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Technical Physics Letters

Formation of Multilayered Nanostructures of NV Sites in Single-Crystal CVD Diamond

А. М. Горбачев, Mikhail Aleksandrovich Lobaev, D. B. Radishchev, Anatoly Leontievich Vikharev, Sergey Aleksandrovich Bogdanov, Stepan V. Bolshedvorskii, Anton I. Zeleneev, Vladimir V. Soshenko, Alexey V. Akimov, М. Н. Дроздов, Vladimir Aleksandrovich Isaev

Published Jul 1, 2020• 1 citation
Publisher

Abstract

Abstract The results of growing multilayered nitrogen-doped nanostructures that have the form of periodically arranged nanometer-thick nitrogen-containing layers in a single-crystal CVD diamond are presented. The possibility of creating nitrogen-doped diamond layers with extremely sharp boundaries (less than 1 nm) is demonstrated. The photoluminescence study have shown that multilayered structures make it possible to obtain a higher radiation intensity of practically important NV – sites at a spin coherence time close to that for uniformly doped layers with the same concentration of nitrogen.

DOI
10.1134/s1063785020070093

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arXiv:2111.07981•New Journal of Physics•Feb 25, 2022•78 citations
Abstract The results of growing multilayered nitrogen-doped nanostructures that have the form of periodically arranged nanometer-thick nitrogen-containing layers in a single-crystal CVD diamond are presented. The possibility of creating nitrogen-doped diamond layers with extremely sharp boundaries (less than 1 nm) is demonstrated. The photoluminescence study have shown that multilayered structures make it possible to obtain a higher radiation intensity of practically important NV – sites at a spin coherence time close to that for uniformly doped layers with the same concentration of nitrogen.
Results of synthesis of multilayered nitrogen doped nanostructures, which consist of periodically located nitrogen-containing layers in monocrystalline CVD diamond, are presented. The possibility of creation of nitrogen doped layers with extremely abrupt interfaces, less than 1 nm, is demonstrated. Photoluminescence studies have shown that multilayered structures allow obtaining higher emission intensity of practically important NV– centers with spin coherence times close to homogeneously doped layers at the same nitrogen concentration.
Here, we report the fabrication and characterization of single crystal diamond films on a two-inch wafer-scale containing three-dimensional layered structures of negatively charged nitrogen-vacancy color centers (NV−^{-}−). The (100)-oriented layered diamond films were grown by chemical vapor deposition (CVD) to create spatially separated regions of enhanced emission associated with NV−^{-}− centers. Such localized emission enhancement as well as 2D and 3D arrays of spins could enable close-packed architectures for emerging quantum devices, such as data processors, memory cells, and magnetic sensors. A cyclic sequence of CVD growth and oxygen-plasma etching is employed, resulting in the in-situ formation of layered inverted pyramidal structures with flat $\{111111111\}$ sidewalls. These pits are subsequently overgrown by nitrogen-doped diamond to achieve NV−^{-}−-rich facets with a uniform N-V bond arrangement and improved nitrogen incorporation efficiency.
The nitrogen incorporation, diamond growth rate and fluorescence of as‐grown NV centers is studied at different CVD diamond growth conditions. Also, the influence of the misorientation angle is investigated. Heavily nitrogen doped layers are grown at different gas pressures and methane contents, with the maximum nitrogen concentration in the doped layer reaching 7 × 1019 cm−3. The ratio of NV center concentration to the total nitrogen content was determined. The studies are aimed to determine the conditions for creating ensembles with a high concentration of NV centers localized in diamond with nanometer accuracy.
Abstract Confocal photoluminescence (PL) microscopy was used to study a distribution of negatively charged nitrogen-vacancy (NV − ) defects within a surface and in a cross section of a homoepitaxial chemical vapor deposition (CVD) diamond layer intentionally grown with a nitrogen concentration close to the solubility limit. A variation in the PL intensity within the whole sample was found to exceed no more than 30% of the intensity maximum. The diamond layers with densely packed NV − arrays are a promising material platform for the design of highly sensitive magnetic field and temperature sensors, as well as for using this material in quantum optics and informatics technologies based on NV − spins.
We present the increase in the nitrogen vacancy center concentration in nitrogen delta-doped layers by almost one order of magnitude. To achieve this, we employ a low-pressure, high-temperature annealing step at 1750 °C in vacuum. We demonstrate an enhancement of the photoluminescence intensity of NV centers compared to annealing steps at lower temperatures of 1200 °C. To achieve this, we fabricate nitrogen-doped thin films with a thickness of 50 nm via chemical vapor deposition. We show that the nitrogen is mainly incorporated in a 6 nm thin film at the layer interface. We link the strong enhancement of the NV concentration to a possible decomposition of NVH centers and the mobility of various species at elevated temperatures, including vacancies and nitrogen in these two-dimensional structures. Additionally, after the high temperature annealing, we observe a Hahn-echo spin coherence time of 7.9 μ s, which is in line with literature data on achievable coherence time in highly nitrogen-doped layers. Our results could pave the way for the precise fabrication of improved diamond elements, e.g., used in magnetic field sensors and offer an alternative route to implantation techniques.
Abstract The nitrogen-vacancy (NV) center in diamond is a promising quantum system for magnetometry applications exhibiting optical readout of minute energy shifts in its spin sub-levels. Key material requirements for NV ensembles are a high NV − concentration, a long spin coherence time and a stable charge state. However, these are interdependent and can be difficult to optimize during diamond growth and subsequent NV creation. In this work, we systematically investigate the NV center formation and properties in bulk chemical vapor deposition (CVD) diamond. The nitrogen flow during growth is varied by over four orders of magnitude, resulting in a broad range of single substitutional nitrogen concentrations of 0.2–20 parts per million. For a fixed nitrogen concentration, we optimize electron-irradiation fluences with two different accelerated electron energies, and we study defect formation via optical characterizations. We discuss a general approach to determine the optimal irradiation conditions, for which an enhanced NV concentration and an optimum of NV charge states can both be satisfied. We achieve spin–spin coherence times T 2 ranging from 45.5 to 549 μ s for CVD diamonds containing 168 to 1 parts per billion NV − centers, respectively. This study shows a pathway to engineer properties of NV-doped CVD diamonds for improved sensitivity.