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Письма в журнал технической физики

Формирование многослойных наноструктур NV-центров в монокристаллическом CVD-алмазе

А.М. Горбачев, М.А. Лобаев, D. B. Radishchev, А.Л. Вихарев, С.А. Богданов, Stepan V. Bolshedvorskii, Anton I. Zeleneev, В.В. Сошенко, А.В. Акимов, М. Н. Дроздов, В.А. Исаев

Published Jan 1, 2020• 0 citations
Publisher

Abstract

Results of synthesis of multilayered nitrogen doped nanostructures, which consist of periodically located nitrogen-containing layers in monocrystalline CVD diamond, are presented. The possibility of creation of nitrogen doped layers with extremely abrupt interfaces, less than 1 nm, is demonstrated. Photoluminescence studies have shown that multilayered structures allow obtaining higher emission intensity of practically important NV– centers with spin coherence times close to homogeneously doped layers at the same nitrogen concentration.

DOI
10.21883/pjtf.2020.13.49585.18299

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Abstract The nitrogen-vacancy (NV) center in diamond is a promising quantum system for magnetometry applications exhibiting optical readout of minute energy shifts in its spin sub-levels. Key material requirements for NV ensembles are a high NV − concentration, a long spin coherence time and a stable charge state. However, these are interdependent and can be difficult to optimize during diamond growth and subsequent NV creation. In this work, we systematically investigate the NV center formation and properties in bulk chemical vapor deposition (CVD) diamond. The nitrogen flow during growth is varied by over four orders of magnitude, resulting in a broad range of single substitutional nitrogen concentrations of 0.2–20 parts per million. For a fixed nitrogen concentration, we optimize electron-irradiation fluences with two different accelerated electron energies, and we study defect formation via optical characterizations. We discuss a general approach to determine the optimal irradiation conditions, for which an enhanced NV concentration and an optimum of NV charge states can both be satisfied. We achieve spin–spin coherence times T 2 ranging from 45.5 to 549 μ s for CVD diamonds containing 168 to 1 parts per billion NV − centers, respectively. This study shows a pathway to engineer properties of NV-doped CVD diamonds for improved sensitivity.
Nitrogen-vacancy (NV) centers in single-crystal CVD diamond are promising candidates for quantum sensing due to their remarkable optical and spin properties [1]. These defects exhibit stable photoluminescence (PL), long spin coherence times, and high sensitivity to external fields [2]. In this study, we present a room-temperature PL characterization of NV centers excited with a 532 nm laser. The setup was optimized for high signal-to-noise ratio and spectral resolution. Key parameters analyzed include emission intensity, zero-phonon line (ZPL) at ~637 nm, phonon sidebands, and the charge state distribution between NV⁰ and NV⁻. The NV⁻ state, crucial for spin-based sensing, is evaluated to understand its stability under different nitrogen doping conditions [3]. The relative intensities of NV⁰ and NV⁻ provide insights into nitrogen incorporation and vacancy formation. These results contribute to optimizing synthesis conditions for enhanced NV⁻ concentration, supporting the advancement of diamond-based quantum sensing technologies.
Abstract Confocal photoluminescence (PL) microscopy was used to study a distribution of negatively charged nitrogen-vacancy (NV − ) defects within a surface and in a cross section of a homoepitaxial chemical vapor deposition (CVD) diamond layer intentionally grown with a nitrogen concentration close to the solubility limit. A variation in the PL intensity within the whole sample was found to exceed no more than 30% of the intensity maximum. The diamond layers with densely packed NV − arrays are a promising material platform for the design of highly sensitive magnetic field and temperature sensors, as well as for using this material in quantum optics and informatics technologies based on NV − spins.
Abstract A nitrogen vacancy (NV) center in diamond is a promising platform for the study of quantum sensing and quantum many-body physics. It is essential for such study to realize a system in which NV centers interact with one another. This requires the fabrication of highly concentrated NV centers, as the centers must exist within a few nanometers of one another. Only a few such samples have been fabricated, because the required irradiation of several-MV electron beams over long periods makes such sample preparation difficult. Here, highly concentrated NV ensembles ([NV] = 8.5 × 1018 cm-3) were created by narrowing the electron beam of a transmission electron microscope to generate large amounts of vacancies in highly concentrated nitrogen-doped CVD diamond ([N] = 8 × 1020 cm-3). This result reduces the difficulty of producing high-concentration NV ensembles and is expected to promote the development of many-body quantum physics.