Conference on Lasers and Electro-Optics

1.4 Million Q-Factor 780 nm Wavelength Si3N4 Micro-rings for Chip-Scale Atomic Systems

Martin Sinclair, Kevin Francis Gallacher, Marc Sorel, J. C. Bayley, Euan J. McBrearty, Ross William Millar, S. Hild, Douglas J. Paul

Published Jan 1, 2020• 1 citation

Publisher

Abstract

A silicon nitride micro-ring resonator with loaded Q factor of 1.4 million at 780 nm wavelength on silicon substrates for chip-scale atomic systems targeting the 87Rb atomic transition at 780.24 nm.

DOI: 10.1364/cleo_si.2020.stu4o.8

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Conference on Lasers and Electro-Optics

1.4 Million Q-Factor 780 nm Wavelength Si3N4 Micro-rings for Chip-Scale Atomic Systems

Martin Sinclair, Kevin Francis Gallacher, Marc Sorel, J. C. Bayley, Euan J. McBrearty, Ross William Millar, S. Hild, Douglas J. Paul

Published Jan 1, 2020• 1 citation

Publisher

Abstract

A silicon nitride micro-ring resonator with loaded Q factor of 1.4 million at 780 nm wavelength on silicon substrates for chip-scale atomic systems targeting the 87Rb atomic transition at 780.24 nm.

DOI: 10.1364/cleo_si.2020.stu4o.8

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We demonstrate a silicon nitride integrated FabryPérot cavity achieving quality of

6.1 \times 10^{5}

at 780 nm, bandwidth of 500 nm and high fabrication tolerance. This represents the highest Q-factor and widest bandwidth in visible/near-visible wavelengths, enabling on-chip atom cooling, advancing photonic integrated circuits and quantum optics.