In this research, analytical study for simulating a Fabry-Perot bistable etalon (F-P cavity) filled with a dispersive optimized nonlinear optical material (Kerr type) such as semiconductors Indium Antimonide (InSb). An optimization procedure using reflective (~85%) InSb etalon (~50µm) thick is described. For this etalon with a (50 µm) spot diameter beam, the minimum switching power is (~0.078 mW) and switching time is (~150 ns), leading to a switching energy of (~11.77 pJ) for this device. Also, the main role played by the temperature to change the etalon characteristic from nonlinear to linear dynamics.
In this research, analytical study for simulating a Fabry-Perot bistable etalon (F-P cavity) filled with a dispersive optimized nonlinear optical material (Kerr type) such as semiconductors Indium Antimonide (InSb). An optimization procedure using reflective (~85%) InSb etalon (~50µm) thick is described. For this etalon with a (50 µm) spot diameter beam, the minimum switching power is (~0.078 mW) and switching time is (~150 ns), leading to a switching energy of (~11.77 pJ) for this device. Also, the main role played by the temperature to change the etalon characteristic from nonlinear to linear dynamics.
In this work, analytical study for simulating a Fabry-Perot bistable etalon (F-P cavity) filled with a dispersive optimized nonlinear optical material (Kerr type) such as semiconductors Indium Antimonide (InSb). Because of a trade off between the etalon finesse values and driving terms, an optimization procedures have been done on the InSb etalon/CO laser parameters, using critical switching irradiance (Ic) via simulation systems of optimization procedures of optical cavity. in order to achieve the minimum switching power and faster switching time, the optimization parameters of the finesse values and driving terms on optical bistability and switching dynamics must be studied. In addition, for different values of a cavity finesse (for example, F = 25 and 2.37) the switching intensity takes low values with a high finesse etalon compared to a high switching intensity with a low finesse etalon. So, the minimum switching power for a low finesse etalon is ⁓0.785mW, and is about 0.0785mW for a high finesse etalon. The driving term peak of a high finesse etalon becomes higher and the slowing down region becomes less, leading to a fast switching as compared with a slow switching in a low finesse etalon. So that, the minimum switching time was about 300ns for a low finesse etalon, and about 150ns for a high finesse etalon.
In this work, the external switching dynamics of a Fabry-Perot etalon are studied via optical bistability system simulation. The simulated set-up of this investigation consists of two laser beams; the first beam is continuous (CW) which is considered as a biasing beam and capable of holding the bistable system for a certain range, which we are interested in, from a point that is very close self-switching to a point where the switching is unachievable. The second beam is modulated by passing the first beam through an acousto-optic modulator (AOM) to produce pulses with a minimum rise time and is used as an external source (coherent switching). In this work, we obtained the optical bistable loops by applying absorption coefficient (α) = 20cm-1, e sample etalon thickness (D) = 110μm, forward mirror reflectivity (Rf) = 0.6, and backward mirror reflectivity (Rb) = 0.95. The steady state characteristic of an initial detuning of the cavity (φ0) = 0.8 was studied at the conditions of no external input pulse intensity (M(t) = 0) and switching that takes place at Is(ON)= 0.57mW and Is(OFF) = 0.4mW.
This dissertation presents the results of experimental research on the nonlinear refraction in InSb and the experimental demonstration of two nonlinear etalon devices using InSb as the active material. The first portion of the dissertation considers the Dynamic Burstein-Moss Shift model for nonlinearities in narrow-gap semiconductors. The physics and the equations are reviewed, and limitations in describing intensity dependent refraction in a semiconductor are considered. These limitations arise from the nonlinear dependence of charge carrier density upon irradiance. The second portion of the dissertation presents experimental measurements made on the nonlinear refraction of InSb at temperatures between 80 K and 182 K, for wavelengths from 5.75 μm to 6.10 μm, where the photon energy lay in the band tail below 100 cm⁻¹. Measurements of the linear absorption were first made with an infrared spectrometer for temperatures from 80 K to 300 K. The nonlinearity was measured by analyzing the transmission through InSb etalons. Nonlinear transmission curves were digitized and stored with an IBM PC-XT, then a curve fit was performed using the nonlinear refractive index as a fiting parameter. Observations are reported of increasing absorption, due in part to a thermal shift of the absorption edge. The second portion of the work presents the theory and demonstration of a bistable etalon using an edge-injected control beam. Plane-wave nonlinear etalon theory is used to describe the operation of such a device, illustrating the way in which switching and logic gate operation can be obtained. Two devices based on this concept are demonstrated: the 3-port device using a single control beam, and the 2SON gate using two control beams to perform two-input logic operation. The extension of the 2SON gate to an array of pixels, and some considerations for optimizing array performance, are considered. Two appendices follow the body of the dissertation, the first describing the preparation of the InSb etalon samples, and the second detailing several procedures for maintenance and operation of the CO laser used.
The analytical study of optical bistability is concerned in a fullyoptimized laser Fabry-Perot system. The related phenomena ofswitching dynamics and optimization procedure are also included.From the steady state of optical bistability equation can plot theincident intensity versus the round trip phase shift (φ) for differentvalues of dark mistuning 12,6,3,1.50 , o or finesse (F= 1, 5, 20,100). In order to obtain different optical bistable loops. The inputoutputcharacteristic for a nonlinear Fabry-Perot etalon of a differentvalues of finesse (F) and using different initial detuning (φ0) are usedin this research. When the cavity finesse values increase, the switch-ON intensity increases for the same value of (φ0), because thebistable loop width increases with increasing the cavity finessevalues.
In this work, the switching nonlinear dynamics of a Fabry-Perot etalon are studied. The method used to complete the solution of the differential equations for the nonlinear medium. The Debye relaxation equations solved numerically to predict the behavior of the cavity for modulated input power. The response of the cavity filled with materials of different response time is depicted. For a material with a response time equal to = 50 ns, the cavity switches after about (100 ns). Notice that there is always a finite time delay before the cavity switches. The switch up time is much longer than the cavity build-up time of the corresponding linear cavity which was found to be of the order of a few round-trip times. The slowing down of the cavity response occurs when the incident intensity is approximately equal to the critical switching intensity. This effect is called critical slowing down. As a result, the response of the cavity is much slower than what could be expected from the steady state analysis. The reflected intensity and the change in round-trip phase have similar dynamic response. In this research, the matlap programs are used to study the switching dynamics of a Fabry-Perot etalon.
The non-linear wave-equation has been solved numerically for a Fabry-Perot etalon, assuming a cylindrical symmetric gaussian input beam, a local mixed dispersive and absorptive saturable nonlinearity and an additional nonsaturable background absorption term. The role of focusing has been systematically investigated for both absorptive and dispersive bistability. Whole-beam switching occurs under tight focusing conditions. But, in the case of defocusing and absorptive bistability, a further reduction of spotsize results in loss of the hysteresis characteristics. Thus, thisposes a restriction on the minimum spotsize and, hence on the minimum input power, for bistable operation.