A generalized antiferromagnetic approach to the Mott transition is analyzed with special emphasis on electron doped cuprates, where evidence for electronic phase separation is weak or absent. Fluctuations are incorporated via a self-consistent renormalization, thereby deriving a `nearly-antiferromagnetic Fermi liquid' susceptibility. The calculation is sensitive to hot-spot effects. Near optimal doping, an approximately electron-hole symmetrical Mott gap collapse is found (quantum critical points). The calculation satisfies the Mermin-Wagner theorem (Neel transition at T=0 only -- unless interlayer coupling effects are included), and the mean-field gap and transition temperature are replaced by pseudogap and onset temperature. The resulting susceptibility is used to calculate the doping dependence of the photoemission dispersion, in excellent agreement with experiment. Discussions of interlayer coupling, doping dependence of $U$ , and extension to a three-band model are included.A generalized antiferromagnetic approach to the Mott transition is analyzed with special emphasis on electron doped cuprates, where evidence for electronic phase separation is weak or absent. Fluctuations are incorporated via a self-consistent renormalization, thereby deriving a `nearly-antiferromagnetic Fermi liquid' susceptibility. The calculation is sensitive to hot-spot effects. Near optimal doping, an approximately electron-hole symmetrical Mott gap collapse is found (quantum critical points). The calculation satisfies the Mermin-Wagner theorem (Neel transition at T=0 only -- unless interlayer coupling effects are included), and the mean-field gap and transition temperature are replaced by pseudogap and onset temperature. The resulting susceptibility is used to calculate the doping dependence of the photoemission dispersion, in excellent agreement with experiment. Discussions of interlayer coupling, doping dependence of $U$, and extension to a three-band model are included.

arXiv:cond-mat/0308469Aug 23, 20030 citations

Spectral function in hole- and electron-doped high-Tc cuprates

Takami Tohyama

Journal of Physics and Chemistry of SolidsNov 17, 20050 citations

A Microscopic Approach to the Mott—Hubbard Gap

C.-H. Pao, N. E. Bickers

Springer proceedings in physicsJan 1, 20030 citations

Pseudogap formation due to charge-transfer transition and Kondo effect

Shigeru Koikegami

Abstract We investigate the doping evolution of the electronic state of the three-band t-J-U model considering the normal state of the hole-doped high- T c superconducting cuprate. In our model, when some number of holes are doped into the undoped state, the d electron exhibits the charge-transfer (CT)-type Mott-Hubbard transition along with a chemical potential jump. A reduced CT gap is formed from the p band and the coherent component of the d band, and it shrinks due to charge fluctuations as more holes are doped as in the pseudogap (PG) phenomenon. This trend is reinforced as the d-p band hybridization is increased, and a Fermi liquid state is retrieved as in the Kondo effect. These suggest that the PG in the hole-doped cuprate emerges due to the CT transition and the Kondo effect.Abstract We investigate the doping evolution of the electronic state of the three-band t-J-U model considering the normal state of the hole-doped high- T c superconducting cuprate. In our model, when some number of holes are doped into the undoped state, the d electron exhibits the charge-transfer (CT)-type Mott-Hubbard transition along with a chemical potential jump. A reduced CT gap is formed from the p band and the coherent component of the d band, and it shrinks due to charge fluctuations as more holes are doped as in the pseudogap (PG) phenomenon. This trend is reinforced as the d-p band hybridization is increased, and a Fermi liquid state is retrieved as in the Kondo effect. These suggest that the PG in the hole-doped cuprate emerges due to the CT transition and the Kondo effect.

Journal of Physics Condensed MatterFeb 27, 20234 citations

DMRG simulations of a 3 band Hubbard model for the cuprates

Steven White, Douglas J. Scalapino

Bulletin of the American Physical SocietyMar 3, 20150 citations

Emergence of quasiparticles in a doped Mott insulator

Yao Wang, Yu He, Krzysztof Wohlfeld +9 more

Abstract How a Mott insulator develops into a weakly coupled metal upon doping is a central question to understanding various emergent correlated phenomena. To analyze this evolution and its connection to the high-Tc cuprates, we study the single-particle spectrum for the doped Hubbard model using cluster perturbation theory on superclusters. Starting from extremely low doping, we identify a heavily renormalized quasiparticle dispersion that immediately develops across the Fermi level, and a weakening polaronic side band at higher binding energy. The quasiparticle spectral weight roughly grows at twice the rate of doping in the low doping regime, but this rate is halved at optimal doping. In the heavily doped regime, we find both strong electron-hole asymmetry and a persistent presence of Mott spectral features. Finally, we discuss the applicability of the single-band Hubbard model to describe the evolution of nodal spectra measured by angle-resolved photoemission spectroscopy (ARPES) on the single-layer cuprate La2−xSrxCuO4 (0 ≤ x ≤ 0.15). This work benchmarks the predictive power of the Hubbard model for electronic properties of high-Tc cuprates.Abstract How a Mott insulator develops into a weakly coupled metal upon doping is a central question to understanding various emergent correlated phenomena. To analyze this evolution and its connection to the high-Tc cuprates, we study the single-particle spectrum for the doped Hubbard model using cluster perturbation theory on superclusters. Starting from extremely low doping, we identify a heavily renormalized quasiparticle dispersion that immediately develops across the Fermi level, and a weakening polaronic side band at higher binding energy. The quasiparticle spectral weight roughly grows at twice the rate of doping in the low doping regime, but this rate is halved at optimal doping. In the heavily doped regime, we find both strong electron-hole asymmetry and a persistent presence of Mott spectral features. Finally, we discuss the applicability of the single-band Hubbard model to describe the evolution of nodal spectra measured by angle-resolved photoemission spectroscopy (ARPES) on the single-layer cuprate La2−xSrxCuO4 (0 ≤ x ≤ 0.15). This work benchmarks the predictive power of the Hubbard model for electronic properties of high-Tc cuprates.

arXiv:1909.09288Communications PhysicsNov 13, 202017 citations

U

, and extension to a three-band model are included.