Motivated by the recent atomic-scale scanning tunneling microscope (STM) observation for a spatially localized in-gap state in an electron doped Mott insulator, we evaluate the local electronic state of the Hubbard model on the square lattice using the cluster perturbation theory. An in-gap state is found to exist below the upper Hubbard band around the dopant lattice site, which is consistent with the STM measurements. The emergence of this local in-gap state is accompanied with a rapid reduction of the double occupancy of electrons. A similar in-gap state is also found to exist on the triangular lattice. These results suggest that the in-gap state is an inherent feature of Mott insulators independent of the lattice structure.
Motivated by recent experiments on Mott insulators, in both iridates and ultracold atoms, we theoretically study the effects of magnetic order on the Mott-Hubbard excitons. In particular, we focus on spin-mediated doublon-holon pairing in Hubbard materials. We use several complementary theoretical techniques: Mean-field theory to describe the spin degrees of freedom, the self-consistent Born approximation to characterize individual charge excitations across the Hubbard gap, and the Bethe-Salpeter equation to identify bound states of doublons and holons. The binding energy of the Mott exciton is found to increase with increasing the N\'eel order parameter, whereas the exciton mass decreases. We observe that these trends rely significantly on the retardation of the effective interaction, and require consideration of multiple effects from changing the magnetic order. Our results are consistent with the key qualitative trends observed in recent experiments on iridates. Moreover, the findings could have direct implications on ultracold atom Mott insulators where the Hubbard model is the exact description of the system and the microscopic degrees of freedom can be directly accessed.
We theoretically analyze the process of charge recombination in the planar Mott-Hubbard insulators with the aim to explain the short picosecond-range lifetimes of photoexcited carriers, experimentally studied via pump-probe experiments on the undoped cuprates. The recombination mechanism consists of two essential ingredients: the formation of a metastable
s-type bound holon-doublon pair, i.e., the Mott exciton, and the decay of such an excitonic state via the multimagnon emission. In spite of the large gap that requires many bosons to be emitted, the latter process is fast due to a large exchange scale and strong charge-spin coupling in planar systems. As the starting microscopic model we consider the single-band Hubbard model and then a more realistic three-band model for cuprates, both leading to the same minimal one. The decay rate of the exciton is evaluated numerically via the Fermi golden rule, having consistency also with the direct time-evolution calculation. The decay rate reveals exponential dependence on the ratio of the Mott-Hubbard gap and the exchange coupling, the result qualitatively reproduced also within a toy exciton-boson model.