguides. This requires to transfer the challenging SSPD technology (i.e. the deposition of high-quality few-nm thick NbN films and the nano-patterning by electron beam lithography, EBL) from the usual comfortable substrates, i.e. sapphire and MgO, which are known to allow the deposition of few-nm thick NbN films of excellent quality, to an optical substrate like GaAs, on which DBRs and waveguides can be easily obtained. Our first task was then to optimize a process for the deposition of high-quality few-nm thick NbN films on GaAs and AlAs/GaAs-based DBRs. Because of the requirement of compatibility with GaAs, the substrate temperature used for the depositions is 400°C, in order to prevent As evaporation. As GaAs and DBRs are highly mismatched substrates, the deposition parameters were first optimized with respect to the superconducting properties of NbN films on MgO substrates, which allow the growth of high crystal quality NbN films at low temperature. This made easier to separate the influence of stoichiometry from that of microstructure. The optimized deposition parameters were then used to grow NbN films on GaAs and DBRs, under the reasonable assumption (later checked and confirmed) that changing the substrate would not produce a change in film stoichiometry, but only in its microstructure. NbN films ranging from 150nm to 3nm in thickness were then deposited on epitaxial-quality single crystal MgO, GaAs and DBRs structures. The deposition technique is the current controlled DC magnetron sputtering (planar, circular, balanced configuration) of Nb in an Ar + N2 plasma. NbN films deposited on MgO exhibit superconducting critical temperature ΤC=10 Κ, superconducting transition width ΔΤC=0.8 Κ and residual resistivity ratio RRR=R(20K)/R(300K)=0.8 for th=4 nm, which are state of the art values, proof of the excellent quality of our low-temperature deposition process. The quality of films deposited on GaAs and on DBRs is lower than that of NbN deposited on MgO, as for any thickness they systematically exhibit higher ΔΤC and lower ΤC and RRR. However, 5.5 nm-thick NbN films on GaAs still exhibit ΤC=10.7 Κ, ΔΤC=1.1 Κ and RRR=0.7, which compares with 4.5 nm thick films on MgO, making them suitable for device fabrication. To our knowledge, the growth of such high quality thin NbN films on GaAs and DBRs, has never been reported in literature. The degradation of the superconducting properties exhibited by NbN films on GaAs and DBRs was attributed to a highly defected microstructure, due both to a higher lattice misfit between NbN and GaAs and to a poorer quality of the substrate surface. Encouraging preliminary results show that the quality of these films can be improved either cleaning the GaAs/DBR substrate surface more effectively or adding an MgO buffer layer. SSPDs were fabricated on thin NbN films (th=3-7 nm) deposited under optimal conditions on MgO and GaAs by EBL and reactive ion etching. The geometrical parameters of our detectors are: Ad=5×5 µm2, w=60-200 nm, f=40%-60%. The devices were then characterized both electrically and optically. I-V curves of test structures were measured, from which it was possible to deduce important physical parameters used as figures of merit to estimate the superconducting properties of the nanowires, or for the design and the simulation of the devices. The quality of the devices fabricated on GaAs is poorer than those on MgO, most likely due to the lower quality of NbN films deposited on GaAs and to issues related to the EBL nano-patterning step. Measurements of η and of DK as a function of the bias current were performed on SSPDs fabricated on MgO and GaAs. The best performance was exhibited by a w=100 nm, f=40%, th=4 nm meander, showing η=20% and noise equivalent power NEP=10-16 W/Hz1/2 (at λ=1.3 µm and T=4.2 K), which are state of the art values. This result showed for the first time that high performance NbN SSPDs can be realized on a different substrate and from a deposition process at lower temperature than previously reported. High detection efficiencies could not be measured with SSPDs fabricated on GaAs, but it should be noted that at present only first-generation devices (fabricated on GaAs substrates of poor surface quality) have been tested. Better results are expected from devices fabricated on the improved NbN films grown on clean or MgO-buffered GaAs substrates. Although SSPDs on MgO have shown high detection efficiency, the fabrication yield of high performance detectors has to be improved. Variations of the critical current along a nanowire are responsible for the wide distribution in efficiency values of nominally identical SSPDs. In order to understand the physical origin of the nanowire constrictions (i.e. regions of suppressed superconductivity) we performed a spatially-resolved characterization of η of a long straight nanowire, followed by a high resolution SEM (scanning electron microscope) scan on its whole length. Two types of inhomogeneities were evidenced, corresponding to localized efficiency dips and peaks. The peaks likely correspond to constrictions. SEM observations did not evidence any width narrowing at the position of the efficiency peaks, which suggests that constrictions might be due to thickness or quality inhomogeneities of the film occurring during the film deposition or later in the process. On the other hand, the efficiency dips have been correlated with lithography problems discovered on SEM images. Finally, a new photon number resolving detector, the Parallel Nanowire Detector (PND), has been demonstrated, which significantly outperforms existing approaches in terms of sensitivity, speed and multiplication noise in the telecommunication wavelength range. In particular, it provides a repetition rate (80 MHz) three orders of magnitude larger than any existing detector at telecom wavelength, and a sensitivity (NEP=4.2×10-18 W/Hz1/2) one-two orders of magnitude better, with the exception of transition-edge sensors (which require a much lower operating temperature). An electrical equivalent model of the device was developed in order to study its operation. The modeling predicts a physical limit to the reset time of the PND, which is lower than initially estimated. Furthermore, the figures of merit of the device performance in terms of efficiency, speed and sensitivity were defined and their dependency on the design parameters analyzed. Additionally, we developed modeling tools to fully characterize the device and an algorithm to estimate the photon number statistics of an unknown light using the PND. The reconstruction proved to be successful only for low photon fluxes, most likely due to the limited counting capability and the poor calibration of the detector. The PND, with its high repetition rate and high sensitivity, is then suitable for measuring an unknown photon number probability distribution assuming accurate calibration and sufficient counting capability. ______________________________[1] G. N. Gol'tsman, O. Okunev, G. Chulkova, A. Lipatov, A. Semenov, K. Smirnov, B. Voronov, A. Dzardanov, C. Williams, and R. Sobolewski, Appl. Phys. Lett. 79, 705 (2001).
Photonic integrated circuits hold great potential for realizing quantum technology. Efficient single-photon detectors are an essential constituent of any such quantum photonic implementation. In this regard waveguide-integrated superconducting nanowire single-photon detectors are an ideal match for achieving advanced photon counting capabilities in photonic integrated circuits. However, currently considered material systems do not readily satisfy the demands of next generation nanophotonic quantum technology platforms with integrated single-photon detectors, in terms of refractive-index contrast, band gap, optical nonlinearity, thermo-optic stability and fast single-photon counting with high signal-to-noise ratio. Here we show that such comprehensive functionality can be realized by integrating niobium titanium nitride superconducting nanowire single-photon detectors with tantalum pentoxide waveguides. We demonstrate state-of-the-art detector performance in this novel material system, including devices showing 75% on-chip detection efficiency at tens of dark counts per second, detector decay times below 1 ns and sub-30 ps timing accuracy for telecommunication wavelengths photons at 1550 nm. Notably, we realize saturation of the internal detection efficiency over a previously unattained bias current range for waveguide-integrated niobium titanium nitride superconducting nanowire single-photon detectors. Our work enables the full set of high-performance single-photon detection capabilities on the emerging tantalum pentoxide-on-insulator platform for future applications in integrated quantum photonics.