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Design and fabrication of a silicon nitride ring resonator for on-chip broadband entangled photon sources

Zhenghao Yin, Kenta Sugiura, Xiaoyang Cheng, Hideaki Takashima, Ryo Okamoto, Shiyoshi Yokoyama, Shigeki Takeuchi

Published Sep 18, 2019• 0 citations
OpenAlex

Abstract

Quantum entanglement in chip scale has been attracting the recent research interests. With the standard CMOS technology, it is possible to realize entangled photon sources in optical nonlinear micro ring resonators on the platform of silicon[1] or silicon nitride[3]. In order to extend the frequency entanglement range, i.e., to satisfy a broadband phase matching condition, it is essential to take the group velocity dispersion (GVD) into consideration during the four wave mixing process.

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Integrated Optics: Devices, Materials, and Technologies•Jan 26, 2023•1 citation
Quantum entanglement in chip scale has been attracting the recent research interests. With the standard CMOS technology, it is possible to realize entangled photon sources in optical nonlinear micro ring resonators on the platform of silicon[1] or silicon nitride[3]. In order to extend the frequency entanglement range, i.e., to satisfy a broadband phase matching condition, it is essential to take the group velocity dispersion (GVD) into consideration during the four wave mixing process.
Correlated photon-pair sources are key components for quantum computing, networking, and sensing applications. Integrated photonics has enabled chip-scale sources using nonlinear processes, producing high-rate entanglement with sub-100 microwatt power at telecom wavelengths. Many quantum systems operate in the visible or near-infrared ranges, necessitating broadband visible-telecom entangled-pair sources for connecting remote systems via entanglement swapping and teleportation. This study evaluates broadband entanglement generation through spontaneous four-wave mixing in various nonlinear integrated photonic materials, including silicon nitride, lithium niobate, aluminum gallium arsenide, indium gallium phosphide, and gallium nitride. We demonstrate how geometric dispersion engineering facilitates phase-matching for each platform and reveals unexpected results, such as robust designs to fabrication variations and a Type-1 cross-polarized phase-matching condition for III-V materials that expands the operational bandwidth. With experimentally attainable parameters, integrated photonic microresonators with optimized designs can achieve pair generation rates greater than ~1 THz/mW2^22.
Frequency entangled photon sources are in high demand in a variety of optical quantum technologies, including quantum key distribution, cluster state quantum computation and quantum metrology. In the recent decade, chip-scale entangled photon sources have been developed using silicon platforms, offering robustness, large scalability and CMOS technology compatibility. Here, we report the generation of frequency correlated photon pairs using a 150-GHz silicon nitride ring cavity. First, the device is characterized for studying the phase matching condition during spontaneous four-wave mixing. Next, we evaluate the joint spectrum intensity of the generated photons and confirm the photon pair generation in a total of 42 correlated frequency mode pairs, corresponding to a bandwidth of 51.25 nm. Finally, the experimental results are analyzed and the joint spectral intensity is quantified in terms of the phase matching condition.
Chip-scale integrated photonic circuits provide an attractive platform for the implementation of many quantum photonic technologies ranging from precise metrology to secure communication and quantum computation. In particular, silicon photonic platforms support micron-scale nonlinear optical sources of non-classical light which can be mass manufactured using the robust fabrication processes pioneered by the CMOS microelectronics industry. Integration of these quantum photonic sources with high-performance classical photonic devices on the same chip is required for truly scalable quantum information technologies. Integrated nonlinear resonators are investigated as sources of quantum mechanically correlated photon pair sources. An all-order dispersion engineering method is presented as a robust design synthesis for micoring sources. In addition, a novel concept of coupled mode dispersion compensation is proposed and demonstrated, providing significantly improved performance characteristics of resonant four-wave mixing sources. Next a photon pair source is demonstrated in a commercial CMOS microelectronics process opening the door to future integration of quantum photonics with electronic logic and control circuits. Classical nonlinear optical measurements of stimulated four-wave mixing are used for the first time to accurately predict the quantum correlations from the same device operating in the photon pair regime. Next the first demonstration of fully on-chip pump rejection is demonstrated with over 95 dB pump extinction improving the figures of merit from previous demonstrations by multiple orders of magnitude, including losses, detected pair rates and size. Finally, proposals for introducing novel degrees of freedom provided by an integrated platform are presented for further improving the performance of both photon pair and classical nonlinear optical sources.
Frequency entangled photons have potential for various quantum applications. Recently, on-chip photon-pair sources made by CMOS compatible processes have attracted attention. In this paper, we report broadband generation of photon-pairs via a spontaneous four-wave mixing process using a CMOS compatible ring resonator. We performed frequency-correlation between the signal and idler photons by frequency-resolved coincidence detection and confirmed that the signal and idler photons are correlated over 59 frequency modes, a bandwidth of 23.6 nm, which are the largest numbers achieved to date. Furthermore, we reproduced the experimentally observed joint spectral intensity from the obtained transmission spectrum of the resonator involving the information of the dispersion of the device.
CMOS-compatible photonic chips are highly desirable for real-world quantum optics devices due to their scalability, robustness, and integration with electronics. Despite impressive advances using Silicon nanostructures, challenges remain in reducing their linear and nonlinear losses and in creating narrowband photons necessary for interfacing with quantum memories. Here we demonstrate the potential of the silicon nitride (Si3N4) platform by realizing an ultracompact, bright, entangled photon-pair source with selectable photon bandwidths down to 30 MHz, which is unprecedented for an integrated source. Leveraging Si3N4's moderate thermal expansion, simple temperature control of the chip enables precise wavelength stabilization and tunability without active control. Single-mode photon pairs at 1550 nm are generated at rates exceeding 107 s-1 with mW's of pump power and are used to produce time-bin entanglement. Moreover, Si3N4 allows for operation from the visible to the mid-IR, which make it highly promising for a wide range of integrated quantum photonics applications.
In recent years, there has been a spurring research interest growing on photonics integrated circuits as the way to scale up quantum communications. In particular, building a reliable integrated source of entangled photons is one of the main challenges remaining for commercial exploitation in quantum sensing and metrology. Therefore, advances in design of integrated sources of entangled photons is a necessary and crucial task to be performed for miniaturization and cost-effectiveness. Microring resonators are one of the most promising candidates to generate entangled photons via nonlinear interactions, especially Spontaneous Four-Wave Mixing (SFWM). But fabrication limitations in reproducibility of high-quality resonators mandate the use of active devices. Here we present the results of preparing the excitation pulse with different spectral, intensity and dispersion parameters to optimize the quantum efficiency in passive devices after fabrication. Different numerical methods such as Finite Difference Time Domain (FDTD) and Split-Step Fourier Method (SSFM) are used to reproduce the nonlinear propagation, interplay with dispersion and losses. Exploiting the degree of freedom of the excitation pulse can bring more energy efficient and passive devices as quantum entangled pair sources in an integrated chip. Considerations on different degrees of entanglement are also discussed for applications in quantum sensing and quantum metrology.