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Bulletin of the American Physical Society

Hybrid sensing approaches for quantum spin sensors

Michael E. Flatté

Published Mar 4, 2020• 0 citations
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In quantum sensing, precision is typically limited by the maximum time interval over which phase can be accumulated. Memories have been used to enhance this time interval beyond the coherence lifetime and thus gain precision. Here, we demonstrate that by using a quantum memory an increased sensitivity can also be achieved. To this end, we use entanglement in a hybrid spin system comprising a sensing and a memory qubit associated with a single nitrogen-vacancy centre in diamond. With the memory we retain the full quantum state even after coherence decay of the sensor, which enables coherent interaction with distinct weakly coupled nuclear spin qubits. We benchmark the performance of our hybrid quantum system against use of the sensing qubit alone by gradually increasing the entanglement of sensor and memory. We further apply this quantum sensor-memory pair for high-resolution NMR spectroscopy of single (13)C nuclear spins.
Quantum coherence serves as a crucial quantum resource for achieving high-sensitivity quantum sensing. Because of its long coherence time at room temperature, the nitrogen-vacancy (NV) center has emerged as a quantum sensor in various fields in recent years. While nanoscale quantum sensing at room temperature has been demonstrated for NV centers, noise on the diamond surface severely limits its further development at a higher sensitivity. Here, we utilize the hybridization between graphene and diamond surfaces to directly deplete surface unpaired electron spins, thereby achieving roughly two-fold enhancement in coherence. Through the combination of electron spin resonance spectra and first-principle calculations, we explain that this phenomenon arises from a significant reduction in electron spin density on the diamond surface due to interface electron orbital hybridization. Our research presents a new approach for solid-state quantum sensors to reach the desired sensitivity level and offers a new pathway for future studies on material interfaces.